公开(公告)号：US07749869B2

公开(公告)日：2010-07-06

申请号：US12186243

申请日：2008-08-05

申请人： Joel P. De Souza ,  Harold John Hovel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Ghavam G. Shahidi

发明人： Joel P. De Souza ,  Harold John Hovel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC分类号： H01L21/322 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3225 ,  H01L21/02032

摘要： A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl.

摘要翻译： 描述了一种用于改善其中具有金属污染物的含硅晶片的少数寿命的方法，其包括在1200℃或更高温度下退火并提供氧气，惰性气体和含氯气体如HCl的气态环境。

公开(公告)号：US20100035409A1

公开(公告)日：2010-02-11

申请号：US12186243

申请日：2008-08-05

申请人： Joel P De Souza ,  Harold John Hovel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Ghavam G. Shahidi

发明人： Joel P De Souza ,  Harold John Hovel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC分类号： H01L21/322

CPC分类号： H01L21/3225 ,  H01L21/02032

摘要： A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl.

摘要翻译： 描述了一种用于改善其中具有金属污染物的含硅晶片的少数寿命的方法，其包括在1200℃或更高温度下退火并提供氧气，惰性气体和含氯气体如HCl的气态环境。

公开(公告)号：US20100221867A1

公开(公告)日：2010-09-02

申请号：US12436249

申请日：2009-05-06

申请人： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ghavam G. Shahidi

发明人： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Ghavam G. Shahidi

IPC分类号： H01L31/0376 ,  H01L21/762

CPC分类号： H01L31/03921 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02667 ,  H01L21/7624 ,  H01L21/76245 ,  H01L21/76262 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.

摘要翻译： 提供了一种用于制造SOI衬底的损耗成本方法。 该方法包括通过利用蒸发沉积工艺在衬底的半导体区域上形成一层p型掺杂的非晶态含Si层。 然后进行固相重结晶步骤，以将叠层内的非晶态含硅层转化为p型掺杂单晶含Si层的堆叠。 重结晶后，对单晶含Si层进行阳极氧化和至少氧化步骤以形成SOI衬底。 太阳能电池和/或其他半导体器件可以形成在本发明的SOI衬底的上表面上。

公开(公告)号：US10396229B2

公开(公告)日：2019-08-27

申请号：US13103583

申请日：2011-05-09

申请人： Joel P. De Souza ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

发明人： Joel P. De Souza ,  Harold J. Hovel ,  Daniel A. Inns ,  Jeehwan Kim ,  Christian Lavoie ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Zhen Zhang

IPC分类号： H01L31/07 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068

摘要： A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

公开(公告)号：US07914619B2

公开(公告)日：2011-03-29

申请号：US12263889

申请日：2008-11-03

申请人： Joel P. de Souza ,  Keith E. Fogel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Joel P. de Souza ,  Keith E. Fogel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： C30B29/06

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/56 ,  C30B1/02

摘要： The invention provides a high temperature (about 1150° C. or greater) annealing process for converting thick polycrystalline Si layers on the order of 1 μm to 40 μm on a single crystal seed layer into thick single crystal Si layers having the orientation of the seed layer, thus allowing production of thick Si films having the quality of single crystal silicon at high rates and low cost of processing. Methods of integrating such high temperature processing into solar cell fabrication are described, with particular attention to process flows in which the seed layer is disposed on a porous silicon release layer. Another aspect pertains to the use of similar high temperature anneals for poly-Si grain growth and grain boundary passivation. A further aspect relates to structures in which these thick single crystal Si films and passivated poly-Si films are incorporated.

摘要翻译： 本发明提供一种高温（约1150℃或更高）的退火工艺，用于将单晶种子层上的1μm至40μm量级的多晶硅层转化成具有种子取向的厚单晶Si层 从而允许以高速率生产具有单晶硅质量的厚Si薄膜，并且处理成本低。 描述了将这种高温处理集成到太阳能电池制造中的方法，特别注意种子层设置在多孔硅释放层上的工艺流程。 另一方面涉及对于多晶硅晶粒生长和晶界钝化使用类似的高温退火。 另一方面涉及其中结合有这些厚单晶Si膜和钝化多晶硅膜的结构。

公开(公告)号：US20100112792A1

公开(公告)日：2010-05-06

申请号：US12263889

申请日：2008-11-03

申请人： Joel P. de Souza ,  Keith E. Fogel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Joel P. de Souza ,  Keith E. Fogel ,  Daniel A. Inns ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L21/205

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/56 ,  C30B1/02

摘要： The invention provides a high temperature (about 1150° C. or greater) annealing process for converting thick polycrystalline Si layers on the order of 1 μm to 40 μm on a single crystal seed layer into thick single crystal Si layers having the orientation of the seed layer, thus allowing production of thick Si films having the quality of single crystal silicon at high rates and low cost of processing. Methods of integrating such high temperature processing into solar cell fabrication are described, with particular attention to process flows in which the seed layer is disposed on a porous silicon release layer. Another aspect pertains to the use of similar high temperature anneals for poly-Si grain growth and grain boundary passivation. A further aspect relates to structures in which these thick single crystal Si films and passivated poly-Si films are incorporated.

摘要翻译： 本发明提供一种高温（约1150℃或更高）的退火工艺，用于将单晶种子层上的1μm至40μm量级的多晶硅层转化成具有种子取向的厚单晶Si层 从而允许以高速率生产具有单晶硅质量的厚Si薄膜，并且处理成本低。 描述了将这种高温处理集成到太阳能电池制造中的方法，特别注意种子层设置在多孔硅释放层上的工艺流程。 另一方面涉及对于多晶硅晶粒生长和晶界钝化使用类似的高温退火。 另一方面涉及其中结合有这些厚单晶Si膜和钝化多晶硅膜的结构。

公开(公告)号：US20120031476A1

公开(公告)日：2012-02-09

申请号：US12849966

申请日：2010-08-04

申请人： Stephen W. Bedell ,  Harold J. Hovel ,  Daniel A. Inns ,  Jee H. Kim ,  Alexander Reznicek ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Harold J. Hovel ,  Daniel A. Inns ,  Jee H. Kim ,  Alexander Reznicek ,  Devendra K. Sadana

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/03765 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/548

摘要： A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.

摘要翻译： 光伏器件包括组成调制的半导体结构，其包括p掺杂的第一半导体材料层，第一本征成分梯度半导体材料层，本征半导体材料层，第二本征组分梯度半导体层和n掺杂的第一半导体层 半导体材料层。 第一和第二本征成分梯度半导体材料层包括具有较大带隙宽度的第一半导体材料和具有较小带隙的第二半导体材料的合金，并且第二半导体材料的浓度朝向本征半导体 第一和第二组成梯度半导体材料层中的材料层。 光电器件提供与第一半导体材料相当的开路电压，以及与第二半导体材料相当的短路电流，从而提高光伏器件的效率。

公开(公告)号：US08298923B2

公开(公告)日：2012-10-30

申请号：US12912940

申请日：2010-10-27

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

公开(公告)号：US20120104390A1

公开(公告)日：2012-05-03

申请号：US12912940

申请日：2010-10-27

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

公开(公告)号：US08933456B2

公开(公告)日：2015-01-13

申请号：US13616322

申请日：2012-09-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC分类号： H01L29/38 ,  H01L21/02 ,  H01L21/762

CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。