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    Germanium-containing release layer for transfer of a silicon layer to a substrate
    2.
    发明授权
    Germanium-containing release layer for transfer of a silicon layer to a substrate 有权
    含锗释放层，用于将硅层转移到基底

    公开(公告)号：US08298923B2

    公开(公告)日：2012-10-30

    申请号：US12912940

    申请日：2010-10-27

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

    Germanium-Containing Release Layer For Transfer of a Silicon Layer to a Substrate
    3.
    发明申请
    Germanium-Containing Release Layer For Transfer of a Silicon Layer to a Substrate 有权
    含锗的释放层用于将硅层转移到基板

    公开(公告)号：US20120104390A1

    公开(公告)日：2012-05-03

    申请号：US12912940

    申请日：2010-10-27

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L29/04 ,  H01L21/20

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

    Germanium-containing release layer for transfer of a silicon layer to a substrate
    4.
    发明授权
    Germanium-containing release layer for transfer of a silicon layer to a substrate 有权
    含锗释放层，用于将硅层转移到基底

    公开(公告)号：US08933456B2

    公开(公告)日：2015-01-13

    申请号：US13616322

    申请日：2012-09-14

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Devendra K. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L29/38 ,  H01L21/02 ,  H01L21/762

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。

    Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
    5.
    发明授权
    Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal 失效
    通过整体高温SIMOX-Ge相互扩散退火形成绝缘体上硅锗（SGOI）

    公开(公告)号：US07084050B2

    公开(公告)日：2006-08-01

    申请号：US11039602

    申请日：2005-01-19

    申请人： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    发明人： Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    IPC分类号： H01L21/20 ,  H01L21/76 ,  H01L21/31

    CPC分类号： H01L21/76243 ,  H01L21/26506 ,  H01L21/76267 ,  Y10T428/12674 ,  Y10T428/12681

    摘要： A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implanted-ion rich region in the Si-containing substrate. The implanted-ion rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.

    摘要翻译： 提供了使用SIMOX和Ge相互扩散形成基本上松弛的，优质的绝缘体上硅衬底材料的方法。 该方法包括首先将离子注入到含Si衬底中以在含Si衬底中形成植入离子富集区。 注入离子富集区具有足够的离子浓度，使得在随后的高温退火期间形成耐Ge扩散的阻挡层。 接下来，在含Si衬底的表面上形成Ge含有层，然后在允许形成阻挡层和Ge的相互扩散的温度下进行加热步骤，从而形成基本上松弛的单晶SiGe层 阻挡层顶部。

    Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator
    6.
    发明授权
    Strained semiconductor-on-insulator by addition and removal of atoms in a semiconductor-on-insulator 有权
    通过在绝缘体上半导体中加入和除去原子的绝缘体上的应变半导体

    公开(公告)号：US08361889B2

    公开(公告)日：2013-01-29

    申请号：US12830626

    申请日：2010-07-06

    申请人： Thomas N. Adam ,  Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    发明人： Thomas N. Adam ,  Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    IPC分类号： H01L21/20

    CPC分类号： H01L29/1054 ,  H01L29/7833

    摘要： A method of forming a strained semiconductor-on-insulator (SSOI) substrate that does not include wafer bonding is provided. In this disclosure a relaxed and doped silicon layer is formed on an upper surface of a silicon-on-insulator (SOI) substrate. In one embodiment, the dopant within the relaxed and doped silicon layer has an atomic size that is smaller than the atomic size of silicon and, as such, the in-plane lattice parameter of the relaxed and doped silicon layer is smaller than the in-plane lattice parameter of the underlying SOI layer. In another embodiment, the dopant within the relaxed and doped silicon layer has an atomic size that is larger than the atomic size of silicon and, as such, the in-plane lattice parameter of the relaxed and doped silicon layer is larger than the in-plane lattice parameter of the underlying SOI layer. After forming the relaxed and doped silicon layer on the SOI substrate, the dopant within the relaxed and doped silicon layer is removed from that layer converting the relaxed and doped silicon layer into a strained (compressively or tensilely) silicon layer that is formed on an upper surface of an SOI substrate.

    摘要翻译： 提供了一种形成不包括晶片接合的应变绝缘体上半导体（SSOI）衬底的方法。 在本公开中，在绝缘体上硅（SOI）衬底的上表面上形成松弛和掺杂的硅层。 在一个实施例中，松弛和掺杂硅层内的掺杂剂具有小于硅的原子尺寸的原子尺寸，因此松弛和掺杂硅层的面内晶格参数小于硅的原子尺寸， 下层SOI层的平面晶格参数。 在另一实施例中，松弛和掺杂硅层内的掺杂剂具有大于硅的原子尺寸的原子尺寸，因此松弛和掺杂硅层的面内晶格参数大于硅原子尺寸， 下层SOI层的平面晶格参数。 在SOI衬底上形成松弛和掺杂的硅层之后，从该层去除松弛和掺杂硅层内的掺杂剂，将松散和掺杂的硅层转化成形成在上层的应变（压缩或拉伸）硅层 SOI衬底的表面。

    STRAINED SEMICONDUCTOR-ON-INSULATOR BY ADDITION AND REMOVAL OF ATOMS IN A SEMICONDUCTOR-ON-INSULATOR
    7.
    发明申请
    STRAINED SEMICONDUCTOR-ON-INSULATOR BY ADDITION AND REMOVAL OF ATOMS IN A SEMICONDUCTOR-ON-INSULATOR 有权
    通过在半导体绝缘体中添加和去除原子的应变半导体绝缘体

    公开(公告)号：US20120009766A1

    公开(公告)日：2012-01-12

    申请号：US12830626

    申请日：2010-07-06

    申请人： Thomas N. Adam ,  Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    发明人： Thomas N. Adam ,  Stephen W. Bedell ,  Joel P. de Souza ,  Keith E. Fogel ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi

    IPC分类号： H01L21/20

    CPC分类号： H01L29/1054 ,  H01L29/7833

    摘要： A method of forming a strained semiconductor-on-insulator (SSOI) substrate that does not include wafer bonding is provided. In this disclosure a relaxed and doped silicon layer is formed on an upper surface of a silicon-on-insulator (SOI) substrate. In one embodiment, the dopant within the relaxed and doped silicon layer has an atomic size that is smaller than the atomic size of silicon and, as such, the in-plane lattice parameter of the relaxed and doped silicon layer is smaller than the in-plane lattice parameter of the underlying SOI layer. In another embodiment, the dopant within the relaxed and doped silicon layer has an atomic size that is larger than the atomic size of silicon and, as such, the in-plane lattice parameter of the relaxed and doped silicon layer is larger than the in-plane lattice parameter of the underlying SOI layer. After forming the relaxed and doped silicon layer on the SOI substrate, the dopant within the relaxed and doped silicon layer is removed from that layer converting the relaxed and doped silicon layer into a strained (compressively or tensilely) silicon layer that is formed on an upper surface of an SOI substrate.

    摘要翻译： 提供了一种形成不包括晶片接合的应变绝缘体上半导体（SSOI）衬底的方法。 在本公开中，在绝缘体上硅（SOI）衬底的上表面上形成松弛和掺杂的硅层。 在一个实施例中，松弛和掺杂硅层内的掺杂剂具有小于硅的原子尺寸的原子尺寸，因此松弛和掺杂硅层的面内晶格参数小于硅的原子尺寸， 下层SOI层的平面晶格参数。 在另一实施例中，松弛和掺杂硅层内的掺杂剂具有大于硅的原子尺寸的原子尺寸，因此松弛和掺杂硅层的面内晶格参数大于硅原子尺寸， 下层SOI层的平面晶格参数。 在SOI衬底上形成松弛和掺杂的硅层之后，从该层去除松弛和掺杂硅层内的掺杂剂，将松散和掺杂的硅层转化成形成在上层的应变（压缩或拉伸）硅层 SOI衬底的表面。

    GERMANIUM-CONTAINING RELEASE LAYER FOR TRANSFER OF A SILICON LAYER TO A SUBSTRATE
    9.
    发明申请
    GERMANIUM-CONTAINING RELEASE LAYER FOR TRANSFER OF A SILICON LAYER TO A SUBSTRATE 有权
    用于将硅层转移到基板的含锗包装层

    公开(公告)号：US20130015455A1

    公开(公告)日：2013-01-17

    申请号：US13616322

    申请日：2012-09-14

    申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Davendra k. Sadana ,  Katherine L. Saenger

    发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Daniel A. Inns ,  Jeehwan Kim ,  Davendra k. Sadana ,  Katherine L. Saenger

    IPC分类号： H01L29/38

    CPC分类号： H01L21/0262 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02664 ,  H01L21/76254

    摘要： A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed.

    摘要翻译： 含锗层沉积在单一晶体体硅衬底上，包括足以以原子浓度掺入1％-50％的氧的氧分压水平。 含锗层的厚度优选被限制以保持与底层硅衬底的一定程度的外延对准。 任选地，可以在含锗层上生长或替代含锗层。 随后将至少部分结晶的硅层沉积在含锗层上。 手柄基板结合到至少部分结晶的硅层。 本体硅衬底，含锗层，至少部分结晶的硅层和处理衬底的组件在含锗层内被切割以提供复合衬底，该复合衬底包括处理衬底和至少部分结晶的硅 层。 去除复合衬底上任何剩余的含锗层。