公开(公告)号：US07101948B2

公开(公告)日：2006-09-05

申请号：US10602279

申请日：2003-06-23

申请人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney ,  Robert George Syvret

发明人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney ,  Robert George Syvret

IPC分类号： C07F7/21

CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C08K5/13 ,  C09D4/00 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31608 ,  C08G77/04

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括提供有效量的自由基清除剂聚合抑制剂 到这种环四硅氧烷; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和自由基清除剂聚合抑制剂。

公开(公告)号：US07300995B2

公开(公告)日：2007-11-27

申请号：US11484094

申请日：2006-07-11

申请人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney ,  Robert George Syvret

发明人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney ,  Robert George Syvret

IPC分类号： C07F7/21

CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C08K5/13 ,  C09D4/00 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31608 ,  C08G77/04

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括提供有效量的自由基清除剂聚合抑制剂 到这种环四硅氧烷; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和自由基清除剂聚合抑制剂。

公开(公告)号：US06858697B2

公开(公告)日：2005-02-22

申请号：US10029892

申请日：2001-12-21

申请人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney

发明人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney

IPC分类号： C07F7/20 ,  C07F7/21 ,  C09D4/00 ,  C23C16/40 ,  C23C16/42 ,  H01L21/316

CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C09D4/00 ,  H01L21/31608 ,  C08G77/04

摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.

摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于在用于电子材料制造中的氧化硅的化学气相沉积方法中使用的聚合，包括提供有效量的中性至弱酸性聚合 这种环四硅氧烷的抑制剂; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和中性至弱酸性聚合抑制剂。 自由基清除剂也可以包含在该过程和组合物中。

公开(公告)号：US20100041243A1

公开(公告)日：2010-02-18

申请号：US12190125

申请日：2008-08-12

申请人： Hansong Cheng ,  Manchao Xiao ,  Gauri Sankar Lal ,  Thomas Richard Gaffney ,  Chenggang Zhou ,  Jinping Wu

发明人： Hansong Cheng ,  Manchao Xiao ,  Gauri Sankar Lal ,  Thomas Richard Gaffney ,  Chenggang Zhou ,  Jinping Wu

IPC分类号： H01L21/314 ,  C07F7/02

CPC分类号： C23C16/345 ,  C07F7/025

摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n   (I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

摘要翻译： 本文描述了用于沉积含硅膜的氨基硅烷前体，以及用于从这些氨基硅烷前体沉积含硅膜的方法。 在一个实施方案中，提供了用于沉积含硅膜的氨基硅烷前体，其包含下式（I）：（R 1 R 2 N）n SiR 34-n（I），其中取代基R 1和R 2各自独立地选自包含1至 20个碳原子和包含6至30个碳原子的芳基，取代基R 1和R 2中的至少一个包含至少一个选自F，Cl，Br，I，CN，NO 2，PO（OR）2的吸电子取代基， OR，SO，SO 2，SO 2 R，并且其中至少一个吸电子取代基中的R选自烷基或芳基，R 3选自H，烷基或芳基，n是数 从1到4。

公开(公告)号：US20080145535A1

公开(公告)日：2008-06-19

申请号：US11949868

申请日：2007-12-04

申请人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

发明人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

IPC分类号： C23C16/06

CPC分类号： C23C16/34 ,  C23C16/45553

摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02(R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，与含有一个或多个Si-H 3 N 3片段的含硅源接触 加热的底物与吸附的金属酰胺反应，其中含硅源具有一个或多个H 3 Si-NR O 2 O 2， （R 0〜S 3 H 3，R 1，R 1或R 2）定义如下）选自 由下式中的一个或多个组成：其中式中的R和R 1表示通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有R和R 1的环烷基 式A中也可以组合成环状基团，R 2表示单键，（CH 2 CH 2）n， 环或SiH 2 H 2，并且清除未反应的含硅源。

公开(公告)号：US20070275166A1

公开(公告)日：2007-11-29

申请号：US11439554

申请日：2006-05-23

申请人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

发明人： Hareesh Thridandam ,  Manchao Xiao ,  Xinjian Lei ,  Thomas Richard Gaffney

IPC分类号： C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3145 ,  H01L21/31633

摘要： The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The organoaminosilanes are represented by the formulas: The use of diisopropylaminosilane is the preferred precursor for the formation of the silicon oxide film.

摘要翻译： 本发明涉及通过CVD在衬底上沉积氧化硅层的方法。 在氧化剂存在下，烷基具有至少两个碳原子的有机氨基硅烷前体的反应允许形成氧化硅膜。 有机基氨基硅烷由下式表示：使用二异丙基氨基硅烷是形成氧化硅膜的优选前体。

公开(公告)号：US20090137100A1

公开(公告)日：2009-05-28

申请号：US12272886

申请日：2008-11-18

申请人： Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

发明人： Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

IPC分类号： H01L21/20

CPC分类号： C23C16/45531 ,  C23C16/305 ,  C23C16/45527 ,  C23C16/45553

摘要： The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

摘要翻译： 本发明是使用选自原子层沉积和化学气相沉积的方法制造锗 - 锑 - 碲合金膜的方法，其中甲硅烷基碲前驱物被用作合金膜的碲源，并且是 在沉积过程中与醇反应。

公开(公告)号：US08129555B2

公开(公告)日：2012-03-06

申请号：US12190125

申请日：2008-08-12

申请人： Hansong Cheng ,  Manchao Xiao ,  Gauri Sankar Lal ,  Thomas Richard Gaffney ,  Chenggang Zhou ,  Jinping Wu

发明人： Hansong Cheng ,  Manchao Xiao ,  Gauri Sankar Lal ,  Thomas Richard Gaffney ,  Chenggang Zhou ,  Jinping Wu

IPC分类号： C07F7/10 ,  H01L21/31

CPC分类号： C23C16/345 ,  C07F7/025

摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n  (I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

摘要翻译： 本文描述了用于沉积含硅膜的氨基硅烷前体，以及用于从这些氨基硅烷前体沉积含硅膜的方法。 在一个实施方案中，提供了用于沉积含硅膜的氨基硅烷前体，其包含下式（I）：（R 1 R 2 N）n SiR 34-n（I），其中取代基R 1和R 2各自独立地选自包含1至 20个碳原子和包含6至30个碳原子的芳基，取代基R 1和R 2中的至少一个包含至少一个选自F，Cl，Br，I，CN，NO 2，PO（OR）2的吸电子取代基， OR，SO，SO 2，SO 2 R，并且其中至少一个吸电子取代基中的R选自烷基或芳基，R 3选自H，烷基或芳基，n是数 从1到4。

公开(公告)号：US07960205B2

公开(公告)日：2011-06-14

申请号：US12272886

申请日：2008-11-18

申请人： Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

发明人： Manchao Xiao ,  Liu Yang ,  Thomas Richard Gaffney

IPC分类号： H01L21/00

CPC分类号： C23C16/45531 ,  C23C16/305 ,  C23C16/45527 ,  C23C16/45553

摘要： The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

摘要翻译： 本发明是使用选自原子层沉积和化学气相沉积的方法制造锗 - 锑 - 碲合金膜的方法，其中甲硅烷基碲前驱物被用作合金膜的碲源，并且是 在沉积过程中与醇反应。

公开(公告)号：US07678422B2

公开(公告)日：2010-03-16

申请号：US11949868

申请日：2007-12-04

申请人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

发明人： Xinjian Lei ,  Hareesh Thridandam ,  Manchao Xiao ,  Heather Regina Bowen ,  Thomas Richard Gaffney

IPC分类号： C23C16/18 ,  C23C16/30

CPC分类号： C23C16/34 ,  C23C16/45553

摘要： A process to deposit metal silicon nitride on a substrate comprising: sorbing a metal amide on a heated substrate, purging away the unsorbed metal amide, contacting a silicon-containing source having one or more Si—H3 fragments with the heated substrate to react with the sorbed metal amide, wherein the silicon-containing source has one or more H3Si—NR02 (R0═SiH3, R, R1 or R2, defined below) groups selected from the group consisting of one or more of: wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., branched alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2, and purging away the unreacted silicon-containing source.

摘要翻译： 一种在衬底上沉积金属氮化硅的方法，包括：在加热的衬底上吸附金属酰胺，清除未吸附的金属酰胺，将具有一个或多个Si-H 3片段的含硅源与被加热的衬底接触，与 吸附的金属酰胺，其中所述含硅源具有一个或多个选自下列中的一个或多个的一个或多个的R 3 Si-NRO 2（R 0 = SiH 3，R 1，R 2或R 2，定义如下）：其中式中的R和R 1 代表通常具有2至约10个碳原子的脂族基团，例如支链烷基，具有式R中R和R 1的环烷基也可结合成环状基团，并且R 2表示单键，（CH 2）n，环或 SiH2，并且清除未反应的含硅源。