公开(公告)号：US06755954B2

公开(公告)日：2004-06-29

申请号：US10116077

申请日：2002-04-04

申请人： Steven T. Mayer ,  Timothy Patrick Cleary ,  Michael John Janicki ,  Edmund B. Minshall ,  Thomas A. Ponnuswamy

发明人： Steven T. Mayer ,  Timothy Patrick Cleary ,  Michael John Janicki ,  Edmund B. Minshall ,  Thomas A. Ponnuswamy

IPC分类号： C25D500

CPC分类号： C25D17/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  C25D17/12 ,  Y10S204/07

摘要： An apparatus for electrochemical treatment of a substrate, in particular for electroplating an integrated circuit wafer. An apparatus preferably includes dynamically operable concentric anodes and dielectric shields in an electrochemical bath. Preferably, the bath height of an electrochemical bath, the substrate height, and the shape and positions of an insert shield and a diffuser shield are dynamically variable during electrochemical treatment operations. Step include varying anode current, bath height and substrate height, shield shape, and shield position.

摘要翻译： 一种用于电化学处理衬底的装置，特别是用于电镀集成电路晶片。 设备优选地包括在电化学浴中的动态可操作的同心阳极和介电屏蔽。 优选地，在电化学处理操作期间，电化学浴的浴高度，基底高度以及插入物屏蔽件和扩散器护罩的形状和位置是动态可变的。 步骤包括改变阳极电流，浴槽高度和衬底高度，屏蔽形状和屏蔽位置。

公开(公告)号：US07605082B1

公开(公告)日：2009-10-20

申请号：US11251353

申请日：2005-10-13

申请人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC分类号： H01L21/44

CPC分类号： H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

摘要翻译： 在半导体器件中的导电线上形成覆盖层的方法的特征在于以下操作：（a）提供包括介电层的半导体衬底，所述电介质层具有（i）设置在其中的暴露的导电线（例如铜线）和（ ii）设置在其上的暴露的阻挡层; 和（b）在所述半导体衬底的至少暴露的导电线上沉积覆盖层材料。 在某些实施例中，该方法还可以包括移除设置在阻挡层和导电线上的导电层（例如，覆盖层）的至少一部分以暴露阻挡层。

公开(公告)号：US08043958B1

公开(公告)日：2011-10-25

申请号：US12875857

申请日：2010-09-03

申请人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC分类号： H01L21/302 ,  H01L21/461 ,  B24B7/00

CPC分类号： H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

摘要翻译： 在半导体器件中的导电线上形成覆盖层的方法的特征在于以下操作：（a）提供包括介电层的半导体衬底，所述电介质层具有（i）设置在其中的暴露的导电线（例如铜线）和（ ii）设置在其上的暴露的阻挡层; 和（b）在所述半导体衬底的至少暴露的导电线上沉积覆盖层材料。 在某些实施例中，该方法还可以包括移除设置在阻挡层和导电线上的导电层（例如，覆盖层）的至少一部分以暴露阻挡层。

公开(公告)号：US07811925B1

公开(公告)日：2010-10-12

申请号：US12184145

申请日：2008-07-31

申请人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC分类号： H01L21/302 ,  H01L21/461 ,  B24B7/00

CPC分类号： H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

摘要翻译： 在半导体器件中的导电线上形成覆盖层的方法的特征在于以下操作：（a）提供包括介电层的半导体衬底，所述电介质层具有（i）设置在其中的暴露的导电线（例如铜线）和（ ii）设置在其上的暴露的阻挡层; 和（b）在所述半导体衬底的至少暴露的导电线上沉积覆盖层材料。 在某些实施例中，该方法还可以包括移除设置在阻挡层和导电线上的导电层（例如，覆盖层）的至少一部分以暴露阻挡层。

公开(公告)号：US07690324B1

公开(公告)日：2010-04-06

申请号：US11200338

申请日：2005-08-09

申请人： Jingbin Feng ,  Steven T. Mayer ,  Daniel Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  Eric G. Webb ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

发明人： Jingbin Feng ,  Steven T. Mayer ,  Daniel Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  Eric G. Webb ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

IPC分类号： B05C11/02

CPC分类号： C23C18/1619 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76841

摘要： During fluid treatment of a substrate surface, a carrier/wafer assembly containing a substrate wafer closes the top of a microcell container. The carrier/wafer assembly and the container walls define a thin enclosed treatment volume that is filled with treating fluid, such as electroless plating solution. The thin fluid-treatment volume typically has a volume in a range of about from 100 ml to 500 ml. Preferably a container is heated and the treating fluid is pre-heated before being injected into the container. Preferably, the chemical composition, temperature, and other properties of fluid in the thin enclosed fluid-treatment volume are dynamically variable. A rinse shield and a rinse nozzle are located above the container. A carrier/wafer assembly in a rinse position substantially closes the top of the rinse shield.

摘要翻译： 在衬底表面的流体处理期间，包含衬底晶片的载体/晶片组件封闭微孔容器的顶部。 载体/晶片组件和容器壁限定了用处理流体例如化学镀溶液填充的薄封闭处理体积。 薄流体处理体积通常具有在约100ml至500ml范围内的体积。 优选地，将容器加热并且将处理流体在被注入容器之前被预热。 优选地，薄封闭流体处理体积中的流体的化学组成，温度和其它性质是动态可变的。 冲洗屏和冲洗喷嘴位于容器上方。 漂洗位置的载体/晶片组件基本上封闭了冲洗屏蔽的顶部。

公开(公告)号：US08415261B1

公开(公告)日：2013-04-09

申请号：US13270809

申请日：2011-10-11

申请人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC分类号： H01L21/00 ,  B01J19/12

CPC分类号： H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

公开(公告)号：US08257781B1

公开(公告)日：2012-09-04

申请号：US11201709

申请日：2005-08-11

申请人： Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

发明人： Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

IPC分类号： C23C14/00

CPC分类号： C23C18/1617 ,  C23C18/1632 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76841

摘要： A main reservoir holds cool reactant liquid. A reaction vessel for treating a substrate is connected to the main reservoir by a feed conduit. A heater is configured to heat reactant liquid in the feed conduit before the liquid enters the reaction vessel. Preferably, the heater is a microwave heater. A recycle conduit connects the reaction vessel with the main reservoir. Preferably, a recycle cooler cools reactant liquid in the recycle conduit before the liquid returns to the main reservoir. Preferably, an accumulation vessel is integrated in the feed conduit for accumulating, heating, conditioning and monitoring reactant liquid before it enters the reaction vessel. Preferably, a recycle accumulator vessel is integrated in the recycle conduit to accommodate reactant liquid as it empties out of the reaction vessel.

摘要翻译： 主要储存器容纳冷反应液体。 用于处理基板的反应容器通过进料导管连接到主容器。 加热器构造成在液体进入反应容器之前加热进料管道中的反应物液体。 优选地，加热器是微波加热器。 回收管道将反应容器与主储存器连接。 优选地，再循环冷却器在液体返回到主储存器之前冷却循环管道中的反应物液体。 优选地，积聚容器集成在进料管道中，用于在反应液进入反应容器之前积聚，加热，调节和监测反应液体。 优选地，再循环蓄能器容器集成在再循环管道中，以便当反应物液体从反应容器中排出时容纳反应液体。

公开(公告)号：US07338908B1

公开(公告)日：2008-03-04

申请号：US10690084

申请日：2003-10-20

申请人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

发明人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

IPC分类号： H01L21/302

CPC分类号： H01L21/32134 ,  H01L21/02068 ,  H01L21/321 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76883

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

公开(公告)号：US07531463B2

公开(公告)日：2009-05-12

申请号：US11586394

申请日：2006-10-24

申请人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

发明人： Daniel A. Koos ,  Steven T. Mayer ,  Heung L. Park ,  Timothy Patrick Cleary ,  Thomas Mountsier

IPC分类号： H01L21/302

CPC分类号： C23F1/18 ,  C23C18/1608 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/1696 ,  C23C18/1893 ,  C23F1/34 ,  H01L21/288 ,  H01L21/32134 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.

摘要翻译： 描述了用于选择性地蚀刻衬底的暴露的金属表面并在金属表面上形成导电覆盖层的蚀刻工艺。 在一些实施例中，蚀刻工艺涉及暴露的金属的氧化以形成随后从衬底的表面去除的金属氧化物。 暴露的金属可以通过使用含有氧化剂如过氧化物的溶液或通过使用氧化气体例如含氧或臭氧的氧化气体来氧化。 然后使用合适的金属氧化物蚀刻剂如甘氨酸除去所产生的金属氧化物。 氧化和蚀刻可能发生在相同的溶液中。 在其它实施例中，暴露的金属被直接蚀刻而不形成金属氧化物。 合适的直接金属蚀刻剂包括任何数量的酸性溶液。 该方法允许减少点蚀的受控氧化和/或蚀刻。 在金属区域被蚀刻并凹入基板表面之后，使用无电沉积形成在凹入的暴露的金属区域上的导电覆盖层。

公开(公告)号：US08513124B1

公开(公告)日：2013-08-20

申请号：US12785205

申请日：2010-05-21

申请人： Thomas A. Ponnuswamy ,  John H. Sukamto ,  Jonathan D. Reid ,  Steven T. Mayer

发明人： Thomas A. Ponnuswamy ,  John H. Sukamto ,  Jonathan D. Reid ,  Steven T. Mayer

IPC分类号： H01L21/44

CPC分类号： H01L21/76873 ,  C25D3/38 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L2221/1089

摘要： Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the semi-noble metal layer that the copper seed layer is deposited on, and methods for promoting a more uniform copper seed layer deposition across a semiconductor wafer.

摘要翻译： 公开了一种沉积铜籽晶层的方法，该铜籽晶层用于随后电镀铜的体层。 铜种子层可以以不同的工艺沉积，包括CVD，PVD和电镀。 利用用于沉积铜籽晶层的电镀方法，公开了用于沉积铜合金晶种层的方法，用非腐蚀性电解质在半贵金属层上沉积铜籽晶层的方法，处理半贵金属的方法 沉积铜籽晶层的层，以及用于促进越过半导体晶片的更均匀的铜籽晶层沉积的方法。