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公开(公告)号：US08227335B2
公开(公告)日：2012-07-24
申请号：US11897862
申请日：2007-08-31
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
摘要翻译： 贵金属可用作非氧化扩散阻挡层，以防止铜线扩散。 扩散阻挡层可以由在可氧化扩散阻挡层上形成在粘附促进层上或由贵金属盖形成的贵金属形成。 铜线也可以用贵金属覆盖。
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公开(公告)号：US07279423B2
公开(公告)日：2007-10-09
申请号：US10284576
申请日：2002-10-31
IPC分类号： H01L21/00
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
摘要翻译： 贵金属可用作非氧化扩散阻挡层，以防止铜线扩散。 扩散阻挡层可以由在可氧化扩散阻挡层上形成在粘附促进层上或由贵金属盖形成的贵金属形成。 铜线也可以用贵金属覆盖。
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公开(公告)号：US07550385B2
公开(公告)日：2009-06-23
申请号：US11240005
申请日：2005-09-30
申请人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
发明人： Adrien R. Lavoie , Valery M. Dubin , Juan E. Dominguez , Kevin P. O'Brien , Steven W. Johnston , John D. Peck , David M. Thompson , David W. Peters
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.
摘要翻译： 形成金属碳化物层的方法开始于提供衬底，有机金属前体材料，至少一种掺杂剂如氮气，以及诸如氢等离子体的等离子体。 将基板放置在反应室内; 并加热。 然后进行处理循环，其中工艺循环包括将有机金属前体材料脉冲到反应室中，将掺杂剂脉冲到反应室中，并将等离子体脉冲到反应室中，使得有机金属前体材料，掺杂剂 并且等离子体在基板表面反应形成金属碳化物层。 可以重复和改变工艺循环以形成渐变的金属碳化物层。
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公开(公告)号：US07459392B2
公开(公告)日：2008-12-02
申请号：US11096345
申请日：2005-03-31
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76871
摘要： A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region between the barrier and noble metal layers to prevent oxidation of the barrier layer.
摘要翻译： 描述了用于半导体镶嵌工艺的阻挡层和籽晶层。 种子层由贵金属形成，在阻挡层和贵金属层之间具有中间区域，以防止阻挡层氧化。
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5.发明申请INTEGRATING A BOTTOMLESS VIA TO PROMOTE ADSORPTION OF ANTISUPPRESSOR ON EXPOSED COPPER SURFACE AND ENHANCE ELECTROPLATING SUPERFILL ON NOBLE METALS 审中-公开通过在曝光铜表面上促进抗反射涂层的吸附和增强金属镀层上的电镀公开(公告)号：US20100164108A1
公开(公告)日：2010-07-01
申请号：US12722349
申请日：2010-03-11
IPC分类号： H01L23/52
CPC分类号： C25D5/022 , C23C18/1608 , C23C18/165 , C23C18/32 , C25D3/38 , C25D7/123 , H01L21/2885 , H01L21/76844 , H01L21/76873 , H01L21/76877 , Y10T29/49117 , Y10T29/49155
摘要： A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.
摘要翻译： 描述了形成铜互连的方法。 形成设置在基板上的电介质层的开口部。 在开口上形成阻挡层。 种子层形成在阻挡层上。 种子层包括贵金属铜合金，铜的贵金属铜合金的原子量小于50％。
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公开(公告)号：US07241706B2
公开(公告)日：2007-07-10
申请号：US10944358
申请日：2004-09-16
申请人： Steven W. Johnston , Nate Baxter
发明人： Steven W. Johnston , Nate Baxter
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76829 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： Embodiments of the invention provide a relatively hydrophilic layer in a low k dielectric layer. The hydrophilic layer may be formed by exposing the dielectric layer to light having enough energy to break Si—C and C—C bonds but not enough to break Si—O bonds.
摘要翻译： 本发明的实施例提供了在低k电介质层中的相对亲水层。 亲水层可以通过将介电层暴露于具有足够能量以破坏Si-C和C-C键但不足以破坏Si-O键的光而形成。
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公开(公告)号：US07694413B2
公开(公告)日：2010-04-13
申请号：US11479399
申请日：2006-06-30
IPC分类号： H01R43/00
CPC分类号： C25D5/022 , C23C18/1608 , C23C18/165 , C23C18/32 , C25D3/38 , C25D7/123 , H01L21/2885 , H01L21/76844 , H01L21/76873 , H01L21/76877 , Y10T29/49117 , Y10T29/49155
摘要： A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.
摘要翻译： 描述了形成铜互连的方法。 形成设置在基板上的电介质层的开口部。 在开口上形成阻挡层。 种子层形成在阻挡层上。 种子层包括贵金属铜合金，铜的贵金属铜合金的原子量小于50％。
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公开(公告)号：US20090155998A1
公开(公告)日：2009-06-18
申请号：US12317537
申请日：2008-12-24
IPC分类号： H01L21/441
CPC分类号： H01L21/76843 , H01L21/28562
摘要： Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.
摘要翻译： 在形成金属的过程中，在至少一种电介质材料内制造含有原子层沉积钽的原子层沉积钽的装置和方法，其中包含粘附层的原子层沉积钽足够薄以最小化接触电阻并最大化总截面积 的金属，包括但不限于钨。
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公开(公告)号：US06682989B1
公开(公告)日：2004-01-27
申请号：US10300378
申请日：2002-11-20
IPC分类号： H01L2176
CPC分类号： H01L21/312 , C23C18/1607 , C23C18/1639 , C23C18/1641 , C23C18/1653 , C23C18/1868 , C23C18/1893 , H01L21/02282 , H01L21/02348 , H01L21/288 , H01L21/3205 , H01L21/76843 , H01L21/76874 , H01L23/53238
摘要： A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions and metal regions exposed, for example, may have the organic polymers formed selectively on the organic regions and not on the unpolymerizable or metal regions.
摘要翻译： 使用诱导的表面接枝或聚合反应可以用聚合物选择性地涂布表面。 反应在可聚合的区域中进行，而不在其它区域。 因此，具有例如露出的有机区域和金属区域的半导体结构可以具有在有机区域而不是在不可聚合或金属区域上有选择地形成的有机聚合物。
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公开(公告)号：US06596888B2
公开(公告)日：2003-07-22
申请号：US09858037
申请日：2001-05-15
申请人： Lisa McElwee-White , Timothy J. Anderson , Steven W. Johnston , Carlos G. Ortiz , Omar J. Bchir
发明人： Lisa McElwee-White , Timothy J. Anderson , Steven W. Johnston , Carlos G. Ortiz , Omar J. Bchir
IPC分类号： C07F1100
CPC分类号： H01L21/76846 , H01L21/28556 , H01L21/76849
摘要： Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula LyW(NR)Xn, where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and Ly and Xn are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.
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