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公开(公告)号：US20060088950A1
公开(公告)日：2006-04-27
申请号：US11247935
申请日：2005-10-11
IPC分类号： H01L21/36
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。
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公开(公告)号：US20060194356A1
公开(公告)日：2006-08-31
申请号：US11238319
申请日：2005-09-29
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译： 本发明提供一种形成多波长半导体激光器件的方法。 该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn（1-xy）P（0≤x≤1,0<= y <= 1）组成的蚀刻停止层） 在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后，在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。
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公开(公告)号：US20070114564A1
公开(公告)日：2007-05-24
申请号：US11602285
申请日：2006-11-21
IPC分类号： H01L33/00
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。
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公开(公告)号：US20060158088A1
公开(公告)日：2006-07-20
申请号：US11325312
申请日：2006-01-05
CPC分类号： C23C14/042 , H01L51/0011 , Y10T29/49867
摘要： Disclosed is a method of forming a pattern on a mask sheet including an attaching portion to be attached to a mask frame, and a pattern area in which the pattern is formed. The method includes positioning the mask sheet on an auxiliary sheet with a thickness greater than the thickness of the mask sheet, fastening the auxiliary sheet to the mask frame, applying a stretching force to the mask sheet and the auxiliary sheet, and forming the pattern on the pattern area of the mask sheet. Thus, a predetermined pattern is formed on a mask sheet while a uniformly distributed external force is applied to the mask sheet, so that bending or deflecting out of plane by the mask sheet is prevented, thereby forming a precise mask pattern.
摘要翻译： 公开了一种在掩模板上形成图案的方法，该掩模板包括附着到掩模框架的附接部分和形成图案的图案区域。 该方法包括将掩模片定位在厚度大于掩模片的厚度的辅助片上，将辅助片固定到掩模框架上，向掩模片和辅助片施加拉伸力，并将形状形成在 掩模片的图案区域。 因此，在均匀分布的外力施加到掩模片上时，在掩模板上形成预定图案，从而防止由掩模片弯曲或偏转出平面，从而形成精确的掩模图案。
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公开(公告)号：US20060278888A1
公开(公告)日：2006-12-14
申请号：US11443155
申请日：2006-05-31
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/42 , H01L2933/0083
摘要： The present invention relates to a vertically-structured nitride semiconductor light emitting diode. The vertically-structured nitride semiconductor light emitting diode includes an n-type electrode; an n-type nitride semiconductor layer that is formed on the lower surface of the n-type electrode and on which surface texturing with a diffraction grating structure is formed, the diffraction grating structure composed of more than one line; an active layer that is formed on the lower surface of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the lower surface of the active layer; and a p-type electrode that is formed on the lower surface of the p-type nitride semiconductor layer.
摘要翻译： 本发明涉及一种垂直结构的氮化物半导体发光二极管。 垂直结构的氮化物半导体发光二极管包括n型电极; n型氮化物半导体层，其形成在n型电极的下表面上，并且在其上形成有衍射光栅结构的表面纹理，所述衍射光栅结构由多条线组成; 形成在所述n型氮化物半导体层的下表面上的有源层; p型氮化物半导体层，形成在有源层的下表面上; 以及形成在p型氮化物半导体层的下表面上的p型电极。
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公开(公告)号：US20070021511A1
公开(公告)日：2007-01-25
申请号：US10548310
申请日：2003-03-07
申请人： Su Lee , Yun Lee , Soo Kim , Kyung Kim , Chul Cho , Chang Kang , Tae Kim , Sangwoo Bae , Moon Park , Jung Choi , Min Kim , Hee Chung , Sujong Kim , Seongman Kang , Weon Choi , Jung Kang
发明人： Su Lee , Yun Lee , Soo Kim , Kyung Kim , Chul Cho , Chang Kang , Tae Kim , Sangwoo Bae , Moon Park , Jung Choi , Min Kim , Hee Chung , Sujong Kim , Seongman Kang , Weon Choi , Jung Kang
CPC分类号： A61K31/164 , A61K31/133
摘要： Provided is a composition for cancer treatment including phytosphingosine or a derivative thereof, or a pharmaceutically acceptable salt thereof as an active ingredient.
摘要翻译： 本发明提供包含植物鞘氨醇或其衍生物或其药学上可接受的盐作为活性成分的癌症治疗用组合物。
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公开(公告)号：US20070121312A1
公开(公告)日：2007-05-31
申请号：US11602310
申请日：2006-11-21
IPC分类号： G01D11/28
CPC分类号： G01D11/28
摘要： The present invention relates to a lighting device for display device used in vehicles, the light device including an indicator provided with a rotating shaft; a graphic plate disposed under the indicator and having a through hole formed in the center thereof, into which the rotating shaft is inserted; and an LED section that is disposed under the graphic plate, generates light onto the graphic plate, and is provided with LED chips having different colors.
摘要翻译： 本发明涉及一种用于车辆的显示装置的照明装置，该灯装置包括设有旋转轴的指示器; 布置在所述指示器下方并且在其中心形成有通孔的图形板，所述旋转轴插入所述通孔中; 以及布置在图形板下面的LED部分，在图形板上产生光，并且具有不同颜色的LED芯片。
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公开(公告)号：US20070108467A1
公开(公告)日：2007-05-17
申请号：US11599266
申请日：2006-11-15
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/22
摘要： A vertical GaN-based LED is provided. The vertical GaN-based LED includes an n-type bonding pad, an n-type reflective electrode formed under the n-type bonding pad, an n-type transparent electrode formed under the n-type reflective electrode, an n-type GaN layer formed under the n-type transparent electrode, an active layer formed under the n-type GaN layer, a p-type GaN layer formed under the active layer, a p-electrode formed under the p-type GaN layer and having an uneven profile at a surface which does not come in contact with the p-type GaN layer, a p-type reflective electrode formed along the uneven surface of the p-type electrode, and a support layer formed under the p-type reflective electrode.
摘要翻译： 提供垂直的GaN基LED。 垂直GaN基LED包括n型接合焊盘，形成在n型接合焊盘下面的n型反射电极，形成在n型反射电极下方的n型透明电极，n型GaN层 形成在n型透明电极下面，形成在n型GaN层下面的有源层，在有源层下面形成的p型GaN层，在p型GaN层下面形成的具有不平坦轮廓的p电极 在不与p型GaN层接触的表面上形成有沿p型电极的不平坦表面形成的p型反射电极和在p型反射电极下形成的支撑层。
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9.发明申请Printed circuit board including embedded capacitors and method of manufacturing the same 有权印刷电路板包括嵌入式电容器及其制造方法公开(公告)号：US20060032666A1
公开(公告)日：2006-02-16
申请号：US11031508
申请日：2005-01-06
IPC分类号： H05K1/16
CPC分类号： H05K1/162 , H05K1/0373 , H05K3/4602 , H05K3/4623 , H05K3/4688 , H05K2201/0209 , H05K2201/09536 , H05K2201/09672 , Y10T29/435 , Y10T29/49126 , Y10T29/4913 , Y10T29/49155 , Y10T29/49165
摘要： Disclosed herein is a printed circuit board including embedded capacitors, composed of a polymer condenser laminate including a plurality of polymer condenser layers, each of which has a polymer sheet and a conductor pattern formed on the polymer sheet, and a via hole for interlayer connection therethrough, and a circuit layer formed on either surface or both surfaces of the polymer condenser laminate and having a circuit pattern and a via hole for interlayer connection therethrough. The printed circuit board of the current invention has higher capacitance density per unit area than conventional embedded capacitor printed circuit boards, whereby capacitors having various capacitance values, such as multilayered ceramic capacitors having high capacitance, can be embedded in the printed circuit board, instead of being mounted thereon. Also, a method of manufacturing the printed circuit board including embedded capacitors is provided.
摘要翻译： 本发明公开了一种印刷电路板，其包括嵌入式电容器，其由聚合物冷凝器层压体构成，聚合物冷凝层压板包括多个聚合物聚合物层，每个聚合物聚合物层具有形成在聚合物片上的聚合物片和导体图案，以及用于层间连接的通孔 以及形成在聚合物冷凝层叠体的任一表面或两个表面上的电路层，并且具有电路图案和用于通过其进行层间连接的通孔。 本发明的印刷电路板具有比常规的嵌入式电容器印刷电路板更高的每单位面积的电容密度，由此具有各种电容值的电容器，例如具有高电容的多层陶瓷电容器可以嵌入印刷电路板中，而不是 安装在其上。 此外，提供了一种制造包括嵌入式电容器的印刷电路板的方法。
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10.发明申请PRINTED CIRCUIT BOARD HAVING EMBEDDED CAPACITORS USING HYBRID MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开使用混合材料的嵌入式电容器的印刷电路板及其制造方法公开(公告)号：US20070125574A1
公开(公告)日：2007-06-07
申请号：US11672245
申请日：2007-02-07
IPC分类号： H05K1/16
CPC分类号： H05K1/162 , H05K3/4611 , H05K3/4626 , H05K3/4652 , H05K3/4655 , H05K3/4688 , H05K2201/0141 , H05K2201/0209 , H05K2201/09309 , H05K2201/09509 , H05K2201/09518 , H05K2201/09672 , Y10T29/43 , Y10T29/435 , Y10T29/4913
摘要： The present invention is related to a printed circuit board having embedded capacitors using a hybrid material and a method of manufacturing the same. This invention provides a printed circuit board having embedded capacitors using a material for a hybrid dielectric layer including liquid crystal polymer and ceramic powder, and a method of manufacturing such a printed circuit board.
摘要翻译： 本发明涉及具有使用混合材料的嵌入式电容器的印刷电路板及其制造方法。 本发明提供了一种具有嵌入式电容器的印刷电路板，以及使用包括液晶聚合物和陶瓷粉末的混合电介质层的材料，以及制造这种印刷电路板的方法。
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