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公开(公告)号：US20050116792A1
公开(公告)日：2005-06-02
申请号：US10817822
申请日：2004-04-06
摘要： Provided is a microwave tunable device having a coplanar waveguide structure, comprising a substrate, a ferroelectric/paraelectric thin film, a first transmission line, and second transmission lines, wherein a transmission line portion is formed with a constant width and an input/output portion is formed with a width larger than that of the transmission line portion in the first transmission line, and a transmission line portion is formed with a constant width and an input/output portion is formed with a narrower width than that of the transmission line portion in the second transmission line, whereby it is possible to minimize impedance difference with a connection line, a reflection loss, and an insertion loss, by controlling the width of the first transmission line and gap between the first and the second transmission lines, in the input/output portion.
摘要翻译： 本发明提供一种具有共面波导结构的微波可调谐装置，包括基板，铁电/顺电薄膜，第一传输线和第二传输线，其中传输线部分形成为恒定宽度，输入/输出部分 形成为具有比第一传输线中的传输线部分的宽度大的宽度，并且传输线部分形成为具有恒定的宽度，并且输入/输出部分形成为具有比传输线部分的宽度更窄的宽度 第二传输线，通过在输入端控制第一传输线的宽度和第一和第二传输线之间的间隙，可以使与连接线的阻抗差，反射损耗和插入损耗最小化 /输出部分。
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2.发明申请Lateral tunable capacitor and high frequency tunable device having the same 审中-公开横向可调谐电容器和具有相同功能的高频可调谐器件公开(公告)号：US20060125052A1
公开(公告)日：2006-06-15
申请号：US11210015
申请日：2005-08-22
申请人： Seung Moon , Han Ryu , Young Kim , Min Kwak , Su Lee , Kwang Kang
发明人： Seung Moon , Han Ryu , Young Kim , Min Kwak , Su Lee , Kwang Kang
IPC分类号： H01L29/93
CPC分类号： H01L28/82 , H01L27/0808
摘要： A lateral type tunable capacitor and a high frequency tunable device having the same are provided. The high frequency tunable device includes substrate; a signal line formed on the substrate; a plurality of tunable capacitors aligned on both sides of the signal line along the longitudinal direction of the signal line; an electrode disposed on the substrate for applying a DC voltage to the tunable capacitors. The tunable capacitor includes a dielectric layer formed on the substrate, and a first capacitor electrode and a second capacitor electrode formed on both sides of the dielectric layer on the substrate, and the first capacitor electrode, the dielectric layer, and the second capacitor electrode are aligned in parallel on the substrate.
摘要翻译： 提供了一种横向型可调电容器和具有该横向型可调电容器的高频可调谐器件。 高频可调谐装置包括基板; 形成在基板上的信号线; 多个可调谐电容器，沿信号线的纵向排列在信号线的两侧; 设置在所述基板上的用于向所述可调电容器施加DC电压的电极。 可调谐电容器包括形成在基板上的电介质层，以及形成在基板上的电介质层两侧的第一电容电极和第二电容电极，第一电容电极，电介质层和第二电容器电极是 在基板上平行排列。
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3.发明申请公开(公告)号：US20060118843A1
公开(公告)日：2006-06-08
申请号：US11180744
申请日：2005-07-12
申请人： Su Lee , Seung Moon , Han Ryu , Min Kwak , Kwang Kang
发明人： Su Lee , Seung Moon , Han Ryu , Min Kwak , Kwang Kang
CPC分类号： H01L21/022 , H01G7/06 , H01L21/02197 , H01L21/0226 , H01L21/31691 , H01L28/56 , H01P1/181
摘要： A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
摘要翻译： 具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜，以克服介电常数的调谐率和铁电薄膜的介电损耗的限制，其形成方法和高 提供具有铁电/顺电多层薄膜的高频可变器件。 铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层和外延铁电（Ba x Sr Sr 1-x < / SUB>）TiO 3薄膜形成在顺电种子层上。 高频可变装置可以实现具有高速度，低功耗，低价格和优异的微波特性的RF频率/相位可变装置。
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4.发明申请Ferroelectric epitaxial thin film for microwave tunable device and microwave tunable device using the same 审中-公开用于微波可调谐器件的铁电外延薄膜和使用其的微波可调谐器件公开(公告)号：US20050128029A1
公开(公告)日：2005-06-16
申请号：US10817852
申请日：2004-04-06
申请人： Su Lee , Seung Moon , Han Ryu , Min Kwak
发明人： Su Lee , Seung Moon , Han Ryu , Min Kwak
CPC分类号： H01P1/181
摘要： Provided are a ferroelectric epitaxial thin film for a microwave tunable device including a ferroelectric BaTiO3 seed layer and an epitaxial (Ba1-xSrx)TiO3 thin film, and a microwave tunable device using the same, whereby it is possible to improve the microwave response property of the microwave tunable device, and to enhance the quality of the wireless communication with ultra high speed, low electric power, low cost, and high sensitivity, by using the device of the present invention as an active antenna system, a satellite communication system, or a wireless sensor system,
摘要翻译： 提供了一种用于微波可调器件的铁电外延薄膜，其包括铁电BaTiO 3种子层和外延（Ba 1-x Sr Sr x 3） ）TiO 3薄膜，以及使用其的微波可调谐装置，由此可以提高微波可调谐装置的微波响应特性，并且以超高的方式提高无线通信的质量 通过使用本发明的装置作为有源天线系统，卫星通信系统或无线传感器系统，可以实现高速度，低功率，低成本和高灵敏度，
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公开(公告)号：US20080241982A1
公开(公告)日：2008-10-02
申请号：US11878503
申请日：2007-07-25
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
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6.发明申请Filter for plasma display panel with good re-workability and plasma display panel comprising the same 审中-公开具有良好的再加工性的等离子体显示面板的过滤器和包括其的等离子体显示面板公开(公告)号：US20060159936A1
公开(公告)日：2006-07-20
申请号：US11333313
申请日：2006-01-18
IPC分类号： B32B27/30
CPC分类号： H01J11/44 , H01J11/10 , H01J2211/446 , Y10T428/31663 , Y10T428/31935
摘要： This invention relates to a filter for a plasma display panel having excellent re-workability, durability, and reliability and a plasma display panel including the same. The filter for a plasma display panel of this invention is characterized by including an acrylic pressure-sensitive adhesive composition layer having adhesion after the lapse of a predetermined time period that is at least 1.5 times as great as initial adhesion. Since the inventive filter for a plasma display panel has low initial adhesion, when a defect occurs in a process of attaching the filter for a plasma display panel to an upper glass plate of the panel, a separation process may be easily conducted, and also adhesion increases with the lapse of time, thus exhibiting good durability and reliability without air bubbling and peeling.
摘要翻译： 本发明涉及一种具有优异的再加工性，耐久性和可靠性的等离子体显示面板用滤波器和包括该等离子体显示面板的等离子体显示面板。 本发明的等离子体显示面板用过滤器的特征在于，在经过预定时间段之后具有至少是初始粘合力的1.5倍的粘合性的丙烯酸系压敏粘合剂组合物层。 由于用于等离子体显示面板的本发明的滤光器具有低的初始粘附性，所以当在用于等离子体显示面板的过滤器附着到面板的上部玻璃板的过程中发生缺陷时，可以容易地进行分离过程，并且还附着 随着时间的推移而增加，因此在没有气泡和剥离的情况下表现出良好的耐久性和可靠性。
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7.发明申请公开(公告)号：US20060159915A1
公开(公告)日：2006-07-20
申请号：US11333319
申请日：2006-01-18
CPC分类号： C09J153/00 , C08L71/00 , C08L83/12 , C08L2666/02 , C08L2666/04 , C08L2666/14 , C09J7/385 , C09J133/066 , C09J151/085 , C09J2201/606 , H01J2211/44 , Y10T428/2891
摘要： This invention relates to an acrylic pressure-sensitive adhesive composition, including a) 100 parts by weight of an acrylic copolymer containing a hydroxy group without a carboxyl group; b) 0.01˜10 parts by weight of a cross-linkging agent; and c) 0.01˜5 parts by weight of a polyether modified polydimethylsiloxane copolymer having HLB of 4˜13 and having the structure of Formula 1, and to an adhesive sheet formed thereby. The adhesive composition and adhesive sheet according to this invention may exhibit excellent re-workability, durability, and reliability.
摘要翻译： 本发明涉及一种丙烯酸类压敏粘合剂组合物，其包括a）100重量份含有不含羧基的羟基的丙烯酸共聚物; b）0.01〜10重量份的交联剂; 和c）0.01〜5重量份HLB为4〜13，具有式1结构的聚醚改性聚二甲基硅氧烷共聚物和由其形成的粘合片。 根据本发明的粘合剂组合物和粘合片可以表现出优异的再加工性，耐久性和可靠性。
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公开(公告)号：US20070114564A1
公开(公告)日：2007-05-24
申请号：US11602285
申请日：2006-11-21
IPC分类号： H01L33/00
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。
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9.发明申请公开(公告)号：US20060277568A1
公开(公告)日：2006-12-07
申请号：US11432718
申请日：2006-05-12
CPC分类号： G06Q30/02
摘要： Method for making compensation for advertising on a display device of a home appliance including the steps of displaying a predetermined advertisement data on a display device of the home appliance, producing a display result data on a result of the display of the advertisement data, accumulating electronic cash of a predetermined amount for the user of the home appliance according to the display result data.
摘要翻译： 在家用电器的显示装置上进行广告补偿的方法，包括以下步骤：在家用电器的显示装置上显示预定的广告数据，产生关于广告数据的显示结果的显示结果数据，累积电子 根据显示结果数据，用于家用电器的用户的预定金额的现金。
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公开(公告)号：US20060194356A1
公开(公告)日：2006-08-31
申请号：US11238319
申请日：2005-09-29
IPC分类号： H01L21/00
CPC分类号： H01S5/4031 , H01S5/209 , H01S5/32316 , H01S5/32325 , H01S5/4087
摘要： The present invention provides a method for forming a multi-wavelength semiconductor laser device. The method comprises sequentially forming an AlGaAs-based epitaxial layer for a first semiconductor laser diode and an etching stop layer composed of AlxGayIn(1-x-y)P (0≦x≦1, 0≦y≦1) on a substrate and sequentially growing an n-type GaAs flattening buffer layer and an AlGaInP-based epitaxial layer for a second semiconductor laser diode on the substrate, after selectively removing the AlGaAs-based epitaxial layer and the etching stop layer.
摘要翻译： 本发明提供一种形成多波长半导体激光器件的方法。 该方法包括顺序形成用于第一半导体激光二极管的AlGaAs基外延层和由AlxGayIn（1-xy）P（0≤x≤1,0<= y <= 1）组成的蚀刻停止层） 在选择性地除去基于AlGaAs的外延层和蚀刻停止层之后，在衬底上顺序生长n型GaAs平坦化缓冲层和用于第二半导体激光二极管的AlGaInP基外延层。
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