公开(公告)号：US08366028B2

公开(公告)日：2013-02-05

申请号：US13158941

申请日：2011-06-13

申请人： Sumiaki Nakano ,  Akihide Sugawa ,  Fumio Mihara ,  Yasunori Matsui ,  Kishiko Hirai

发明人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Fumio Mihara ,  Yasunori Matsui

IPC分类号： B05B5/00 ,  B05B5/53 ,  F23D11/32 ,  B03C3/00

CPC分类号： B05B5/0533 ,  B05B5/0255 ,  B05B5/057

摘要： An electrostatic atomizer equipped with an electrostatic atomization pole having superior resistance to migration. The atomizer includes an electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

摘要翻译： 具有静电雾化极的静电雾化器具有优异的耐迁移性。 雾化器包括静电雾化极，向极提供液体的液体供给机构，以及高压供给极的电源，以使保持在极上的液体静电雾化。 在极的表面上形成涂层，涂层由简单的金属或合金形成，显示出对迁移的抵抗力。

公开(公告)号：US20110240772A1

公开(公告)日：2011-10-06

申请号：US13158941

申请日：2011-06-13

申请人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Kishiko Hirai ,  Fumio Mihara ,  Yasunori Matsui

发明人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Kishiko Hirai ,  Fumio Mihara ,  Yasunori Matsui

IPC分类号： B05B5/00

CPC分类号： B05B5/0533 ,  B05B5/0255 ,  B05B5/057

摘要： An electrostatic atomizer equipped with an electrostatic atomization pole having superior migration-proof. The atomizer comprises the electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

摘要翻译： 具有静电雾化极的静电雾化器具有优异的耐迁移性。 雾化器包括静电雾化极，向柱提供液体的液体供应机构，以及向极提供高电压的电源，以静电雾化保持在极上的液体。 在极的表面上形成涂层，涂层由简单的金属或合金形成，显示出对迁移的抵抗力。

公开(公告)号：US07980493B2

公开(公告)日：2011-07-19

申请号：US11988630

申请日：2006-07-14

申请人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Kishiko Hirai, legal representative ,  Fumio Mihara ,  Yasunori Matsui

发明人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Fumio Mihara ,  Yasunori Matsui

IPC分类号： B05B5/00 ,  B05B5/053 ,  F23D11/32

CPC分类号： B05B5/0533 ,  B05B5/0255 ,  B05B5/057

摘要： An electrostatic atomizer equipped with an electrostatic atomization pole having superior resistance to migration. The atomizer includes an electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

摘要翻译： 具有静电雾化极的静电雾化器具有优异的耐迁移性。 雾化器包括静电雾化极，向极提供液体的液体供给机构，以及高压供给极的电源，以使保持在极上的液体静电雾化。 在极的表面上形成涂层，涂层由简单的金属或合金形成，显示出对迁移的抵抗力。

公开(公告)号：US20090121050A1

公开(公告)日：2009-05-14

申请号：US11988630

申请日：2006-07-14

申请人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Kishiko Hirai ,  Fumio Mihara ,  Yasunori Matsui

发明人： Sumiaki Nakano ,  Akihide Sugawa ,  Toshihisa Hirai ,  Kishiko Hirai ,  Fumio Mihara ,  Yasunori Matsui

IPC分类号： F23D11/32

CPC分类号： B05B5/0533 ,  B05B5/0255 ,  B05B5/057

摘要： An electrostatic atomizer equipped with an electrostatic atomization pole having superior migration-proof. The atomizer comprises the electrostatic atomization pole, a liquid supply mechanism that supplies the pole with liquid, and a power supply that supplies the pole with high voltage to electrostatically atomize the liquid held on the pole. A coating is formed on the surface of the pole, and the coating is formed of simple metal or alloy, which displays resistance to migration.

摘要翻译： 具有静电雾化极的静电雾化器具有优异的耐迁移性。 雾化器包括静电雾化极，向柱提供液体的液体供应机构，以及向极提供高电压的电源，以静电雾化保持在极上的液体。 在极的表面上形成涂层，涂层由简单的金属或合金形成，显示出对迁移的抵抗力。

公开(公告)号：US08378505B2

公开(公告)日：2013-02-19

申请号：US13189097

申请日：2011-07-22

申请人： Sumiaki Nakano

发明人： Sumiaki Nakano

IPC分类号： H01L23/492

CPC分类号： H01L24/11 ,  H01L23/3171 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/81024 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/3841 ,  H01L2224/05552

摘要： A semiconductor substrate structure includes an electrode pad formed on a semiconductor substrate, a protective film formed on the semiconductor substrate with a distance from the electrode pad, and a bump formed on the electrode pad. The protective film has a barrier portion surrounding the electrode pad. The barrier portion has a height different from a height of a part of the protective film other than the barrier portion.

摘要翻译： 半导体衬底结构包括形成在半导体衬底上的电极焊盘，形成在半导体衬底上的与电极焊盘相距一定距离的保护膜和形成在电极焊盘上的凸块。 保护膜具有围绕电极焊盘的阻挡部。 阻挡部的高度不同于除了阻挡部以外的保护膜的一部分的高度。

公开(公告)号：US08492896B2

公开(公告)日：2013-07-23

申请号：US13034930

申请日：2011-02-25

申请人： Sumiaki Nakano

发明人： Sumiaki Nakano

IPC分类号： H01L23/488

CPC分类号： H01L24/11 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03903 ,  H01L2224/0401 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/10145 ,  H01L2224/11318 ,  H01L2224/1132 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/381 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： A semiconductor apparatus including: a substrate 12; a plurality of electrode pads 20 formed on a surface of the substrate 12; and a protection film 14 having a plurality of through holes 16 formed in one-to-one correspondence with the electrode pads 20, and covering circumferential edge portions of the electrode pads 20 and the surface of the substrate 12 except for areas under the electrode pads 20. An inner wall of each through hole 16 is a slant surface 22 slanted toward outside of the through hole 16. A plurality of metal layers 24 have been formed, each covering an exposed part of each electrode pad 20 not covered by the protection film 14 and an area of each slant surface extending from the exposed part up to a middle of the slant surface. A plurality of bumps 18 have been connected one-to-one with the metal layers 24.

摘要翻译： 一种半导体装置，包括：基板12; 形成在基板12的表面上的多个电极焊盘20; 以及保护膜14，其具有与电极焊盘20一一对应地形成的多个通孔16，并且覆盖电极焊盘20的周缘部分和基板12的表面，除了电极焊盘之下的区域 每个通孔16的内壁是朝向通孔16的外侧倾斜的倾斜表面22.已经形成多个金属层24，每个金属层24覆盖未被保护膜覆盖的每个电极焊盘20的暴露部分 14和从暴露部分延伸到倾斜表面的中间的每个倾斜表面的区域。 多个凸块18已经与金属层24一一连接。