公开(公告)号：US4590232A

公开(公告)日：1986-05-20

申请号：US709369

申请日：1985-03-11

申请人： Yoshihisa Tsubokura ,  Sumio Yamamoto ,  Eiji Aoishi ,  Tamio Fujita

发明人： Yoshihisa Tsubokura ,  Sumio Yamamoto ,  Eiji Aoishi ,  Tamio Fujita

IPC分类号： C08L27/22 ,  C08L1/00 ,  C08L25/14 ,  C08L27/00 ,  C08L27/24 ,  C08L33/00 ,  C08L33/02 ,  C08L33/04

CPC分类号： C08L25/14 ,  C08L27/24

摘要： A postchlorinated polyvinyl chloride composition having high processability for preparing molded products of outstanding properties comprises postchlorinated polyvinyl chloride and a copolymer of methyl methacrylate and a styrene monomer blended with the chloride. The composition has good thermal fluidity with good releasability from metal surface in processing and gives molded products of a high softening point and outstanding transparency.

摘要翻译： 用于制备出色性能的成型产品具有高加工性的后氯化聚氯乙烯组合物包括氯化聚氯乙烯和与氯化物共混的甲基丙烯酸甲酯和苯乙烯单体的共聚物。 该组合物具有良好的热流动性，在加工过程中具有良好的金属表面剥离性，并且得到高软化点和优异透明度的模塑制品。

公开(公告)号：US4546467A

公开(公告)日：1985-10-08

申请号：US463421

申请日：1983-02-03

申请人： Sumio Yamamoto

发明人： Sumio Yamamoto

IPC分类号： H04L12/24 ,  H04L12/26 ,  H04J1/16 ,  H04J3/14

CPC分类号： H04L43/0817 ,  H04L41/069

摘要： A monitoring device for monitoring the status of communication units connected to a common transmission medium. The monitoring device sequentially addresses each communication unit and transmits to the addressed unit an inquiry frame which includes in addition to the destination address, a source address field and a control information field. The addressed communication unit, if operating responds with a reply frame including the destination address of the monitor, its address, and a status information field. The received status information is compared with a previously received status information from the addressed control unit, and a primary fault is indicated when the compared informations do not coincide. A secondary fault is indicated if no reply frame is received from an addressed communication unit within a predetermined time from the transmission of the inquiry frame.

摘要翻译： 一种用于监视连接到公共传输介质的通信单元的状态的监视设备。 监视装置顺序地寻址每个通信单元，并向寻址单元发送除了目的地地址之外还包括源地址字段和控制信息字段的查询帧。 所寻址的通信单元，如果操作响应包括监视器的目的地地址，其地址和状态信息字段的应答帧。 将接收的状态信息与来自寻址的控制单元的先前接收的状态信息进行比较，并且当比较的信息不一致时指示主要故障。 如果在从发送查询帧开始的预定时间内没有从寻址的通信单元接收到应答帧，则指示辅助故障。

公开(公告)号：US4999402A

公开(公告)日：1991-03-12

申请号：US240659

申请日：1988-09-06

申请人： Sumio Yamamoto ,  Shinichi Sakurai

发明人： Sumio Yamamoto ,  Shinichi Sakurai

IPC分类号： C08F2/38 ,  C08F265/00 ,  C08F265/06 ,  C08L33/04 ,  C08L33/10 ,  C08L51/06

CPC分类号： C08F265/06

摘要： A methacrylic acid ester composition comprising 10 to 50 parts by weight of a cross-linked acrylic acid ester elastomer (A) and 50 to 90 parts by weight of a resin component, the total amount of the elastomer (A) and the resin component being 100 parts by weight; which is prepared by(a) preparing the cross-linked acrylic acid ester elastomer (A) by emulsion-polymerization,(b) adding a monomer component (B) to the elastomer (A) in the emulsion, and(c) polymerizing a monomer mixture (2) in the presence of the elastomer (A) to give the resin component.The composition is excellent in the processibility and can provide the film having the excellent transparency, weatherability, flexbility and whitening resistance to hot water.

公开(公告)号：US4578343A

公开(公告)日：1986-03-25

申请号：US717477

申请日：1985-03-28

申请人： Kinjiro Kosemura ,  Yoshimi Yamashita ,  Noriaki Nakayama ,  Sumio Yamamoto

发明人： Kinjiro Kosemura ,  Yoshimi Yamashita ,  Noriaki Nakayama ,  Sumio Yamamoto

IPC分类号： H01L29/812 ,  H01L21/027 ,  H01L21/28 ,  H01L21/338 ,  H01L29/417 ,  H01L29/80 ,  G03C5/00

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/0277 ,  H01L29/80 ,  Y10S438/949

摘要： A method for producing a field effect type semiconductor device includes the steps of forming a semiconductor active layer on a substrate, forming a resist layer on the semiconductor active layer, exposing a first portion of the resist layer in accordance with a gate electrode pattern, carrying out auxiliary exposure of a second portion near the first portion after or before the exposure of the first portion. The method further includes developing the exposed resist layer, forming a recess in the semiconductor active layer by etching the exposed semiconductor active layer using the resist layer as a mask and forming a gate electrode on the surface of the recess using the resist layer as a mask. This method improves the series resistance between the source electrode and the gate electrode, and also improves the Schottky withstand voltage between the drain electrode and the gate electrode.

摘要翻译： 一种场效应半导体器件的制造方法，其特征在于，在基板上形成半导体活性层，在半导体活性层上形成抗蚀剂层，根据栅电极图案露出抗蚀剂层的第一部分，承载 在第一部分的曝光之后或之前，在第一部分附近的第二部分的辅助曝光。 该方法进一步包括显影曝光的抗蚀剂层，通过使用抗蚀剂层作为掩模蚀刻暴露的半导体有源层，在半导体有源层中形成凹陷，并使用抗蚀剂层作为掩模在凹槽的表面上形成栅电极 。 该方法提高了源电极和栅电极之间的串联电阻，并且还提高了漏电极和栅电极之间的肖特基耐受电压。

公开(公告)号：US5221893A

公开(公告)日：1993-06-22

申请号：US840668

申请日：1992-02-20

申请人： Takeshi Kondou ,  Sumio Yamamoto

发明人： Takeshi Kondou ,  Sumio Yamamoto

IPC分类号： G01N27/20 ,  G01N33/32

CPC分类号： G01N33/32 ,  G01N27/205

摘要： In a method of diagnosing deterioration of a paint film, a probe is applied to the surface of a paint film. A voltage having a predetermined waveform is applied by a preamplifier across the probe and a base metal on which the paint film is formed. A current flowing through the paint film is measured by the preamplifier. An analog signal indicative of a measured current value is converted to a corresponding digital signal by an analog-to-digital converter. A personal computer operates to analyze the digital signal in accordance with a predetermined analyzing procedure so that the degree of deterioration of the paint film is determined. The resultant determination is displayed on the display.

摘要翻译： 在诊断涂膜劣化的方法中，将探针施加到漆膜的表面。 具有预定波形的电压通过前置放大器施加穿过探针和形成有漆膜的基底金属。 通过前置放大器测量流过漆膜的电流。 指示测量的电流值的模拟信号由模数转换器转换成相应的数字信号。 个人计算机根据预定的分析程序操作以分析数字信号，从而确定涂膜的劣化程度。 结果确定显示在显示屏上。

公开(公告)号：US4849368A

公开(公告)日：1989-07-18

申请号：US146664

申请日：1988-01-21

申请人： Yoshimi Yamashita ,  Kinjiro Kosemura ,  Hidetoshi Ishiwari ,  Sumio Yamamoto ,  Shigeru Kuroda

发明人： Yoshimi Yamashita ,  Kinjiro Kosemura ,  Hidetoshi Ishiwari ,  Sumio Yamamoto ,  Shigeru Kuroda

IPC分类号： H01L21/306 ,  H01L21/8236 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/778

CPC分类号： H01L27/0883 ,  H01L21/30621 ,  H01L21/8236 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/7787 ,  Y10S148/131 ,  Y10S148/168

摘要： Disclosed is a method of producing a compound semiconductor device comprising an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.

公开(公告)号：US4742379A

公开(公告)日：1988-05-03

申请号：US676359

申请日：1984-11-29

申请人： Yoshimi Yamashita ,  Kinjiro Kosemura ,  Hidetoshi Ishiwari ,  Sumio Yamamoto ,  Shigeru Kuroda

发明人： Yoshimi Yamashita ,  Kinjiro Kosemura ,  Hidetoshi Ishiwari ,  Sumio Yamamoto ,  Shigeru Kuroda

IPC分类号： H01L21/306 ,  H01L21/8236 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/778 ,  H01L29/80

CPC分类号： H01L27/0883 ,  H01L21/30621 ,  H01L21/8236 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/7787 ,  Y10S148/131 ,  Y10S148/168

摘要： A compound semiconductor device comprises an enhancement-mode transistor and a depletion-mode transistor, each of which has a heterojunction and utilizes a two-dimensional electron gas. The method of producing the device comprises the steps of: forming an undoped GaAs channel layer on a semi-insulating GaAs substrate; forming an N-type AlGaAs electron-supply layer so as to form the heterojunction; forming an N-type GaAs layer; forming an AlGaAs layer; selectively etching the AlGaAs layer to form a recess; performing an etching treatment using an etchant which can etch rapidly GaAs and etch slowly AlGaAs to form simultaneously grooves for gate electrodes of the enhancement-mode transistor and the depletion-mode transistor, the bottoms of the grooves being in the N-type AlGaAs layer and the distance between the bottoms being equal to the thickness of the AlGaAs layer; and forming simultaneously the gate electrodes in the grooves.

摘要翻译： 复合半导体器件包括增强型晶体管和耗尽型晶体管，其各自具有异质结并且利用二维电子气。 制造该器件的方法包括以下步骤：在半绝缘GaAs衬底上形成未掺杂的GaAs沟道层; 形成N型AlGaAs电子供给层以形成异质结; 形成N型GaAs层; 形成AlGaAs层; 选择性地蚀刻AlGaAs层以形成凹陷; 使用蚀刻剂进行蚀刻处理，其可以快速蚀刻GaAs并缓慢蚀刻AlGaAs以同时形成用于增强型晶体管和耗尽型晶体管的栅电极的沟槽，凹槽的底部在N型AlGaAs层中，以及 底部之间的距离等于AlGaAs层的厚度; 并且同时在沟槽中形成栅电极。

公开(公告)号：US4663572A

公开(公告)日：1987-05-05

申请号：US543621

申请日：1983-10-20

申请人： Sumio Yamamoto

发明人： Sumio Yamamoto

IPC分类号： H01J9/02 ,  H01J9/44 ,  H01J29/52 ,  H01J29/74

CPC分类号： H01J9/445 ,  H01J9/44

摘要： By application of a predetermined period of relatively higher magnitude of electron beam emission from the cathode of the electron gun to the anode maintained at high voltage the potential gradient on the inside of the neck portion of a cathode ray tube is stabilized and the phenomenon of electron beam drift is thus suppressed effectively.

摘要翻译： 通过施加从电子枪的阴极到保持在高电压的阳极的相对较大幅度的电子束发射的预定时间段，阴极射线管颈部的内部的电位梯度被稳定，并且电子 因此能够有效地抑制光束漂移。

公开(公告)号：US4443704A

公开(公告)日：1984-04-17

申请号：US387678

申请日：1982-06-11

申请人： Yoshimi Yamashita ,  Sumio Yamamoto

发明人： Yoshimi Yamashita ,  Sumio Yamamoto

IPC分类号： H01L21/027 ,  G03F7/207 ,  H01J37/304 ,  H01L21/30 ,  H01L23/544 ,  G01N21/00 ,  G01N23/00

CPC分类号： H01J37/304 ,  H01L21/30 ,  H01L23/544 ,  H01L2223/54473 ,  H01L2924/0002

摘要： A method of electron beam exposure in which a plurality of sets of reference values for setting the conditions for electron beam exposure are found in relation to a plurality of sizing marks which are successively arrayed at positions in the vicinity of the pattern area of a specimen, and the exposure condition values corresponding to registration marks on the surface of the specimen are derived from these said reference values for setting the exposure conditions.

摘要翻译： 一种电子束曝光方法，其中发现用于设定电子束曝光条件的多组参考值与在样本图案区域附近的位置连续排列的多个施胶标记相关， 并且从这些用于设定曝光条件的参考值导出与样本表面上的对准标记对应的曝光条件值。