公开(公告)号：US06232847B1

公开(公告)日：2001-05-15

申请号：US09086181

申请日：1998-05-28

申请人： Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  James L. Bartlett ,  Mau Chung F. Chang ,  Deepak Mehrotra ,  J. L. Julian Tham

发明人： Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  James L. Bartlett ,  Mau Chung F. Chang ,  Deepak Mehrotra ,  J. L. Julian Tham

IPC分类号： H03J320

CPC分类号： H01H59/0009 ,  H01G5/18 ,  H01H2001/0084 ,  H03B2201/0208 ,  H03B2201/0216 ,  H03B2201/025 ,  H03J2200/10

摘要： A high-Q precision integrated reversibly trimmable singleband oscillator and tunable multiband oscillator are presented that overcome the problems laser trimming and solid state switches. This is accomplished using micro-electromechanical system (MEMS) technology to integrate an amplifier and its tunable LC network on a common substrate. The LC network can be configured to provide a very narrow bandwidth frequency response which peaks at one or more very specific predetermined frequencies without de-Qing the oscillator.

摘要翻译： 提出了高Q精密集成可逆微调单频振荡器和可调谐多频振荡器，克服了激光微调和固态开关的问题。 这是通过使用微机电系统（MEMS）技术来实现的，以将放大器及其可调谐LC网络集成在公共基板上。 LC网络可以被配置为提供非常窄的带宽频率响应，其在一个或多个非常特定的预定频率处达到峰值，而没有去清振荡器。

公开(公告)号：US5872489A

公开(公告)日：1999-02-16

申请号：US848137

申请日：1997-04-28

申请人： Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  James L. Bartlett ,  J. L. Julian Tham

发明人： Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  James L. Bartlett ,  J. L. Julian Tham

IPC分类号： B81C3/00 ,  H01H59/00 ,  H01L27/06 ,  H03B1/00 ,  H03B5/12 ,  H03F1/26 ,  H03F1/56 ,  H03B5/08 ,  H03F3/04 ,  H03J5/24

CPC分类号： H03F1/565 ,  H01L27/0611 ,  H03B5/1256 ,  H03F1/26 ,  H03F3/195 ,  H01H59/0009 ,  H03B2201/012 ,  H03B2201/0208 ,  H03B2201/0216 ,  H03B2201/025 ,  H03F2200/294 ,  H03F2200/372 ,  H03J2200/10 ,  H03J2200/15

摘要： An integrated, tunable inductance network features a number of fixed inductors fabricated on a common substrate along with a switching network made up of a number of micro-electromechanical (MEM) switches. The switches selectably interconnect the inductors to form an inductance network having a particular inductance value, which can be set with a high degree of precision when the inductors are configured appropriately. The preferred MEM switches introduce a very small amount of resistance, and the inductance network can thus have a high Q. The MEM switches and inductors can be integrated using common processing steps, reducing parasitic capacitance problems associated with wire bonds and prior art switches, increasing reliability, and reducing the space, weight and power requirements of prior art designs. The precisely tunable high-Q inductance network has wide applicability, such as in a resonant circuit which provides a narrow bandwidth frequency response which peaks at a specific predetermined frequency, making possible a highly selective performance low noise amplifier (LNA), or in an oscillator circuit so that a precise frequency of oscillation can be generated and changed as needed.

摘要翻译： 集成的可调电感网络具有在由公共基板上制造的多个固定电感器以及由多个微机电（MEM）开关组成的开关网络。 开关可选地互连电感器以形成具有特定电感值的电感网络，当电感器被适当地配置时，可以以高精度设置电感网络。 优选的MEM开关引入非常少量的电阻，因此电感网络可以具有高Q.MEM开关和电感器可以使用常规的处理步骤进行集成，减少与引线键合和现有技术开关相关联的寄生电容问题，增加 可靠性，并减少现有技术设计的空间，重量和功率要求。 精确可调谐的高Q电感网络具有广泛的适用性，例如在谐振电路中，其提供以特定预定频率峰值的窄带宽频率响应，使高选择性性能低噪声放大器（LNA）或振荡器 使得可以根据需要产生和改变振荡的精确频率。

公开(公告)号：US06232841B1

公开(公告)日：2001-05-15

申请号：US09346097

申请日：1999-07-01

申请人： James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  Deepak Mehrotra ,  J. L. Julian Tham

发明人： James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  Deepak Mehrotra ,  J. L. Julian Tham

IPC分类号： H03F304

CPC分类号： H03F3/2176 ,  H01H59/0009

摘要： Power amplifiers having reactive networks (such as classes C, C-E, E and F) employ tunable reactive devices in their reactive networks, with the reactive devices respective reactance values capable of being adjusted by means of respective control signals. The tunable reactive devices are made from micro-electromechanical (MEM) devices capable of being integrated with the control circuitry needed to produce the control signals and other amplifier components on a common substrate. The reactive components have high Q values across their adjustment range, enabling the amplifier to produce an output with a low harmonic content over a wide range of input signal frequencies, and a frequency agile, high quality output. The invention can be realized on a number of foundry technologies.

摘要翻译： 具有无功网络（例如类C，C-E，E和F）的功率放大器在其无功网络中采用可调谐无功装置，其中无功装置可以通过相应的控制信号来调整各自的电抗值。 可调谐无功装置由能够与在公共基板上产生控制信号和其它放大器部件所需的控制电路集成的微机电（MEM）器件制成。 无功分量在其调节范围内具有高Q值，使得放大器能够在宽范围的输入信号频率以及频率灵敏，高质量输出下产生具有低谐波含量的输出。 本发明可以通过多种铸造技术实现。

公开(公告)号：US5834975A

公开(公告)日：1998-11-10

申请号：US815694

申请日：1997-03-12

申请人： James L. Bartlett ,  Mau Chung F. Chang ,  J. Aiden Higgins ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  J. L. Julian Tham ,  Jun J. Yao

发明人： James L. Bartlett ,  Mau Chung F. Chang ,  J. Aiden Higgins ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  J. L. Julian Tham ,  Jun J. Yao

IPC分类号： H03G1/00 ,  H03G3/30 ,  H03F3/68

CPC分类号： H03F3/72 ,  H03F1/0277 ,  H03F3/211 ,  H03G1/0088

摘要： An integrated, variable gain microwave frequency power amplifier comprises a number of individual amplifier stages which contain microwave frequency active devices. Each stage is fed with a common input signal, and the individual stage outputs are connected to respective micro-electromechanical (MEM) switches which, when closed, connect the individual outputs together to form the power amplifier's output. The power amplifier's gain is determined by the number of outputs connected together. The preferred switch provides low insertion loss and excellent electrical isolation, enabling a number of amplifier stages to be efficiently interconnected to provide a wide dynamic range power amplifier. The switches are preferably integrated on a common substrate with the active devices, eliminating the need for wire bonds and reducing parasitic capacitances. A variable impedance network comprising a number of impedance matching networks selected using MEM switches can be connected to and integrated with a variable gain power amplifier to provide impedance matching that is appropriate for each of the power amplifier's possible output power levels.

摘要翻译： 集成的可变增益微波频率功率放大器包括多个单独的放大器级，其包含微波频率有源器件。 每个级馈入一个公共输入信号，并且各个级输出连接到相应的微机电（MEM）开关，当关闭时，各个输出端连接在一起形成功率放大器的输出。 功率放大器的增益取决于连接在一起的输出数量。 优选的开关提供低插入损耗和优异的电隔离，使得能够高效地互连多个放大器级，以提供宽动态范围功率放大器。 这些开关优选地与有源器件集成在公共衬底上，消除了对引线键合的需要并降低寄生电容。 包括使用MEM开关选择的多个阻抗匹配网络的可变阻抗网络可以连接到可变增益功率放大器并与可变增益功率放大器集成，以提供适合于每个功率放大器的可能输出功率电平的阻抗匹配。

公开(公告)号：US6094102A

公开(公告)日：2000-07-25

申请号：US302535

申请日：1999-04-30

申请人： Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  James L. Bartlett ,  J. L. Julian Tham ,  Deepak Mehrotra

发明人： Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  James L. Bartlett ,  J. L. Julian Tham ,  Deepak Mehrotra

IPC分类号： B81B3/00 ,  H03L7/089 ,  H03L7/093 ,  H03L7/107 ,  H03L7/18 ,  H03D3/00

CPC分类号： H03L7/107 ,  H03L7/0891 ,  H03L7/093 ,  H03L7/18

摘要： A frequency stabilizer circuit in the form of a charge-pump phase-lock loop utilizing a MEMS capacitance device, preferably a tunable MEMS capacitor or a MEMS capacitor bank, which more rapid and with a greater precision determine the phase and frequency of a carrier signal so that it can be extracted, providing an information signal of interest. Such MEMS devices have the added advantage of providing linear capacitance, low insertion losses, higher isolation and high reliability, they run on low power and permit the entire circuit to be fabricated on a common substrate. The use of the MEMS capacitance device reduces unwanted harmonics generated by the circuit's charge pump allowing the filtering requirements to be relaxed or perhaps eliminated.

摘要翻译： 采用MEMS电容器件，优选可调MEMS电容器或MEMS电容器组的电荷泵锁相环形式的频率稳定器电路，其更快速且更精确地确定载波信号的相位和频率 从而可以提取它，从而提供感兴趣的信息信号。 这样的MEMS器件具有提供线性电容，低插入损耗，更高隔离度和高可靠性的附加优点，它们以低功率运行，并允许整个电路在公共衬底上制造。 使用MEMS电容器件减少了由电路的电荷泵产生的不需要的谐波，从而可以放宽或可能消除滤波要求。

公开(公告)号：US6049702A

公开(公告)日：2000-04-11

申请号：US985383

申请日：1997-12-04

申请人： J. L. Julian Tham ,  Deepak Mehrotra ,  James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao

发明人： J. L. Julian Tham ,  Deepak Mehrotra ,  James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao

IPC分类号： H01H59/00 ,  H03H9/46 ,  H04B1/08 ,  H04B1/20 ,  H04B1/38 ,  H04B1/44

CPC分类号： H03H9/462 ,  H04B1/082 ,  H01H59/0009 ,  H01L2924/19011 ,  H03J2200/10 ,  H03J2200/15 ,  H04B1/20 ,  H04B1/3805 ,  H04B1/3822 ,  H04B1/3877

摘要： The passive components of a transceiver, such as transmit/receive switches, antennas, inductors, capacitors and resonators, are integrated together on a common substrate to form an integrated passive transceiver section, which, in combination with other components, provides a highly reliable, low-cost, high-performance transceiver. Micro-electromechanical (MEM) device fabrication techniques are used to provide low-loss, high-performance switches and low-loss, high-Q reactive components, and enable the passive transceiver section's high level of integration. The passive components are preferably integrated on a low-cost glass substrate, with transceiver circuits containing active components fabricated on a separate substrate; the separate substrates are interconnected to implement the RF/analog and analog/digital interface portions of a transceiver. Additional MEM switching devices permit multiple, parallel signal paths to be switched in and out of the transceiver circuitry as needed to optimize performance.

摘要翻译： 诸如发射/接收开关，天线，电感器，电容器和谐振器之类的收发器的无源部件被集成在共同的基板上，以形成集成的无源收发器部分，其与其他部件组合提供高可靠性， 低成本，高性能收发器。 微机电（MEM）器件制造技术用于提供低损耗，高性能开关和低损耗，高Q无功元件，并使无源收发器部分的高集成度。 无源部件优选地集成在低成本玻璃基板上，收发器电路包含在单独基板上制造的有源部件; 单独的基板被互连以实现收发器的RF /模拟/数字接口部分。 附加的MEM切换装置允许多个并行信号路径根据需要被切换进入收发器电路并且从收发器电路中切出以优化性能。

公开(公告)号：US5880921A

公开(公告)日：1999-03-09

申请号：US848116

申请日：1997-04-28

申请人： J.L. Julian Tham ,  James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao

发明人： J.L. Julian Tham ,  James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao

IPC分类号： H01H59/00 ,  H03B1/00 ,  H01G23/00

CPC分类号： H01H59/0009 ,  H01G5/16 ,  H01H2001/0084 ,  H03B2201/0208 ,  H03B2201/0216 ,  H03B2201/025 ,  H03J2200/10

摘要： A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch. The MEMS switch is actuated by applying a voltage to the top electrode, which produces an electrostatic force that attracts the control capacitor structure toward the ground line, thereby causing the electrical contact to close the gap in the signal line and connect the MEMS capacitor structure between a pair of output terminals. The integrated MEMS switch-capacitor pairs have a large range between their on-state and off-state impedance, and thus exhibit superior isolation and insertion loss characteristics.

摘要翻译： 使用MEMS技术的单片集成开关电容器组，其能够处理RF和毫米波段中的GHz信号频率，同时在宽调谐范围内保持电容器电平的精确数字选择。 每个MEMS开关包括悬臂，其固定在基板上并在接地线和间隙信号线上延伸。 在位于信号线上方并面向信号线的间隙的悬臂的底部上形成电接触。 在悬臂上方的顶部电极在地线上方形成控制电容器结构。 电容器结构，优选地悬置在基板上方的悬臂上方与悬臂大致相同高度的MEMS电容器被锚定到基板并与MEMS开关串联连接。 通过向顶部电极施加电压来致动MEMS开关，该电压产生吸引控制电容器结构朝向接地线的静电力，从而使电接触闭合信号线中的间隙，并将MEMS电容器结构 一对输出端子。 集成的MEMS开关电容器对在其导通状态和截止状态阻抗之间具有较大的范围，因此表现出优异的隔离和插入损耗特性。

公开(公告)号：US5959516A

公开(公告)日：1999-09-28

申请号：US4679

申请日：1998-01-08

申请人： Mau Chung F. Chang ,  Henry O. Marcy, 5.sup.th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  Sangtae Park ,  J. L. Julian Tham ,  Deepak Mehrotra ,  James L. Bartlett

发明人： Mau Chung F. Chang ,  Henry O. Marcy, 5.sup.th ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao ,  Sangtae Park ,  J. L. Julian Tham ,  Deepak Mehrotra ,  James L. Bartlett

IPC分类号： B81B3/00 ,  H03B1/00 ,  H03J3/20

CPC分类号： H03J3/20 ,  H01G5/40 ,  H03B2201/0208 ,  H03B2201/0216 ,  H03B2201/025 ,  H03J2200/10

摘要： A high Q MEMS capacitor that can be continuously tuned with a large tuning ratio or reversibly trimmed using an electrostatic force. The tunable capacitor has a master/slave structure in which a control voltage is applied to the master (control) capacitor to set the capacitance of the slave (signal) capacitor to which an RF signal is applied via a suspended mechanical coupler. The master-slave structure reduces tuning error by reducing the signal capacitor's surface area and increasing its spring constant, and may eliminate the need for discrete blocking inductors by electrically isolating the control and signal capacitors. The trimmable capacitor provides an electrostatic actuator that selectively engages a stopper with teeth on a tunable capacitor structure to fix the trimmed capacitance.

摘要翻译： 高Q MEMS电容器，可以使用大的调谐率连续调谐或使用静电力可逆地修整。 可调谐电容器具有主/从结构，其中控制电压施加到主（控制）电容器以通过悬挂的机械耦合器设置施加RF信号的从（信号）电容器的电容。 主从结构通过减少信号电容器的表面积和增加其弹簧常数来减少调谐误差，并且可以通过电隔离控制和信号电容器来消除对离散阻塞电感器的需要。 可调节电容器提供静电致动器，其选择性地将阻塞器与可调谐电容器结构上的齿接合以固定修整的电容。

公开(公告)号：US5449903A

公开(公告)日：1995-09-12

申请号：US76906

申请日：1993-06-15

申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

IPC分类号： G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00 ,  G21K5/10

CPC分类号： H02N1/008 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  Y10S977/874

摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.

摘要翻译： 自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。 一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。 每个梁中的弹簧装置允许梁的轴向运动。 尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

公开(公告)号：US5287082A

公开(公告)日：1994-02-15

申请号：US906877

申请日：1992-07-02

申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

IPC分类号： H01L21/02 ,  H01C1/012

CPC分类号： H01L28/20

摘要： A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.

摘要翻译： 具有可忽略的寄生电容（40），（42），（44）的亚微米电阻器包括承载在单晶硅晶片上的隔离放电光束（20）。 通过在衬底（24）中限定电阻器区域，掺杂该区域以产生期望的电阻率，以及围绕该区域蚀刻以产生电阻岛，来制造电阻器。 然后通过氧化将岛与基底隔离，并通过去除氧化物来产生隔离的释放的束（20）。