Semiconductor memory device
    1.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5475692A

    公开(公告)日:1995-12-12

    申请号:US407986

    申请日:1995-03-22

    CPC分类号: G11C29/40 G11C29/10 G11C29/14

    摘要: Herein disclosed is a semiconductor integrated circuit for testing test data of two kinds of non-inverted and inverted statuses of all bits by itself with a prospective data of one kind to compress and output the test results. The semiconductor integrated circuit includes a decide circuit 25 for deciding a first status, in which the prospective data latched by a pattern register and the read data of a memory cell array are coincident, a second status, in which the read data is coincident with the logically inverted data of the prospective data, and a third statuses other than the first and second statuses through an exclusive OR gate to generate signals of 2 bits capable of discriminating the individual statuses. These statuses are informed to the outside of the semiconductor integrated circuit in accordance with high- and low-levels and a high-impedance.

    摘要翻译: 这里公开了一种半导体集成电路,用于测试所有位的两种非反相和反相状态的测试数据,其中一种预期数据可以压缩并输出测试结果。 半导体集成电路包括:决定电路25,用于决定第一状态,其中由模式寄存器锁存的预期数据和存储单元阵列的读取数据一致;第二状态,读取数据与 逻辑反转的预期数据的数据,以及通过异或门以外的第一状态和第二状态的第三状态,以产生能够区分各个状态的2位的信号。 这些状态根据高低电平和高阻抗通知到半导体集成电路的外部。