公开(公告)号：US20210028354A1

公开(公告)日：2021-01-28

申请号：US17000481

申请日：2020-08-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L45/00 ,  G11B5/39

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20190103552A1

公开(公告)日：2019-04-04

申请号：US16083202

申请日：2017-10-27

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Minoru OTA ,  Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: H01L43/10 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

公开(公告)号：US20210151667A1

公开(公告)日：2021-05-20

申请号：US16952274

申请日：2020-11-19

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Minoru OTA ,  Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  G11C13/00 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

公开(公告)号：US20140339961A1

公开(公告)日：2014-11-20

申请号：US13898110

申请日：2013-05-20

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA

IPC: H01L41/08 ,  H01L41/187

CPC classification number: H01L41/0805 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2202/03 ,  G01C19/5621 ,  G01C19/5628 ,  G01L9/008 ,  G11B5/483 ,  G11B5/5552 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A1, A2, and A3 of the respective regions are determined, a ratio m/M of the smallest average crystal grain size m among A1, A2, and A3 to the largest average crystal grain size M among A1, A2, and A3 is 10% to 80%. The region having the smallest average crystal grain size m lies next to one of the pair of electrode films.

Abstract translation: 根据本发明的薄膜压电元件包括​​具有多个晶粒在膜厚度方向上存在的结构的铌酸钾钠薄膜; 和一对夹着铌酸钾钠薄膜的电极膜。 当铌酸钾薄膜在膜厚度方向上分为相同厚度的三个区域并确定各个区域的平均晶粒尺寸A1，A2和A3时，最小平均晶粒的比率m / M A1，A2和A3之间的尺寸m为A1，A2和A3之间的最大平均晶粒尺寸M为10％至80％。 具有最小平均晶粒尺寸m的区域紧邻该对电极膜中的一个。

公开(公告)号：US20140265724A1

公开(公告)日：2014-09-18

申请号：US13827364

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Hitoshi SAKUMA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Ta (tantalum) is substituted on both of an A site and a B site. Accordingly, the piezoelectric element is provided to increase a reliability of the piezoelectric element using the thin film of potassium sodium niobate and to improve piezoelectric characteristics thereof.

Abstract translation: 作为压电元件，压电元件包括​​作为A（A）部位和B部位的Ta（钽）被替代的通式ABO3表示的钙钛矿型化合物钠铌酸钾的薄膜。 因此，提供压电元件以增加使用铌酸钾钠薄膜的压电元件的可靠性，并提高压电元件的压电特性。

公开(公告)号：US20200052194A1

公开(公告)日：2020-02-13

申请号：US16587178

申请日：2019-09-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  G11B5/39 ,  H01L45/00 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20190333966A1

公开(公告)日：2019-10-31

申请号：US16080971

申请日：2017-10-16

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: H01L27/22 ,  H01F10/32 ,  G11C11/16 ,  H01L23/522 ,  H01L43/02 ,  H01L43/12 ,  H01F41/34 ,  H01L23/528

Abstract: A TMR element includes a base layer that is disposed on an upper surface of a via interconnect part, a magnetic tunnel junction that is disposed on a surface of the base layer, and an interlayer insulation layer that covers a side surface of each of the via interconnect part and the base layer. The base layer includes a stress relieving region. The magnetic tunnel junction includes a reference layer having a magnetization fixed direction, a magnetization free layer, and a tunnel barrier layer disposed between the reference layer and the magnetization free layer. The interlayer insulation layer includes an insulation material.

公开(公告)号：US20180083186A1

公开(公告)日：2018-03-22

申请号：US15559195

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11B5/39 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L45/147

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20240145146A1

公开(公告)日：2024-05-02

申请号：US18498337

申请日：2023-10-31

Applicant: TDK CORPORATION

Inventor： Mutsuko NAKANO ,  Yasuhisa OKANO ,  Takao NOGUCHI ,  Wakako OKAWA ,  Yoshitomo TANAKA

IPC: H01F10/13 ,  H10N35/80

CPC classification number: H01F10/136 ,  H10N35/80

Abstract: A magnetostrictive film includes rich regions having a mesh pattern in a cross section perpendicular to a film thickness direction of the magnetostrictive film. The rich regions are richer in a specific element contributing to ferromagnetism than surroundings of the rich regions.

公开(公告)号：US20190154767A1

公开(公告)日：2019-05-23

申请号：US16099628

申请日：2018-02-27

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yoshitomo TANAKA

IPC: G01R33/09 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

Abstract: A ferromagnetic multilayer film includes first and second magnetization fixed layers, first and second interposed layers, and a magnetic coupling layer. The magnetization fixed layers are antiferromagnetically coupled by exchange coupling via the interposed layers and the magnetic coupling layer. A main element of the magnetic coupling layer is Ru, Rh, or Ir. A main element of the first interposed layer is the same as that of the magnetic coupling layer. A main element of the second interposed layer is different from that of the magnetic coupling layer. A thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of the main element of the first interposed layer. A thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.