公开(公告)号：US20150132967A1

公开(公告)日：2015-05-14

申请号：US14529241

申请日：2014-10-31

Applicant: Tokyo Electron Limited

Inventor： Masafumi URAKAWA ,  Rui TAKAHASHI ,  Masahiro OGASAWARA

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract translation: 一种使用具有静电卡盘的基板处理装置的基板处理装置的方法，所述基板处理装置包括绝缘构件，所述绝缘构件包括电极并且向安装在所述静电卡盘上的基板提供等离子体处理，所述第一工序提供具有 使用具有第一气体压力的处理气体的等离子体消除基板中的电荷的第二气体压力到基板的背面。

公开(公告)号：US20150235862A1

公开(公告)日：2015-08-20

申请号：US14623006

申请日：2015-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rui TAKAHASHI ,  Ryuuu ISHITA ,  Kazuki NARISHIGE

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/32136 ,  H01J37/32091 ,  H01J37/32165 ,  H01J2237/334 ,  H01L21/02123 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32137 ,  H01L21/32139 ,  H01L27/11582

Abstract: A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.

Abstract translation: 提供了使用掩模蚀刻多层膜的半导体器件制造方法。 该方法包括（a）向处理室供应含有氢，溴化氢，三氟化氮和至少一种烃，碳氟化合物和氟代烃的第一气体，并激发第一气体以从多层膜的顶表面上蚀刻多层膜 到所述多层膜的堆叠方向的预定位置; 和（b）提供基本不含有溴化氢并且含有氢和三氟化氮的第二气体和至少一种氢化三氟化碳，碳氟化合物和氟代烃，并且激发第二气体以从第二气体的预定位置 该多层膜到达蚀刻停止层的顶表面。