公开(公告)号：US20240274412A1

公开(公告)日：2024-08-15

申请号：US18641911

申请日：2024-04-22

Applicant: Tokyo Electron Limited

Inventor： Shinsuke OKA ,  Akira TAKAHASHI ,  Daisuke TAMURA ,  Tsubasa SHIMOMURA

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32183 ,  H01J2237/2007

Abstract: With respect to a method of reducing leakage of a heat transfer gas, the method includes mounting an edge ring on a main body including an electrostatic chuck; attracting the edge ring to the electrostatic chuck; increasing a temperature of the edge ring; decreasing the temperature of the edge ring; and repeating the increasing of the temperature and the decreasing of the temperature a plurality of times.

公开(公告)号：US20150179466A1

公开(公告)日：2015-06-25

申请号：US14574565

申请日：2014-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru TAKAYAMA ,  Shoichiro MATSUYAMA ,  Susumu NOGAMI ,  Daisuke TAMURA ,  Kyosuke HAYASHI ,  Jun KAWANOBE

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括提供一种待处理对象，其包括通过在等离子体处理装置的处理容器内交替层叠具有不同介电系数的第一膜和第二膜而形成的多层膜; 并且重复地执行包括：向所述处理容器供应包括O 2气体或N 2气体的第一气体和稀有气体，并且激发所述第一气体，将包括碳氟化合物气体或氟代烃气体的第二气体供应到所述处理容器中并激发 第二气体，并且将包括HBr气体，含氟气体，氟碳化合物气体或氟代烃气体的第三气体供给到处理容器中并激发第三气体，从而通过掩模蚀刻多层膜。

公开(公告)号：US20160293440A1

公开(公告)日：2016-10-06

申请号：US15090726

申请日：2016-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu NAGATOMO ,  Ryuuu ISHITA ,  Daisuke TAMURA ,  Kousuke KOIWA

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/31 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/31144 ,  H01L21/67109 ,  H01L27/115 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

Abstract: Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by alternately laminating a silicon oxide film and a silicon nitride film and a second region has a silicon oxide film having a film thickness that is larger than that of the silicon oxide film in the first region. A mask is provided on the workpiece to at least partially expose each of the first and second regions. In the etching method, plasma of a first processing gas containing fluorocarbon gas, hydrofluorocarbon gas, and oxygen gas is generated within a processing container of a plasma processing apparatus. Subsequently, plasma of a second processing gas containing fluorocarbon gas, hydrofluorocarbon gas, oxygen gas, and a halogen-containing gas is generated within the processing container. Subsequently, plasma of a third processing gas containing oxygen gas is generated within the processing container.

Abstract translation: 提供了一种用于同时蚀刻工件的第一和第二区域的蚀刻方法。 第一区域具有通过交替层叠氧化硅膜和氮化硅膜而构成的多层膜，第二区域具有比第一区域中的氧化硅膜的膜厚大的氧化硅膜。 在工件上设置掩模以至少部分地暴露第一和第二区域中的每一个。 在蚀刻方法中，在等离子体处理装置的处理容器内产生含有碳氟化合物气体，氢氟烃气体和氧气的第一处理气体的等离子体。 随后，在处理容器内产生含有碳氟化合物气体，氢氟烃气体，氧气和含卤素气体的第二处理气体的等离子体。 随后，在处理容器内产生含有氧气的第三处理气体的等离子体。