公开(公告)号：US20230295797A1

公开(公告)日：2023-09-21

申请号：US18042833

申请日：2021-08-12

申请人： Tokyo Electron Limited

发明人： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Takayuki KOMIYA ,  Satoru KAWAKAMI ,  Taro IKEDA ,  Toshihiko IWAO

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52

CPC分类号： C23C16/345 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/509 ,  C23C16/52

摘要： A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

公开(公告)号：US20240274433A1

公开(公告)日：2024-08-15

申请号：US18456642

申请日：2023-08-28

申请人： Tokyo Electron Limited

发明人： Tsuyoshi TSUNATORI ,  Takayuki KOMIYA

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02274 ,  H01J2237/332

摘要： A substrate processing method of embedding a silicon nitride film in a recess formed in a surface of a substrate, includes repeating a cycle, the cycle including: a first operation of supplying a silicon precursor to form an adsorption layer of the silicon precursor on the substrate; a second operation of supplying a first nitrogen-containing gas and supplying a first power to an upper electrode to generate a first plasma, and exposing the substrate to the first plasma to nitride the adsorption layer and form the silicon nitride film; and a third operation of supplying a second nitrogen-containing gas and supplying a second power to a lower electrode to generate a second plasma different from the first plasma, and exposing the substrate to the second plasma to modify an upper portion of the recess and form an adsorption-inhibiting area.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

申请人： TOKYO ELECTRON LIMITED

发明人： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC分类号： H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

摘要： There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

公开(公告)号：US20140174363A1

公开(公告)日：2014-06-26

申请号：US14170694

申请日：2014-02-03

申请人： TOKYO ELECTRON LIMITED

发明人： Takayuki KOMIYA

IPC分类号： H01L21/02

CPC分类号： H01L21/02104 ,  C23C16/06 ,  C23C16/38 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/45502 ,  C23C16/466 ,  C23C16/52

摘要： A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material container in which solid M(BH4)4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H2 gas and M(BH4)4 gas having a volume ratio of flow rates (H2/M(BH4)4) of 2 or more into the processing container, and deposit a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.

摘要翻译： 一种形成膜的方法包括以下步骤：将待处理物体放置在处理容器中; 并通过将H 2气体作为载体气体输送到容纳固体M（BH4）4（其中M为Zr或Hf）的原料容器中以产生M（BH4）4气体，以引入H 2气体和M（BH 4） ）4个具有2个或更多流体积比（H2 / M（BH4）4）的气体）进入处理容器，并将MBx膜（其中M为Zr或Hf，x为1.8至2.5）沉积在物体上 使用热CVD。