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公开(公告)号：US11700778B2
公开(公告)日：2023-07-11
申请号：US17226495
申请日：2021-04-09
发明人： Steven Consiglio , Cory Wajda , Kandabara Tapily , Takaaki Tsunomura , Takashi Ando , Paul C. Jamison , Eduard A. Cartier , Vijay Narayanan , Marinus J. P. Hopstaken
CPC分类号： H10N70/023 , H10B63/00 , H10N70/8833
摘要： A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.
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公开(公告)号：US10991881B2
公开(公告)日：2021-04-27
申请号：US16428554
申请日：2019-05-31
发明人： Steven Consiglio , Cory Wajda , Kandabara Tapily , Takaaki Tsunomura , Takashi Ando , Paul C. Jamison , Eduard A. Cartier , Vijay Narayanan , Marinus J. P. Hopstaken
摘要： A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.
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公开(公告)号：US20210234096A1
公开(公告)日：2021-07-29
申请号：US17226495
申请日：2021-04-09
发明人： Steven Consiglio , Cory Wajda , Kandabara Tapily , Takaaki Tsunomura , Takashi Ando , Paul C. Jamison , Eduard A. Cartier , Vijay Narayanan , Marinus J.P. Hopstaken
摘要： A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.
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公开(公告)号：US20200381624A1
公开(公告)日：2020-12-03
申请号：US16428554
申请日：2019-05-31
发明人： Steven Consiglio , Cory Wajda , Kandabara Tapily , Takaaki Tsunomura , Takashi Ando , Paul C. Jamison , Eduard A. Cartier , Vijay Narayanan , Marinus J.P. Hopstaken
摘要： A method of controlling the forming voltage of a dielectric film in a resistive random access memory (ReRAM) device. The method includes depositing a dielectric film contains intrinsic defects on a substrate, forming a plasma-excited treatment gas containing H2 gas, and exposing the dielectric film to the plasma-excited treatment gas to create additional defects in the dielectric film without substantially changing a physical thickness of the dielectric film, where the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film. The dielectric film can include a metal oxide film and the plasma-excited treatment gas may be formed using a microwave plasma source.
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5.发明授权公开(公告)号：US10833150B2
公开(公告)日：2020-11-10
申请号：US16032632
申请日：2018-07-11
发明人： Martin M. Frank , Kam-Leung Lee , Eduard A. Cartier , Vijay Narayanan , Jean Fompeyrine , Stefan Abel , Oleg Gluschenkov , Hemanth Jagannathan
摘要： A method for converting a dielectric material including a type IV transition metal into a crystalline material that includes forming a predominantly non-crystalline dielectric material including the type IV transition metal on a supporting substrate as a component of an electrical device having a scale of microscale or less; and converting the predominantly non-crystalline dielectric material including the type IV transition metal to a crystalline crystal structure by exposure to energy for durations of less than 100 milliseconds and, in some instances, less than 10 microseconds. The resultant material is fully or partially crystallized and contains a metastable ferroelectric phase such as the polar orthorhombic phase of space group Pca21 or Pmn21. During the conversion to the crystalline crystal structure, adjacently positioned components of the electrical devices are not damaged.
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公开(公告)号：US10361281B2
公开(公告)日：2019-07-23
申请号：US15911892
申请日：2018-03-05
发明人： Takashi Ando , Eduard A. Cartier , Kisik Choi , Vijay Narayanan
IPC分类号： H01L21/02 , H01L21/28 , H01L29/66 , H01L21/321 , H01L21/324 , H01L29/423 , H01L21/3205
摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
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7.发明授权公开(公告)号：US10211064B2
公开(公告)日：2019-02-19
申请号：US15176982
申请日：2016-06-08
IPC分类号： H01L27/11521 , H01L29/51 , H01L21/3115 , H01L29/49 , H01L21/8234 , H01L21/28 , H01L29/66 , H01L29/792 , G11C16/04 , H01L27/11568
摘要： A metal oxide semiconductor field effect transistors (MOSFET) memory array, including a complementary metal oxide semiconductor (CMOS) cell including an n-type MOSFET having a modified gate dielectric; and an n-type or p-type MOSFET having an unmodified gate dielectric layer, where the modified gate dielectric layer incorporates an oxygen scavenging species.
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公开(公告)号：US20180197972A1
公开(公告)日：2018-07-12
申请号：US15911892
申请日：2018-03-05
发明人： Takashi Ando , Eduard A. Cartier , Kisik Choi , Vijay Narayanan
IPC分类号： H01L29/66 , H01L21/02 , H01L21/3205 , H01L21/324 , H01L21/28 , H01L29/423 , H01L21/321
CPC分类号： H01L29/66795 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/28017 , H01L21/28088 , H01L21/32055 , H01L21/321 , H01L21/324 , H01L29/4232 , H01L29/66 , H01L29/66545 , H01L29/6681
摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
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公开(公告)号：US09960252B2
公开(公告)日：2018-05-01
申请号：US15258597
申请日：2016-09-07
发明人： Takashi Ando , Eduard A. Cartier , Kisik Choi , Vijay Narayanan
IPC分类号： H01L21/3205 , H01L29/66 , H01L21/28 , H01L21/324 , H01L29/423 , H01L21/321 , H01L21/02
CPC分类号： H01L29/66545 , H01L21/02532 , H01L21/02592 , H01L21/02595 , H01L21/28017 , H01L21/28088 , H01L21/32055 , H01L21/321 , H01L21/324 , H01L29/4232 , H01L29/66 , H01L29/66795 , H01L29/6681
摘要： A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over the area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; depositing a sacrificial layer over the thin metal layer; performing a first rapid thermal anneal; removing the sacrificial layer; and depositing a metal layer of low resistivity metal for gap fill.
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公开(公告)号：US20180006108A1
公开(公告)日：2018-01-04
申请号：US15198800
申请日：2016-06-30
CPC分类号： H01L28/75
摘要： A layered structure including a tri-stack dielectric layer and a plurality of metal layers insulated from each other by the tri-stack dielectric layer. The plurality of metal layers includes a set of first-type metal layers and a set of second-type metal layers. An adjacent pair of the plurality of metal layers includes a first-type metal layer and a second-type metal layer. The tri-stack dielectric layer includes a first tri-stack layer including Al2O3, a second tri-stack layer including HfO2; and a third tri-stack layer including Al2O3.
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