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公开(公告)号：US09954135B2
公开(公告)日：2018-04-24
申请号：US14901778
申请日：2013-07-11
申请人： TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION , KYOTO UNIVERSITY , KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATION
发明人： Takahiro Hiramatsu , Hiroyuki Orita , Takahiro Shirahata , Toshiyuki Kawaharamura , Shizuo Fujita
IPC分类号： H01L31/18 , H01L31/028 , H01L31/0216
CPC分类号： H01L31/1868 , H01L31/0216 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.
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公开(公告)号：US10290762B2
公开(公告)日：2019-05-14
申请号：US15736351
申请日：2015-06-18
申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation , Kochi Prefectural Public University Corporation , Kyoto University
IPC分类号： G01R31/26 , H01L21/66 , H01L31/18 , C23C16/40 , C23C16/455 , H01L31/0216 , C23C16/448
摘要： Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.
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公开(公告)号：US11555245B2
公开(公告)日：2023-01-17
申请号：US15737138
申请日：2015-06-18
申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation , Kyoto University , Kochi Prefectural Public University Corporation
IPC分类号： C23C16/455 , C23C16/44 , C23C14/00 , C23C14/08 , C23C26/00 , C23C16/448 , H01L31/0216 , H01L21/31 , C23C16/40
摘要： In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.
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公开(公告)号：US11732360B2
公开(公告)日：2023-08-22
申请号：US16630959
申请日：2019-02-28
IPC分类号： C23C16/54 , C23C16/56 , B05B9/00 , C23C16/458 , C23C16/02 , C23C16/48 , H01L31/18 , B05D1/02 , B05D3/02 , C23C16/455
CPC分类号： C23C16/4582 , C23C16/0209 , C23C16/482 , C23C16/54 , C23C16/56 , B05B9/00 , B05D1/02 , B05D3/0227 , B05D3/0263 , C23C16/45574 , H01L31/18
摘要： Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.
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公开(公告)号：US20150299854A1
公开(公告)日：2015-10-22
申请号：US14440000
申请日：2012-11-05
IPC分类号： C23C16/455 , C23C16/46 , C23C16/44
CPC分类号： C23C16/455 , B05B1/044 , B05B7/0012 , B05B7/0075 , B05B7/0483 , B05B7/0807 , B05B7/0861 , B05B12/18 , B05B14/00 , B05B15/55 , C23C16/4412 , C23C16/4486 , C23C16/46
摘要： A film forming apparatus includes a spray nozzle, a first chamber, a first gas supply port, a second chamber, a through hole, and a mist outlet. A solution transformed into droplets that is to be sprayed from the spray nozzle is housed in the first chamber and transformed into a mist in the first chamber by gas injected from the first gas supply port. The solution in mist form moves from the first chamber through the through hole to the second chamber and is misted onto a substrate from the mist outlet of the second chamber.
摘要翻译： 成膜装置包括喷嘴，第一室，第一气体供给口，第二室，通孔和雾出口。 转换成从喷嘴喷出的液滴的溶液容纳在第一室中，并且通过从第一气体供给口注入的气体转化为第一室中的雾。 雾状溶液从第一室通过通孔移动到第二室，并从第二室的雾出口被雾化到基板上。
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公开(公告)号：US10458017B2
公开(公告)日：2019-10-29
申请号：US14440000
申请日：2012-11-05
IPC分类号： B05B7/00 , B05B7/04 , C23C16/448 , B05B14/00 , B05B12/18 , B05B15/55 , B05B7/08 , C23C16/455 , C23C16/44 , C23C16/46 , B05B1/04
摘要： A film forming apparatus includes a spray nozzle, a first chamber, a first gas supply port, a second chamber, a through hole, and a mist outlet. A solution transformed into droplets that is to be sprayed from the spray nozzle is housed in the first chamber and transformed into a mist in the first chamber by gas injected from the first gas supply port. The solution in mist form moves from the first chamber through the through hole to the second chamber and is misted onto a substrate from the mist outlet of the second chamber.
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公开(公告)号：US10456802B2
公开(公告)日：2019-10-29
申请号：US14906465
申请日：2013-08-08
摘要： An atomizing apparatus includes a container that accommodates a solution and a mist generator that forms the solution into a mist. An inner hollow structure is located in the container. The atomizing apparatus supplies a carrier gas into a gas supply space. The atomizing apparatus includes a connecting portion formed therein. The connecting portion connects a hollow of the inner hollow structure and the gas supply space.
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公开(公告)号：US11075318B2
公开(公告)日：2021-07-27
申请号：US15305397
申请日：2014-05-22
IPC分类号： H01L31/18 , H01L31/0224
摘要： A method for film-forming a buffer layer to be used for a solar cell, the buffer layer being disposed between a light absorbing layer and a transparent conductive film. Specifically, in this buffer layer film-forming method, a solution is formed into a mist, the solution containing zinc and almuminum as metal raw materials of the buffer layer. Then, a substrate disposed in the atmosphere is heated. Then, the mist of the solution is sprayed to the substrate being heated.
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