公开(公告)号：US06258244B1

公开(公告)日：2001-07-10

申请号：US09076834

申请日：1998-05-13

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： C25D900

CPC分类号： H01L21/3063 ,  C25D11/005 ,  C25D11/32 ,  H01L21/76256

摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.

摘要翻译： 为了有效地除去溶液中的化学反应中副产物的气体分子，以达到溶液中化学反应的高效率，高速率和均匀性，并且为了实现适用于 制造SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应 反应容器中的溶液总是控制在不大于其在反应期间的溶解度。

公开(公告)号：US06255731B1

公开(公告)日：2001-07-03

申请号：US09123364

申请日：1998-07-28

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： H01L2348

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L23/4825 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

摘要翻译： 适用于千兆级集成（GSI）的半导体衬底包括至少其表面由半导体制成的支撑体，导电材料层，绝缘层和按上述顺序排列的半导体层。 导电材料层至少部分地具有通过使两种金属，金属和半导体，金属和金属 - 半导体化合物，半导体和金属 - 半导体化合物或两种金属 - 半导体化合物形成的导电反应层 互相反应。 在反应层和绝缘层或载体之间设置由不与反应层反应的材料制成的导电反应终止层。

公开(公告)号：US06975125B2

公开(公告)日：2005-12-13

申请号：US10842167

申请日：2004-05-10

申请人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

发明人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC分类号： G01B15/00 ,  G01B15/04 ,  G01B15/08 ,  G01N23/225 ,  G01N27/00 ,  G01R31/02 ,  G01R31/305 ,  G01R31/307 ,  G04B15/00 ,  H01J37/20 ,  H01J37/28 ,  H01L21/66

CPC分类号： H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

摘要： In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acceleration voltage, on the one or more contact holes and/or vias. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated at a plurality of acceleration voltages on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current measured for the plurality of acceleration voltages of the electron beam.

摘要翻译： 一方面，本发明是用于获得关于半导体晶片上的一个或多个接触孔和/或通孔的信息的系统和方法。 在这方面，在一个实施例中，该系统包括电子枪，以在一个或多个接触孔和/或通孔上照射具有可变加速电压的电子束。 该系统还包括耦合到半导体晶片的电流测量装置可以测量补偿电流，其中响应于在一个或多个接触孔上以多个加速电压照射的电子束产生补偿电流。 该系统还包括耦合到当前测量装置的数据处理器，以使用针对电子束的多个加速电压测量的补偿电流来确定与一个或多个接触孔和/或通孔有关的信息。

公开(公告)号：US06842663B2

公开(公告)日：2005-01-11

申请号：US10790276

申请日：2004-03-01

申请人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

发明人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC分类号： H01L21/02 ,  H01L21/00 ,  G06F19/99

CPC分类号： H01L21/67276

摘要： A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

摘要翻译： 半导体装置的生产管理系统包括半导体制造中心C，用于制造半导体器件的生产装置11a-11c，用于测量批次数据的在线测量装置12a-12c，存储生产方法数据的数据库2， 测量数据，对应于测量数据的过程步骤的规格，估计产量，批次输入日期和时间的数据，执行处理步骤的预定日期的数据，实际完成日期的数据 在每个步骤和每个批次的半导体器件的预定完成日期的数据中，对应于半导体器件（芯片）的批号数据和包括用于计算估计产量的估计产量操作单元1a的服务器1， 根据规格和测量数据是最终产量，以及用于执行半导体器件的生产管理的生产管理单元1b 由用户根据用户输入的相应数据和估计的收益进行排序，其中用户的用户终端不仅执行每个处理中的处理处理是否正常的确定，还估计 正品由用户订购，最终可以获得。

公开(公告)号：US06683308B2

公开(公告)日：2004-01-27

申请号：US10336766

申请日：2003-01-06

申请人： Yosuke Itagaki ,  Keizo Yamada ,  Takeo Ushiki

发明人： Yosuke Itagaki ,  Keizo Yamada ,  Takeo Ushiki

IPC分类号： G01B1502

CPC分类号： G01B15/02 ,  H01J2237/2815

摘要： A film thickness measuring apparatus applies an electron beam to a thin film as a measurement object formed on a substrate, and measures a value of substrate current that flows in the substrate thereupon. The film thickness measuring apparatus corrects the substrate current value taking into account an influence of a charge distribution generated in the neighborhood of the thin film due to the application of the electron beam or an influence of a configuration of the surface of the substrate in the neighborhood of the thin film. The film thickness measuring apparatus acquires reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples and calculates a thickness of the thin film from the corrected substrate current value taking into account the reference data.

摘要翻译： 膜厚测量装置将电子束作为形成在基板上的测量对象的薄膜施加电子束，并测量在其中流过衬底的衬底电流的值。 考虑到由于施加电子束而导致在薄膜附近产生的电荷分布的影响或者邻近的基板表面的构成的影响，膜厚测量装置校正了衬底电流值 的薄膜。 膜厚测量装置获取表示相对于标准样品的膜厚度和衬底电流值之间的相关性的参考数据，并且从校正的衬底电流值考虑参考数据计算薄膜的厚度。

公开(公告)号：US07321805B2

公开(公告)日：2008-01-22

申请号：US11005330

申请日：2004-12-06

申请人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

发明人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC分类号： G06F19/00

CPC分类号： H01L21/67276

摘要： A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

摘要翻译： 半导体装置的生产管理系统包括在半导体生产中心C中，用于生产半导体器件的生产装置11a-11c，用于测量批次的数据的在线测量装置12a-12c，存储数据的数据库2 的生产方法，测量数据，对应于测量数据的过程步骤的规格，估计产量，批次输入日期和时间的数据，执行处理步骤的预定日期的数据，数据 相应于半导体器件（芯片）的批号数据和包括估计产量操作单元1a的服务器1，每个步骤的实际完成日期和每个批次的半导体器件的预定完成日期的数据， 根据规格和测量数据计算作为最终产量的估计产量，以及用于进行半导体生产管理的生产管理单元1b 用户根据用户输入的各个数据排序的设备和估计的收益，其中，用户的用户终端不仅执行每个处理中的处理处理是否正常，而且还估计最终数 的用户订购的正常产品，最终可以获得。

公开(公告)号：US20060202119A1

公开(公告)日：2006-09-14

申请号：US11198780

申请日：2005-08-05

申请人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

发明人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC分类号： G01N23/00

CPC分类号： H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

摘要： A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

摘要翻译： 公开了一种用于获得关于半导体晶片上的一个或多个接触和/或通孔的信息的系统和方法。 在一个实施例中，该方法获得关于设置在半导体晶片中或设置在设置在半导体晶片上或上方的层中的一个或多个孔（例如，通孔或接触）的信息。 该实施例的方法包括用电子束照射一个或多个孔; 以及使用表示响应于用电子束照射所述一个或多个孔而产生的衬底电流的量的数据来确定与所述一个或多个孔的底部直径或底部圆周有关的信息。

公开(公告)号：US06768324B1

公开(公告)日：2004-07-27

申请号：US09702831

申请日：2000-11-01

申请人： Keizo Yamada ,  Tohru Tsujide ,  Yousuke Itagaki ,  Takeo Ushiki

发明人： Keizo Yamada ,  Tohru Tsujide ,  Yousuke Itagaki ,  Takeo Ushiki

IPC分类号： G01R3102

CPC分类号： H01J37/256 ,  G01R31/307 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/24564

摘要： Current produced in a sample 5 by irradiating the sample with parallel electron beam 2 is measured by an ammeter 9. The measurement is repeated while changing acceleration voltage of electron beam 2. An information related to a structure of the sample 5 in a depth direction thereof is obtained by a data processor 10, on the basis or a difference in transmittivity of electron beam 2 into the sample 5 due to the difference of acceleration voltage.

摘要翻译： 通过用电流计9测量样品5中通过用平行电子束2照射样品产生的电流。在改变电子束2的加速电压的同时重复测量。与样品5的深度方向的结构相关的信息 由数据处理器10基于加速电压的差异而基于电子束2向样品5的透射率的差异而获得。

公开(公告)号：US06711453B2

公开(公告)日：2004-03-23

申请号：US10082247

申请日：2002-02-26

申请人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

发明人： Keizo Yamada ,  Yousuke Itagaki ,  Takeo Ushiki ,  Tohru Tsujide

IPC分类号： G06F1900

CPC分类号： H01L21/67276

摘要： A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on the basis of the respective data inputted by the user and the estimated yield, wherein a user terminal of the user not only performs a determination whether or not the process processing in every process is normal but also estimates the final number of normal products ordered by the user and obtainable finally.

摘要翻译： 半导体装置的生产管理系统包括半导体制造中心C，用于制造半导体器件的生产装置11a-11c，用于测量批次的数据的在线测量装置12a-12c，存储生产方法数据的数据库2， 测量数据，对应于测量数据的过程步骤的规格，估计产量，批次输入日期和时间的数据，执行处理步骤的预定日期的数据，实际完成日期的数据 在每个步骤和每个批次的半导体器件的预定完成日期的数据中，对应于半导体器件（芯片）的批号数据和包括用于计算估计产量的估计产量操作单元1a的服务器1， 根据规格和测量数据是最终产量，以及用于执行半导体器件的生产管理的生产管理单元1b 由用户根据用户输入的相应数据和估计的收益进行排序，其中用户的用户终端不仅执行每个处理中的处理处理是否正常的确定，还估计 正品由用户订购，最终可以获得。

公开(公告)号：US07700380B2

公开(公告)日：2010-04-20

申请号：US11151068

申请日：2005-06-13

申请人： Takeo Ushiki ,  Keizo Yamada ,  Yohsuke Itagaki ,  Tohru Tsujide

发明人： Takeo Ushiki ,  Keizo Yamada ,  Yohsuke Itagaki ,  Tohru Tsujide

IPC分类号： H01L21/66

CPC分类号： G01N21/9501 ,  G21K7/00 ,  H01J2237/24507 ,  H01J2237/24571 ,  H01J2237/24592 ,  H01L21/02063 ,  H01L22/12

摘要： A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.

摘要翻译： 用电子束照射半导体晶片，使得非弹性散射发生在窄区域，电流从窄区域流出; 当前的数量取决于狭窄地区的物质或物质，以便分析人员根据狭义地区规定的物质或物质评估污染程度。