公开(公告)号：US06258244B1

公开(公告)日：2001-07-10

申请号：US09076834

申请日：1998-05-13

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： C25D900

CPC分类号： H01L21/3063 ,  C25D11/005 ,  C25D11/32 ,  H01L21/76256

摘要： In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.

摘要翻译： 为了有效地除去溶液中的化学反应中副产物的气体分子，以达到溶液中化学反应的高效率，高速率和均匀性，并且为了实现适用于 制造SOI结构，并且在廉价的硅衬底的基础上实现可以形成发光元件或气体传感器的半导体衬底的形成，同时在溶解在反应中的气体的浓度进行化学反应 反应容器中的溶液总是控制在不大于其在反应期间的溶解度。

公开(公告)号：US06255731B1

公开(公告)日：2001-07-03

申请号：US09123364

申请日：1998-07-28

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Takeo Ushiki ,  Toshikuni Shinohara ,  Takahisa Nitta

IPC分类号： H01L2348

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L23/4825 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.

摘要翻译： 适用于千兆级集成（GSI）的半导体衬底包括至少其表面由半导体制成的支撑体，导电材料层，绝缘层和按上述顺序排列的半导体层。 导电材料层至少部分地具有通过使两种金属，金属和半导体，金属和金属 - 半导体化合物，半导体和金属 - 半导体化合物或两种金属 - 半导体化合物形成的导电反应层 互相反应。 在反应层和绝缘层或载体之间设置由不与反应层反应的材料制成的导电反应终止层。

公开(公告)号：US06650678B1

公开(公告)日：2003-11-18

申请号：US09512075

申请日：2000-02-24

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： A01S3097

CPC分类号： H01S3/0315 ,  G03F7/70383 ,  H01S3/0385 ,  H01S3/0975 ,  H01S3/225

摘要： A plasma is excited uniformly as a whole over the length of each slot. A laser oscillating apparatus is designed to excite a laser gas in a laser tube (2) by introducing electromagnetic waves into the laser tube through a plurality of slots (10) formed in a waveguide wall and generate a laser beam by resonating the light generated from the laser gas. A least one electrode (13) is placed near the slot (10). By giving a predetermined current density to the electrode (13), the intensity distribution of light generated from the laser gas above the slot (10) is controlled.

摘要翻译： 等离子体在每个槽的长度上作为整体被均匀地激发。 激光振荡装置被设计成通过在波导壁中形成的多个槽（10）将电磁波引入到激光管中来激发激光管（2）中的激光气体，并通过使从 激光气体。 至少一个电极（13）放置在槽（10）附近。 通过向电极（13）施加预定的电流密度，控制从狭槽（10）上方的激光气体产生的光的强度分布。

公开(公告)号：US06847672B2

公开(公告)日：2005-01-25

申请号：US09985707

申请日：2001-11-06

申请人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

IPC分类号： H01S5/30 ,  H01S3/036 ,  H01S3/22 ,  G03B27/42 ,  G03B27/54 ,  H01S3/03 ,  H01S3/223

CPC分类号： H01S3/036

摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

摘要翻译： 气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。 用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统 流体入口和/或在流体出口处。

公开(公告)号：US06829279B1

公开(公告)日：2004-12-07

申请号：US09494945

申请日：2000-02-01

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： H01S500

CPC分类号： G03F7/70025 ,  H01S3/0315 ,  H01S3/0385 ,  H01S3/225

摘要： In a laser oscillating apparatus for exciting a laser gas in a laser tube by introducing an electromagnetic wave from a waveguide into the laser tube through a plurality of slots formed in a waveguide wall, and generating a laser beam by resonating light emitted from the laser gas, the slots are formed in a line such that their longitudinal direction is consistent with the longitudinal direction of the waveguide, and a metal wall is so formed as to surround these slots. This metal wall forms a gap as a microwave passage from the slots to a window in the laser tube wall, thereby spacing the laser tube wall apart from the slots by a predetermined distance.

摘要翻译： 在激光振荡装置中，通过将形成在波导壁上的多个槽引入来自波导的电磁波向激光管激励激光器中的激光气体，通过使从激光气体发出的光共振而产生激光束 槽形成为一条直线，使得它们的纵向与波导的纵向方向一致，并且金属壁形成为围绕这些槽。 该金属壁形成从激光管壁中的狭缝到窗口的微波通道的间隙，从而将激光管壁与狭缝分开预定距离。

公开(公告)号：US06804285B2

公开(公告)日：2004-10-12

申请号：US09425015

申请日：1999-10-25

申请人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Hiroshi Osawa ,  Nobuyoshi Tanaka ,  Kazuhide Ino ,  Toshikuni Shinohara ,  Yasuyuki Shirai ,  Masaki Hirayama

IPC分类号： H01S322

CPC分类号： H01S3/036

摘要： A gas supply path structure forms a fluid path for allowing a laser gas to flow into or out of a pair of fluid inlet and outlet 11a and a laser gas is controlled to a predetermined subsonic speed at a throat portion. Gas supplies for controlling the speed of the gas are connected each to the fluid inlet and to the fluid outlet of the gas supply path structure and, together with a cooling device, compose a circulation system for controlling the speed and pressure of the laser gas at the fluid inlet and/or at the fluid outlet.

摘要翻译： 气体供给路径结构形成用于允许激光气体流入或流出一对流体入口和出口11a的流体路径，并且在喉部处将激光气体控制到预定的亚音速。 用于控制气体速度的气体供应装置连接到流体入口和气体供给路径结构的流体出口，并且与冷却装置一起构成用于控制激光气体的速度和压力的循环系统 流体入口和/或在流体出口处。

公开(公告)号：US06801554B1

公开(公告)日：2004-10-05

申请号：US09531958

申请日：2000-03-21

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： H01S300

CPC分类号： H01S3/225 ,  H01S3/0975

摘要： An excimer laser gas in a laser tube 2 is excited by a microwave introduced from awaveguide 1, and electric field concentration occurs in a slit-shaped gap 3 provided in a plate member 11c, causing plasma discharge. Then the phase of plasma light is regulated and the light is resonated, to cause excimer laser light. This construction realizes plasma excitation entirely uniform along a lengthwise direction of laser light emission, and enables uniform laser light emission with minimum energy loss.

摘要翻译： 激光管2中的准分子激光气体被从波导管1引入的微波激发，并且在设置在板构件11c中的狭缝状间隙3中发生电场浓度，引起等离子体放电。 然后等离子体光的相位被调节并且光被共振，以引起准分子激光。 这种结构实现了沿着激光发射的长度方向的等离子体激发完全均匀，并且以最小的能量损失实现均匀的激光发射。

公开(公告)号：US06744802B1

公开(公告)日：2004-06-01

申请号：US09512074

申请日：2000-02-24

申请人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobumasa Suzuki ,  Hiroshi Ohsawa ,  Nobuyoshi Tanaka ,  Toshikuni Shinohara ,  Masaki Hirayama

IPC分类号： H01S3097

CPC分类号： G03F7/70025 ,  H01S3/0315 ,  H01S3/0975 ,  H01S3/225

摘要： In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots (10) are formed at a predetermined pitch in a long end face (H plane) of each waveguide (1) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).

摘要翻译： 在时隙阵列结构中，实现了在激光管的长度上整体上均匀的电磁波发射，以允许具有最小能量损失的均匀的激光发射。 在每个波导（1）的长边（H平面）上沿着H平面的纵向方向上的中心线（m）以预定间距形成狭槽（10），以交替地位于左侧和右侧 的中心线（m）并与中心线（m）间隔开距离（d）。

公开(公告)号：US06958094B2

公开(公告)日：2005-10-25

申请号：US10332433

申请日：2001-07-06

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Toshikuni Shinohara ,  Tatsuo Ito ,  Koichi Kanaya

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Toshikuni Shinohara ,  Tatsuo Ito ,  Koichi Kanaya

IPC分类号： B23K26/00 ,  B23K26/06 ,  B23K26/12 ,  B23K26/40 ,  B28D1/22 ,  H01L21/304 ,  C30B25/12 ,  C30B25/14

CPC分类号： H01L21/304 ,  B23K26/0624 ,  B23K26/12 ,  B23K26/123 ,  B23K26/127 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221

摘要： The present invention provides a method for slicing a single crystal, wherein the single crystal is sliced by irradiating a portion to be sliced with an ultra short pulse laser beam while supplying a gas containing gaseous molecules or radicals that react with atoms constituting the single crystal to become stable gaseous molecules in the vicinity of the portion under slicing. Thus, there is provided a method for slicing a single crystal by using a laser processing, in which a single crystal is processed while obtaining a good sliced surface and markedly reducing a slicing loss.

摘要翻译： 本发明提供一种单晶切片方法，其中通过用超短脉冲激光束照射待切片的部分，同时将包含与构成单晶的原子反应的气态分子或自由基的气体供给到 在切片部分附近成为稳定的气态分子。 因此，提供了一种通过使用激光处理来切割单晶的方法，其中在获得良好的切片表面的同时处理单晶并显着降低切片损耗。

公开(公告)号：US06462298B1

公开(公告)日：2002-10-08

申请号：US09045526

申请日：1998-03-20

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Yasuyuki Shirai ,  Osamu Nakamura

IPC分类号： B23K3538

CPC分类号： B23K35/0205 ,  B23K9/28 ,  B23K35/222

摘要： The present invention provides a fixing structure for a welding electrode and a welding head which enable improvement of durability of a welding electrode, improvement of work efficiency in welding, and reduction of time required for welding and also which make it possible to execute welding for a long time with high reliability. In this fixing structure, a fixed section of a welding electrode is inserted via a thermally conductive material into an inserting section of a fixing base and a peripheral surface of the fixed section of the welding electrode is uniformly contacted to the fixing base to fix the welding electrode to the fixing base.

摘要翻译： 本发明提供一种焊接电极和焊接头的固定结构，其能够提高焊接电极的耐久性，提高焊接中的工作效率，并且减少焊接所需的时间，并且还可以执行焊接 长时间具有高可靠性。在该固定结构中，焊接电极的固定部分通过导热材料插入到固定基座的插入部分中，焊接电极的固定部分的周面与 固定基座，将焊接电极固定在固定基座上。