公开(公告)号：US08682374B2

公开(公告)日：2014-03-25

申请号：US12816204

申请日：2010-06-15

申请人： Tae Jun Kim ,  Jong Keun Youn

发明人： Tae Jun Kim ,  Jong Keun Youn

IPC分类号： H04B7/00

CPC分类号： H04M1/271 ,  H04M1/2745 ,  H04M2250/74

摘要： A mobile terminal and controlling method thereof are disclosed. According to the present invention, when audio information including recorded voice of a correspondent party is displayed on a screen of a mobile terminal, contact information matching the audio information of the correspondent party stored in the mobile terminal is searched and displayed on the screen. Therefore, a user is able to directly contact the correspondent party having recorded the audio information within the screen.

摘要翻译： 公开了一种移动终端及其控制方法。 根据本发明，当在移动终端的屏幕上显示包括记录方的记录声音的音频信息时，搜索和显示与存储在移动终端中的通信对方的音频信息相匹配的联系信息。 因此，用户能够直接联系在屏幕内记录了音频信息的对方。

公开(公告)号：US5461024A

公开(公告)日：1995-10-24

申请号：US117011

申请日：1993-12-09

申请人： Dae-Whang Kim ,  Dong Ju Jeon ,  Sang Soon Park ,  Jae Chun Woo ,  Tae Jun Kim

发明人： Dae-Whang Kim ,  Dong Ju Jeon ,  Sang Soon Park ,  Jae Chun Woo ,  Tae Jun Kim

IPC分类号： A01N47/28 ,  A01N47/36 ,  C07D409/12 ,  C07D491/048 ,  C07D491/052 ,  C07D521/00 ,  A01N43/66 ,  C07D409/14

CPC分类号： C07D521/00 ,  A01N47/36

摘要： A novel thiophenesulfonylurea derivative having herbicidal activity, having the formula (I): ##STR1## wherein the substituents are herein described.

摘要翻译： PCT No.PCT / KR92 / 00009 Sec。 371日期1993年12月9日第 102（e）日期1993年12月9日PCT提交1992年3月14日PCT公布。 出版物WO92 / 16525 具有式（I）的具有除草活性的新的噻吩磺酰基脲衍生物：描述。

公开(公告)号：US09186135B2

公开(公告)日：2015-11-17

申请号：US13580627

申请日：2011-08-29

申请人： Tae Jun Kim ,  Byung Gwan Kim ,  Daesung Song

发明人： Tae Jun Kim ,  Byung Gwan Kim ,  Daesung Song

IPC分类号： A61B17/04 ,  A61B17/06 ,  A61L17/14 ,  D02J3/00 ,  A61B17/00

CPC分类号： A61B17/06166 ,  A61B2017/00526 ,  A61B2017/00831 ,  A61B2017/06176 ,  A61L17/14 ,  D02J3/00

摘要： Provided are a medical suture having micro cogs on a surface thereof and a method of manufacturing the medical suture. The method of manufacturing a medical suture includes steps of: producing a suture preform where micro cogs are formed on a surface thereof by heating and pressing a raw material of a suture for surgery in an overflow mould in a heat-press solid-phase forming method; and producing a suture with twist maintained by applying a tensile force and a rotational force to the suture preform in a vacuum state where a specific temperature condition is maintained.

摘要翻译： 本发明提供一种在其表面上具有微型齿的医用缝合线以及制造医​​用缝合线的方法。 制造医用缝合线的方法包括以下步骤：通过在热压固相形成方法中在溢流模具中加热和压制用于外科手术的缝合线的原材料来生产在其表面上形成微型齿的缝合线预制件 ; 并且在保持特定温度条件的真空状态下，通过向缝合线预成型件施加张力和旋转力来生产具有扭曲的缝合线。

公开(公告)号：US20080105889A1

公开(公告)日：2008-05-08

申请号：US11976791

申请日：2007-10-29

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US08623692B2

公开(公告)日：2014-01-07

申请号：US13276044

申请日：2011-10-18

申请人： Myung Su Kim ,  Min Chul Song ,  Soon Young Park ,  Dong Seop Kim ,  Sung Chan Park ,  Yoon Mook Kang ,  Tae Jun Kim ,  Min Ki Shin ,  Sang Won Lee ,  Heung Kyoon Lim

发明人： Myung Su Kim ,  Min Chul Song ,  Soon Young Park ,  Dong Seop Kim ,  Sung Chan Park ,  Yoon Mook Kang ,  Tae Jun Kim ,  Min Ki Shin ,  Sang Won Lee ,  Heung Kyoon Lim

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

摘要翻译： 提出了一种制造太阳能电池的方法。 该方法包括：在光吸收层的第一表面上形成非晶硅层; 用掺杂剂掺杂非晶硅层; 通过用激光将掺杂剂扩散到非晶硅层中形成掺杂剂层; 通过去除保留在掺杂剂层外部的掺杂剂形成半导体层; 通过使用蚀刻剂蚀刻半导体层的表面; 在所述半导体层上形成第一电极; 以及在所述光吸收层的第二表面上形成第二电极。

公开(公告)号：US08124997B2

公开(公告)日：2012-02-28

申请号：US12756528

申请日：2010-04-08

申请人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

发明人： Tae Jun Kim ,  Su Yeol Lee ,  Dong Woo Kim ,  Hyun Ju Park ,  Hyoun Soo Shin ,  In Joon Pyeon

IPC分类号： H01L31/0232

CPC分类号： H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构 在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

公开(公告)号：US07906785B2

公开(公告)日：2011-03-15

申请号：US11585212

申请日：2006-10-24

申请人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0033 ,  H01L33/32

摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

摘要翻译： 提供了一种垂直氮化物半导体发光器件及其制造方法。 在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。 接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积 。 高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

公开(公告)号：US07791100B2

公开(公告)日：2010-09-07

申请号：US11602285

申请日：2006-11-21

申请人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

发明人： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/38

摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

摘要翻译： 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

公开(公告)号：US07393710B2

公开(公告)日：2008-07-01

申请号：US11247935

申请日：2005-10-11

申请人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

发明人： Jin Chul Kim ,  Su Yeol Lee ,  Chang Zoo Kim ,  Sang Heon Han ,  Keun Man Song ,  Tae Jun Kim ,  Seok Beom Choi

IPC分类号： H01L21/00

CPC分类号： H01S5/4031 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01S5/2231 ,  H01S5/4087 ,  H01S2304/04

摘要： The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.

摘要翻译： 本发明涉及一种双波长半导体激光器件，更具体地涉及一种多波长半导体激光器件的制造方法。 在该方法中，提供了具有分隔成至少第一和第二区域的上表面的基板。 然后，形成基板上的第一电介质掩模，仅露出第一区域。 然后，在衬底的第一区域上生长用于第一半导体激光器的外延层。 然后，形成基板上的第二电介质掩模，仅露出第二区域。 然后，在衬底的第二区域上生长用于第二半导体激光器的外延层。

公开(公告)号：US06653724B1

公开(公告)日：2003-11-25

申请号：US10198982

申请日：2002-07-22

申请人： Tae Jun Kim ,  Yoo Sun Song

发明人： Tae Jun Kim ,  Yoo Sun Song

IPC分类号： H01L2306

CPC分类号： G06F3/0317 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed herein is a chip on board lead package for optical mice and lens cover for the same. A semiconductor chip on board package for optical mice has a board, a semiconductor chip, at least one circuit pattern, at least one bonding wire, and a lens cover. The board has top and bottom surfaces, and a pair of via holes. The semiconductor chip is attached to a center portion on the top surface of the board and provided with a plurality of electrode terminals. The circuit pattern is formed on the top surface of the board. The bonding wire electrically connects the electrode terminals of the semiconductor chip with the circuit pattern. The lens cover encloses the top surface of the board and has a lens disposed on the same axis as that of the semiconductor chip, a plurality of electrode pins formed at positions of the lens cover corresponding to the positions of the via holes in the board to be integrated with the lens cover, and an opening formed in a center portion within the lens cover.

摘要翻译： 这里公开了用于光学鼠标的芯片上的铅封装和用于其的透镜盖。 用于光学鼠标的半导体芯片板上封装具有板，半导体芯片，至少一个电路图案，至少一个接合线和透镜盖。 该板具有顶面和底面，以及一对通孔。 半导体芯片安装在板的顶表面上的中心部分并且设置有多个电极端子。 电路图案形成在板的顶表面上。 接合线将半导体芯片的电极端子与电路图形电连接。 透镜盖包围板的上表面，并且具有与半导体芯片相同的轴上设置的透镜，形成在透镜盖的位置上的多个电极引脚对应于板中的通孔的位置到 与透镜盖一体化，以及形成在透镜盖内的中心部分的开口。