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    3-D printed materials, structures and processes
    1.
    发明授权
    3-D printed materials, structures and processes 有权

    公开(公告)号：US10751951B1

    公开(公告)日：2020-08-25

    申请号：US14537920

    申请日：2014-11-11

    申请人： Tai Dung Nguyen ,  Tue Nguyen

    发明人： Tai Dung Nguyen ,  Tue Nguyen

    IPC分类号： B33Y10/00 ,  B29C64/10 ,  B29C64/182 ,  B29C64/393 ,  B81C3/00 ,  B29C67/00

    摘要： Molds including 3D printed components can be used to cast objects. A model of the object can be separated into multiple components, with each component not having non-printable overhang structures, thus allowing the components to be directly printed without support structures. Shell models and shell molds, e.g., molds with hollow interior, can be used for cost effectiveness. The surface of the printed object can be smoothened, for example, by solvent vapor (such as acetone for plastic), by sanding, or by a smooth coating. The object can be combinatorially cast.

    Nanolayer deposition process
    2.
    发明授权
    Nanolayer deposition process 有权
    纳米层沉积工艺

    公开(公告)号：US08658259B2

    公开(公告)日：2014-02-25

    申请号：US12732825

    申请日：2010-03-26

    申请人： Tue Nguyen ,  Tai Dung Nguyen

    发明人： Tue Nguyen ,  Tai Dung Nguyen

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45525 ,  C23C16/56

    摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

    摘要翻译： 提供了称为NanoLayer沉积（NLD）的CVD和ALD的混合沉积工艺。 纳米层沉积工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积薄膜而不是自限制的沉积工艺的第一步骤，然后第二步骤是清洗第一组前体和第三步 引入第二多个前体以修饰沉积的薄膜的步骤。 使用第一组前体的NLD工艺中的沉积步骤不是自限制的，并且是衬底温度和处理时间的函数。 第二组前体改变已沉积的膜特性。 第二组前体可以处理沉积的膜，例如膜组成的改变，掺杂或从沉积膜去除杂质。 第二组前体也可以在沉积膜上沉积另一层。 附加层可以与现有层反应以形成化合物层，或者可以具有最小的反应以形成纳米层间膜。

    Assembly line processing method
    3.
    发明授权
    Assembly line processing method 有权
    装配线加工方法

    公开(公告)号：US07153542B2

    公开(公告)日：2006-12-26

    申请号：US10212546

    申请日：2002-08-06

    申请人： Tue Nguyen ,  Tai Dung Nguyen ,  Craig Alan Bercaw

    发明人： Tue Nguyen ,  Tai Dung Nguyen ,  Craig Alan Bercaw

    IPC分类号： B05D1/38 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52 ,  C23C14/54 ,  C23C16/56

    CPC分类号： H01L21/67173 ,  C23C16/45551 ,  H01L21/6719

    摘要： An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

    摘要翻译： 用于对工件进行连续处理的装置包括装配线处理系统。 该装置包括在多个处理站下以装配线方式移动的多个工件。 多个工艺站在工件上提供不同的工艺以便对工件进行顺序处理。 顺序处理动作通过各工序站下的工件的移动进行。

    NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS
    6.
    发明申请
    NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS 有权
    复合膜的纳米层沉积工艺

    公开(公告)号：US20120021138A1

    公开(公告)日：2012-01-26

    申请号：US13235909

    申请日：2011-09-19

    申请人： Robert Anthony Ditizio ,  Tue Nguyen ,  Tai Dung Nguyen

    发明人： Robert Anthony Ditizio ,  Tue Nguyen ,  Tai Dung Nguyen

    IPC分类号： H05H1/24

    CPC分类号： C23C16/56 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/45536

    摘要： A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.

    摘要翻译： 提供了用于沉积三次，四元，五元和六元化学计量薄膜的复合膜的纳米层沉积（NLD）沉积方法。 本发明的沉积工艺是由一系列薄膜沉积和处理步骤组成的循环工艺，以获得所需的膜化学计量。 沉积步骤不是像在原子层沉积中那样自限制的。 在用于沉积复合氧化物膜的一个实施方案中，沉积工艺包括第一沉积，随后是含氢等离子体处理，第二次沉积，然后进行含氢等离子体处理，然后进行第三次沉积，然后是含氢 然后进行含氧等离子体处理以产生化学计量的四元膜。 重复循环过程，直到达到所需的总膜厚度。 本发明的方法用于制造高k电介质膜，铁电体膜，压电膜和其它复合氧化物。

    NANOLAYER DEPOSITION PROCESS
    7.
    发明申请
    NANOLAYER DEPOSITION PROCESS 有权
    NANOLAYER沉积工艺

    公开(公告)号：US20100190353A1

    公开(公告)日：2010-07-29

    申请号：US12732825

    申请日：2010-03-26

    申请人： Tue Nguyen ,  Tai Dung Nguyen

    发明人： Tue Nguyen ,  Tai Dung Nguyen

    IPC分类号： H01L21/461

    CPC分类号： C23C16/45525 ,  C23C16/56

    摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

    摘要翻译： 提供了称为NanoLayer沉积（NLD）的CVD和ALD的混合沉积工艺。 纳米层沉积工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积薄膜而不是自限制的沉积工艺的第一步骤，然后第二步骤是清洗第一组前体和第三步 引入第二多个前体以修饰沉积的薄膜的步骤。 使用第一组前体的NLD工艺中的沉积步骤不是自限制的，并且是衬底温度和处理时间的函数。 第二组前体改变已沉积的膜特性。 第二组前体可以处理沉积的膜，例如膜组成的改变，掺杂或从沉积膜去除杂质。 第二组前体也可以在沉积膜上沉积另一层。 附加层可以与现有层反应以形成化合物层，或者可以具有最小的反应以形成纳米层间膜。

    Multilayered diffusion barrier structure for improving adhesion property
    8.
    发明授权
    Multilayered diffusion barrier structure for improving adhesion property 有权
    用于提高粘合性能的多层扩散阻挡结构

    公开(公告)号：US06670266B2

    公开(公告)日：2003-12-30

    申请号：US10292929

    申请日：2002-11-13

    申请人： Tue Nguyen ,  Tai Dung Nguyen

    发明人： Tue Nguyen ,  Tai Dung Nguyen

    IPC分类号： H01L214763

    CPC分类号： H01L21/76888 ,  H01L21/76846 ,  H01L21/76856

    摘要： A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.

    摘要翻译： 已经提供了一种用于提高铜在集成电路基板中与氮化金属扩散阻挡材料（例如TiN）的粘附性的方法。 该方法提供了多层扩散阻挡结构，其包括在选定位置的导电扩散阻挡层和不良导电的粘附促进剂层。 在选择的位置形成不良导电的粘合促进剂层可以优化接触电阻和粘附性。 不良导电的粘合促进剂层通过将氧部分掺入扩散阻挡层或通过在氧气氛中沉积而形成。