公开(公告)号：US11935842B2

公开(公告)日：2024-03-19

申请号：US17401616

申请日：2021-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Puu Jeng ,  Clinton Chao ,  Szu-Wei Lu

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/56 ,  H01L21/78 ,  H01L23/52 ,  H01L23/58

CPC classification number: H01L23/562 ,  H01L21/0214 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3185 ,  H01L21/32051 ,  H01L21/563 ,  H01L21/565 ,  H01L21/78 ,  H01L23/52 ,  H01L24/05 ,  H01L24/81 ,  H01L24/85 ,  H01L24/96 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/02282 ,  H01L23/585 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48175 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3511 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2224/48465 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00014 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 μm, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.

公开(公告)号：US20210375789A1

公开(公告)日：2021-12-02

申请号：US17401616

申请日：2021-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Puu Jeng ,  Clinton Chao ,  Szu-Wei Lu

IPC: H01L23/00 ,  H01L21/302 ,  H01L23/52 ,  H01L21/56 ,  H01L21/78 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3205

Abstract: Warpage and breakage of integrated circuit substrates is reduced by compensating for the stress imposed on the substrate by thin films formed on a surface of the substrate. Particularly advantageous for substrates having a thickness substantially less than about 150 μm, a stress-tuning layer is formed on a surface of the substrate to substantially offset or balance stress in the substrate which would otherwise cause the substrate to bend. The substrate includes a plurality of bonding pads on a first surface for electrical connection to other component.