公开(公告)号：US20230178603A1

公开(公告)日：2023-06-08

申请号：US18102812

申请日：2023-01-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shin-Jiun Kuang ,  Meng-Yu Lin ,  Chun-Fu Cheng ,  Chung-Wei WU

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L29/0673 ,  H01L29/6656 ,  H01L29/66553 ,  H01L21/823431 ,  H01L29/7848 ,  H01L29/7851 ,  H01L29/66795 ,  H01L29/0653

摘要： Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

公开(公告)号：US20220278196A1

公开(公告)日：2022-09-01

申请号：US17187320

申请日：2021-02-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shin-Jiun Kuang ,  Meng-Yu Lin ,  Chun-Fu Cheng ,  Chung-Wei WU

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

摘要： Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

公开(公告)号：US12034044B2

公开(公告)日：2024-07-09

申请号：US18102812

申请日：2023-01-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shin-Jiun Kuang ,  Meng-Yu Lin ,  Chun-Fu Cheng ,  Chung-Wei Wu

IPC分类号： H01L29/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/0673 ,  H01L21/823431 ,  H01L29/0653 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

摘要： Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

公开(公告)号：US20240014042A1

公开(公告)日：2024-01-11

申请号：US17861236

申请日：2022-07-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Meng-Yu Lin ,  Chun-Fu Cheng ,  Cheng-Yin Wang ,  Yi-Bo Liao ,  Szuya Liao

IPC分类号： H01L21/28 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L21/3213 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L21/28123 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/775 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/8221 ,  H01L21/823828 ,  H01L21/823871 ,  H01L29/66742 ,  H01L29/66439

摘要： A semiconductor device includes a fin, first source/drain regions, second source/drain regions, a first nanosheet, a second nanosheet and a metal gate structure. The fin extends in a first direction and protrudes above an insulator. The first source/drain regions are over the fin. The second source/drain regions are over the first source/drain regions. The first nanosheet extends in the first direction between the first source/drain regions. The second nanosheet extends in the first direction between the second source/drain regions. The metal gate structure is over the fin and between the first source/drain regions. The metal gate structure extends in a second direction different from the first direction from a first sidewall to a second sidewall. A first distance in the second direction between the first nanosheet and the first sidewall is smaller than a second distance in the second direction between the first nanosheet and the second sidewall.

公开(公告)号：US20160240719A1

公开(公告)日：2016-08-18

申请号：US14621635

申请日：2015-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L31/112 ,  H01L31/18 ,  H01L31/0336 ,  H01L21/02

CPC分类号： H01L21/02568 ,  C01B32/186 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/778

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

摘要翻译： 描述了包括二维（2D）材料的半导体器件及其制造方法。 在一个实施例中，用于制造包括2D材料的半导体器件的方法可以包括：在衬底上外延地形成第一2D材料层; 并且在所述第一2D材料层上外延地形成第二2D材料层，所述第一2D材料层和所述第二2D材料层的组成不同。

公开(公告)号：US11569348B2

公开(公告)日：2023-01-31

申请号：US17187320

申请日：2021-02-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Shin-Jiun Kuang ,  Meng-Yu Lin ,  Chun-Fu Cheng ,  Chung-Wei Wu

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

摘要： Embodiments of the present disclosure relate to forming a nanosheet multi-channel device with an additional spacing layer and a hard mask layer. The additional spacing layer provides a space for an inner spacer above the topmost channel. The hard mask layer functions as an etch stop during metal gate etch back, providing improve gate height control.

公开(公告)号：US10157737B2

公开(公告)日：2018-12-18

申请号：US15807178

申请日：2017-11-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/267 ,  H01L29/66 ,  H01L29/778 ,  C01B32/186 ,  H01L29/16 ,  H01L29/24

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

公开(公告)号：US20180068851A1

公开(公告)日：2018-03-08

申请号：US15807178

申请日：2017-11-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L21/02 ,  H01L29/778 ,  H01L29/66 ,  H01L29/267 ,  H01L29/16 ,  H01L29/24

CPC分类号： H01L21/02568 ,  C01B32/186 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/778

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.

公开(公告)号：US09859115B2

公开(公告)日：2018-01-02

申请号：US14621635

申请日：2015-02-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  National Taiwan University

发明人： Meng-Yu Lin ,  Shih-Yen Lin ,  Si-Chen Lee ,  Samuel C. Pan

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/267 ,  H01L29/66 ,  H01L29/778 ,  C01B32/186 ,  H01L29/16 ,  H01L29/24

CPC分类号： H01L21/02568 ,  C01B32/186 ,  H01L21/02444 ,  H01L21/02485 ,  H01L21/02499 ,  H01L21/0259 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66045 ,  H01L29/778

摘要： Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.