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1.发明申请公开(公告)号：US20210383972A1
公开(公告)日：2021-12-09
申请号：US17411416
申请日：2021-08-25
发明人： Anderson Lin , Chun-Ren Cheng , Chi-Yuan Shih , Shih-Fen Huang , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yen-Wen Chen , Fu-Chun Huang , Fan Hu , Ching-Hui Lin , Yan-Jie Liao
IPC分类号： H01G4/012 , H01G4/228 , H01G4/12 , H01L21/3213 , H01L21/311 , H01L49/02 , H01L41/113 , H01L41/083 , H01L41/047
摘要： Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.
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公开(公告)号：US09266724B2
公开(公告)日：2016-02-23
申请号：US14330210
申请日：2014-07-14
发明人： Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： B81C1/00 , H01L21/683
CPC分类号： B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
摘要： An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
摘要翻译： 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。
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公开(公告)号：US08878355B2
公开(公告)日：2014-11-04
申请号：US13660374
申请日：2012-10-25
发明人： Kuei-Sung Chang , Nien-Tsung Tsai , Ting-Hau Wu , Yi Heng Tsai
CPC分类号： H01L24/29 , H01L24/05 , H01L24/32 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05082 , H01L2224/26145 , H01L2224/2745 , H01L2224/29011 , H01L2224/29012 , H01L2224/29013 , H01L2224/29036 , H01L2224/29078 , H01L2224/291 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29193 , H01L2224/32506 , H01L2224/83097 , H01L2224/83193 , H01L2224/83194 , H01L2224/83203 , H01L2224/83805 , H01L2225/06513 , H01L2924/01013 , H01L2924/01014 , H01L2924/01079 , H01L2924/01322 , H01L2924/00014 , H01L2924/01032 , H01L2924/00012
摘要： A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.
摘要翻译： 提供一种用于接合半导体器件的系统和方法。 一个实施方案包括通过以栅格图案提供其中一种反应物的附加材料来停止共晶粘合材料的流动，使得当共晶材料流入附加材料时，附加材料将改变流动共晶材料的组成 并使材料固化，从而停止流动。 其他实施例提供了额外的布局以将附加材料放入流动共晶材料的路径中。
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4.发明公开公开(公告)号：US20240290541A1
公开(公告)日：2024-08-29
申请号：US18659337
申请日：2024-05-09
发明人： Anderson Lin , Chun-Ren Cheng , Chi-Yuan Shih , Shih-Fen Huang , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yen-Wen Chen , Fu-Chun Huang , Fan Hu , Ching-Hui Lin , Yan-Jie Liao
IPC分类号： H01G4/012 , H01G4/12 , H01G4/228 , H01L21/311 , H01L21/3213 , H10N30/30 , H10N30/50 , H10N30/87
CPC分类号： H01G4/012 , H01G4/12 , H01G4/228 , H01L21/31111 , H01L21/32139 , H01L28/60 , H10N30/302 , H10N30/501 , H10N30/508 , H10N30/872
摘要： Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure and a second conductive structure. A dielectric structure is arranged between the first conductive structure and the second conductive structure. The dielectric structure comprises an upper region over a lower region. The lower region comprises a first lateral surface and a second lateral surface on opposing sides of the upper region. A passivation layer overlies the second conductive structure and the dielectric structure. The passivation layer comprises a lateral segment contacting the first lateral surface. A height of the lateral segment is greater than a height of the upper region. A top surface of the lateral segment is below a top surface of the passivation layer.
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公开(公告)号：US11736037B2
公开(公告)日：2023-08-22
申请号：US16668660
申请日：2019-10-30
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： G01P15/125 , G01P15/00 , H02N1/00 , B81B3/00 , G01P15/08
CPC分类号： H02N1/006 , B81B3/001 , B81B3/0005 , B81B3/0008 , G01P15/125 , H02N1/00 , B81B2201/0235 , G01P2015/0871 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.
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公开(公告)号：US09422153B2
公开(公告)日：2016-08-23
申请号：US14803948
申请日：2015-07-20
发明人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
CPC分类号： B81B7/007 , B81C1/0023 , B81C1/00238 , B81C1/00301 , B81C2203/0792
摘要： An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.
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公开(公告)号：US09281287B2
公开(公告)日：2016-03-08
申请号：US14531878
申请日：2014-11-03
发明人： Kuei-Sung Chang , Nien-Tsung Tsai , Ting-Hau Wu , Yi Heng Tsai
IPC分类号： H01L23/48 , H01L23/52 , H01L23/02 , H01L23/22 , H01L23/24 , H01L23/00 , H01L25/065 , H01L25/00
CPC分类号： H01L24/29 , H01L24/05 , H01L24/32 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2224/05082 , H01L2224/26145 , H01L2224/2745 , H01L2224/29011 , H01L2224/29012 , H01L2224/29013 , H01L2224/29036 , H01L2224/29078 , H01L2224/291 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29193 , H01L2224/32506 , H01L2224/83097 , H01L2224/83193 , H01L2224/83194 , H01L2224/83203 , H01L2224/83805 , H01L2225/06513 , H01L2924/01013 , H01L2924/01014 , H01L2924/01079 , H01L2924/01322 , H01L2924/00014 , H01L2924/01032 , H01L2924/00012
摘要： A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.
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公开(公告)号：US20150288297A1
公开(公告)日：2015-10-08
申请号：US14745696
申请日：2015-06-22
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： H02N1/00
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.
摘要翻译： 微机电系统（MEMS）装置包括基板和至少部分地悬挂在基板上方且具有至少一个自由度的可移动元件。 所述MEMS器件还包括从所述衬底延伸并且构造成当所述可移动元件以至少一个自由度移动时接触所述可移动元件的突起，其中所述突起包括具有高于约15°的水接触角的表面 在空气中
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9.发明授权公开(公告)号：US12082505B2
公开(公告)日：2024-09-03
申请号：US17881934
申请日：2022-08-05
发明人： Alexander Kalnitsky , Chun-Ren Cheng , Chi-Yuan Shih , Kai-Fung Chang , Shih-Fen Huang , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yan-Jie Liao
IPC分类号： H10N30/04 , G01N25/58 , H10N30/00 , H10N30/067 , H10N30/87 , H10N30/063
CPC分类号： H10N30/10513 , G01N25/58 , H10N30/04 , H10N30/067 , H10N30/877 , H10N30/063
摘要： In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.
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公开(公告)号：US20200067425A1
公开(公告)日：2020-02-27
申请号：US16668660
申请日：2019-10-30
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： H02N1/00 , G01P15/125 , B81B3/00
摘要： A microelectromechanical system (MEMS) device includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. The MEMS device further includes a protrusion extending from the substrate and configured to contact the movable element when the movable element moves in the at least one degree of freedom, wherein the protrusion comprises a surface having a water contact angle of higher than about 15° measured in air.
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