摘要:
A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline diamond is metallized (step 102). The metallized surface of the polycrystalline diamond is grooved with a YAG laser (step 103). A wedge or the like is driven into the grooves of the polycrystalline diamond to pressurize the same, whereby the polycrystalline diamond is divided along the grooves (step 104). Alternatively, a surface of a polycrystalline diamond prepared by chemical vapor deposition is grooved with a YAG laser (step 112), and the surface of the polycrystalline diamond is metallized (step 113) after the grooving. The obtained diamond heat sink (10) includes a first layer (11a) grooved with a laser, and a mechanically divided second layer (11b). Graphite adheres to the outer peripheral surface of the first layer (11a). The outer peripheral surface of the second layer (11b) has a greater surface roughness than that of the first layer (11a).
摘要:
A semiconductor laser is provided with a heat radiating component for radiating or dissipating heat which is generated in operation. In this heat radiating component, a polycrystalline diamond layer (3) synthesized by vapor deposition is formed on an upper surface of a stem (4). A semiconductor laser element (1) is bonded, e.g. by brazing to the surface of the vapor-deposited polycrystalline diamond layer (3) through a brazing filler metal (2). The heat radiating component has a thermal expansion coefficient which is the same as that of an LSI chip to be mounted thereon to provide an excellent heat radiating property.
摘要:
A polycrystalline diamond is prepared by chemical vapor deposition (step 101). A surface of the polycrystalline diamond is metallized (step 102). The metallized surface of the polycrystalline diamond is grooved with a YAG laser (step 103). A wedge or the like is driven into the grooves of the polycrystalline diamond to pressurize the same, whereby the polycrystalline diamond is divided along the grooves (step 104). Alternatively, a surface of a polycrystalline diamond prepared by chemical vapor deposition is grooved with a YAG laser (step 112), so that the surface of the polycrystalline diamond is metallized (step 113) after the grooving.
摘要:
The present invention provides a thermocompression tool, i.e. high strength bonding tool used for mounting a semiconductor device or element such as IC, LSI, etc. on a substrate, for example, a tool of pulse heating type used for soldering, and a mounting tool (bonding tool) used for heating, melting and bonding or thermocompression bonding in a lump a number of workpieces to be bonded, making up a part of electronic parts, in particular, a high precision tool called outer lead bonding tool. The high strength bonding tool comprises a substrate consisting of a cemented carbide having microscopic protrusions of hard carbides and/or hard carbonitrides on at least one surface and a coefficient of linear expansion of 4.0.times.10.sup.-6 to 5.5.times.10.sup.-6 /.degree. C. at room temperature to 400.degree. C. and a polycrystalline diamond coating formed on the above described surface having microscopic protrusions by a gaseous phase synthesis method, the surface coated with the polycrystalline diamond coating being used as a tool end surface.
摘要:
The present invention provides a thermocompression tool, i.e. high strength bonding tool used for mounting a semiconductor device or element such as IC, LSI, etc. on a substrate, for example, a tool of pulse heating type used for soldering, and a mounting tool (bonding tool). The tool is used for heating, melting and bonding or thermocompression bonding in a lump a number of workpieces to be bonded, making up a part of electronic parts, in particular, a high precision tool called outer lead bonding tool. The high strength bonding tool has a substrate that is composed of a cemented carbide having microscopic protrusions of hard carbides and/or hard carbonitrides on at least one surface and having a coefficient of linear expansion of 4.0.times.10.sup.-6 to 5.5.times.10.sup.-6 /.degree.C. at room temperature to 400.degree. C. Furthermore, a polycrystalline diamond coating is formed on the surface having microscopic protrusions by a gaseous phase synthesis method, the surface coated with the polycrystalline diamond coating being used as a tool end surface.
摘要:
A polycrystalline diamond cutting tool comprises a tool material of polycrystalline diamond formed by low-pressure vapor deposition, which is bonded to a shank of cemented carbide through a brazing layer. The thickness of the polycrystalline diamond layer is set at 0.1 to 1.0 mm, while that of the brazing layer is set at 10 to 50 .mu.m. The brazing layer is made of a material having a melting point of 950.degree. to 1300.degree. C., which is in the form of an alloy layer containing at least one material selected from metals belonging to the groups IVa, Va, VIa and VIIa of the periodic table and carbides thereof and at least one material selected from Au, Ag, Cu, Pt, Pd and Ni. The polycrystalline diamond cutting tool is improved in heat resistance and tool strength. In order to improve deposition resistance of the cutting tool, the surface roughness of a tool rake face is set to be not more than 0.2 .mu.m in Rmax. A portion of the polycrystalline diamond layer up to a depth of 10 .mu.m from the rake face contains 99 to 100 atomic percent of carbon elements, and 99 to 100% of carbon atoms are diamond-bonded. A surface of the polycrystalline diamond layer which has been in contact with the substrate during formation of the polycrystalline diamond layer defines the rake face, whose surface is subjected to ion beam machining and thereafter treated in the atmosphere at a temperature of 300.degree. to 500.degree. C.
摘要:
A polycrystal diamond fluted tool is provided which is capable of effecting working with much higher accuracy and longer life as compared with the sintered diamond straight fluted tool of the prior art, and is particularly suitable for finishing working with high accuracy. The tool is produced by forming, by a vapor phase synthesis method, a polycrystal diamond film on the surface of a substrate which has been subjected to helical grinding, then subjecting the product to a chemical treatment to dissolve and remove only the substrate, brazing the resulting polycrystal diamond film in a fluted form to at least a part of the rake face of a tool base metal which has been subjected to helical grinding in a similar manner to the substrate, and then subjecting the brazed tool base metal to working of a flank face to form a cutting edge.
摘要:
A method of manufacturing a diamond sintered body includes the following steps: preparing a diamond powder having a particle size within a range of 0.1 to 10 .mu.m, coating the surface of each particle of the diamond powder with a sintering assistant agent including Pd within a range of 0.01 to 40 percent by weight and at least one iron family metal as a remainder, and liquid-phase sintering the coated diamond powder under a high pressure and high temperature condition. In this manner, a diamond sintered body having high strength and high wear-resistance, and containing diamond particles of 80 to 96 percent by volume, can be obtained.
摘要:
A polycrystalline diamond cutting tool is prepared by employing polycrystalline diamond which is synthesized on a mirror-finished surface of a base material by a low-pressure vapor phase method, as a tool material. A surface, which has been in contact with the base material, of the polycrystalline diamond layer is utilized as a tool rake face. A flank of the tool is formed by laser processing. The flank is covered with a graphite coating layer in one embodiment, while such a graphite coating layer is removed by acid treatment or the like in another embodiment. In still another embodiment, a flank is formed by grinding, and a cutting edge portion is honed by laser processing.
摘要:
A coated sintered body can be used for a cutting tool for precision machining of hardened steel. The coated PCBN cutting tool includes a substrate which contains not less than 35 volume % and not more than 85 volume % of CBN, and a hard coated layer formed on the substrate. The hard coated layer comprises at least one compound layer consisting of at least one element selected from the group 4a, 5a, and 6a elements of the periodic table and Al, and at least one element selected from C, N and O. The thickness of the layer is not less than 0.3 &mgr;m and not more than 10 &mgr;m. The center-line mean roughness of the hard coated layer is not more than 0.1 &mgr;m.