公开(公告)号：US20130295751A1

公开(公告)日：2013-11-07

申请号：US13978942

申请日：2012-01-13

申请人： Takamasa Kato ,  Masaki Narushima ,  Kenichi Hara

发明人： Takamasa Kato ,  Masaki Narushima ,  Kenichi Hara

IPC分类号： H01L21/02

CPC分类号： H01L21/02617 ,  C23C24/02 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/20 ,  Y02E10/541 ,  Y02E10/543

摘要： This thin film forming method for a solar cell forms a thin film that contains a plurality of elements on the surface of an object to be processed. A raw material solution that contains the elements is dispersed in a processing space and microparticles by an electric field, and the microparticles that are dispersed form a thin film that adheres to the surface of the object to be processed. Thus, a thin film for a solar cell element with preferable crystallinity can be formed even in an atmosphere at atmospheric pressure.

摘要翻译： 该太阳能电池薄膜形成方法形成在被处理物的表面上含有多个元素的薄膜。 含有这些元素的原料溶液通过电场分散在处理空间和微粒中，并且分散的微粒形成粘附到待处理物体的表面的薄膜。 因此，即使在大气压的气氛中也可以形成具有优选结晶性的太阳能电池元件用薄膜。

公开(公告)号：US20130217225A1

公开(公告)日：2013-08-22

申请号：US13819431

申请日：2011-07-29

申请人： Takashi Hayakawa ,  Kenichi Hara ,  Takashi Tanaka

发明人： Takashi Hayakawa ,  Kenichi Hara ,  Takashi Tanaka

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/288 ,  H01L21/31053 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/7682 ,  H01L21/76852 ,  H01L21/76885 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method comprising the steps of: forming a copper film (101) on a Cu barrier film (100); forming a mask material (102) on the copper film (101); anisotropically etching the copper film (101) until the Cu barrier film (100) is exposed, using the mask material (102) as a mask; and removing the mask material (102) and subsequently forming a plating film (104) that contains a substance for suppressing copper diffusion on the anisotropically etched copper film (101), using an electroless plating method that utilizes a selective deposition in which catalytic action occurs with respect to the copper film (101) but not the Cu barrier film (100).

摘要翻译： 一种方法，包括以下步骤：在Cu阻挡膜（100）上形成铜膜（101）; 在所述铜膜（101）上形成掩模材料（102）; 使用掩模材料（102）作为掩模，各向异性地蚀刻铜膜（101）直到Cu阻挡膜（100）露出; 并且使用利用选择性沉积的化学镀方法，除去掩模材料（102）并随后在各向异性蚀刻的铜膜（101）上形成含有抑制铜扩散的物质的镀膜（104） 相对于铜膜（101）而不是铜阻挡膜（100）。

公开(公告)号：US20130203260A1

公开(公告)日：2013-08-08

申请号：US13819382

申请日：2011-07-29

申请人： Kenichi Hara ,  Takashi Hayakawa

发明人： Kenichi Hara ,  Takashi Hayakawa

IPC分类号： H01L21/768 ,  H01L21/67

CPC分类号： H01L21/76886 ,  C23F4/00 ,  H01J37/3053 ,  H01J2237/0817 ,  H01J2237/334 ,  H01L21/32136 ,  H01L21/67069 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： This etching method comprises a step for forming an organic compound gas (22) atmosphere around a copper film (101) that has a mask material (102) formed on the surface thereof and a step for using the mask material (102) as a mask on the copper film (101), irradiating with oxygen ions (6), and performing anisotropic etching of the copper film (101) in the organic compound gas (22) atmosphere.

摘要翻译： 该蚀刻方法包括在其表面形成有掩模材料（102）的铜膜（101）周围形成有机化合物气体（22）气氛的步骤和使用掩模材料（102）作为掩模的步骤 在铜膜（101）上照射氧离子（6），并对有机化合物气体（22）气氛中的铜膜（101）进行各向异性蚀刻。

公开(公告)号：US20080226826A1

公开(公告)日：2008-09-18

申请号：US12091197

申请日：2007-06-22

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： B05D3/10 ,  B05C11/08

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.

摘要翻译： 基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在靶基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理 通过无电镀形成的CoWB膜的表面覆盖Cu互连线。

公开(公告)号：US4320378A

公开(公告)日：1982-03-16

申请号：US194248

申请日：1980-03-18

申请人： Harutaka Taniguchi ,  Kenichi Hara ,  Hideo Shiraishi ,  Shinji Kiyofuji

发明人： Harutaka Taniguchi ,  Kenichi Hara ,  Hideo Shiraishi ,  Shinji Kiyofuji

IPC分类号： G01N27/12 ,  G01N27/403 ,  G01N27/407 ,  H01L7/00

CPC分类号： G01N27/4071 ,  G01N27/4077

摘要： Into a metal tube (24) provided with vent-holes (32) is inserted an oxygen sensor element (10) which comprises a ceramic round rod coated with a porous thick membrane of transition-metal oxide, divided electrode thick membranes (14) and a protective layer therefor, thereby to obtain an oxygen sensor. One electrode of the oxygen sensor element is connected to the metal tube and the opposite electrode is connected to a connecting lead wire (64, 66) electrically insulated from the tube, so that the oxygen sensor is rich in toughness against the mechanical oscillation and impact. The sensor may suitably be used to detect the oxygen content in the waste gas of automobiles.

摘要翻译： 在设置有通气孔（32）的金属管（24）中插入氧传感器元件（10），该氧传感器元件（10）包括涂覆有过渡金属氧化物的多孔厚膜的陶瓷圆棒，分隔电极厚膜（14）和 其保护层，从而获得氧传感器。 氧传感器元件的一个电极连接到金属管，并且相对电极连接到与管电绝缘的连接引线（64,66），使得氧传感器具有相对于机械振荡和冲击的韧性 。 传感器可适当地用于检测汽车废气中的氧气含量。

公开(公告)号：US08062955B2

公开(公告)日：2011-11-22

申请号：US12091131

申请日：2007-06-22

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： H01L21/76

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.

公开(公告)号：US08003509B2

公开(公告)日：2011-08-23

申请号：US12405644

申请日：2009-03-17

申请人： Kenichi Hara ,  Mitsuaki Iwashita ,  Takashi Tanaka ,  Takayuki Toshima ,  Takehiko Orii

发明人： Kenichi Hara ,  Mitsuaki Iwashita ,  Takashi Tanaka ,  Takayuki Toshima ,  Takehiko Orii

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1628 ,  H01L21/76849

摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

公开(公告)号：US20080280437A1

公开(公告)日：2008-11-13

申请号：US12091131

申请日：2007-06-22

申请人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

发明人： Takashi Tanaka ,  Kenichi Hara ,  Mitsuaki Iwashita

IPC分类号： H01L21/44 ,  B05B13/02 ,  B05C11/10

CPC分类号： H01L21/76849 ,  C23C18/1689 ,  C23C18/1834 ,  C23C18/50 ,  H01L21/288 ,  H01L21/67051 ,  H01L21/6723 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

摘要翻译： 通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。 电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。 后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.

公开(公告)号：US06423459B1

公开(公告)日：2002-07-23

申请号：US09717435

申请日：2000-11-21

申请人： Teruo Sasaki ,  Kenichi Hara ,  Yoichi Nakamura ,  Shinjirou Suzuki ,  Hideki Kina

发明人： Teruo Sasaki ,  Kenichi Hara ,  Yoichi Nakamura ,  Shinjirou Suzuki ,  Hideki Kina

IPC分类号： G03G506

CPC分类号： G03G5/0696

摘要： A photosensitive layer of an electrophotographic photoconductor has at least one phthalocyanine compound, wherein the photosensitive layer contains a metal phthalocyanine compound bonded by an o-phthalonitrile compound as a ligand. The o-phthalonitrile ligand is present in an amount from about 100 nmol to about 200 nmol with respect to 1 mol of the phthalocyanine. The resulting electrophotographic photoconductor exhibits a high potential retention rate. A method for making such an electrophotographic photoconductor is also disclosed wherein a photosensitive layer is formed by coating, with a coating layer, to obtain a photosensitive layer having a high potential retention rate.

摘要翻译： 电子照相感光体的感光层具有至少一种酞菁化合物，其中感光层含有通过邻苯二甲腈化合物作为配体键合的金属酞菁化合物。 邻苯二甲腈配体相对于1mol酞菁以约100nmol至约200nmol的量存在。 所得到的电子照相感光体表现出高的电位保持率。 还公开了制造这种电子照相感光体的方法，其中通过用涂层涂布形成感光层，以获得具有高电位保持率的感光层。

公开(公告)号：US4887662A

公开(公告)日：1989-12-19

申请号：US247691

申请日：1988-09-22

申请人： Shigenori Tanaka ,  Yasuo Itoh ,  Michiya Hayashida ,  Kenichi Hara ,  Keiichi Yamamoto ,  Hikotaro Itani ,  Atsumu Yamane ,  Akio Kasama ,  Isao Suichi ,  Hiroyuki Kajioka ,  Kunimasa Sasaki

发明人： Shigenori Tanaka ,  Yasuo Itoh ,  Michiya Hayashida ,  Kenichi Hara ,  Keiichi Yamamoto ,  Hikotaro Itani ,  Atsumu Yamane ,  Akio Kasama ,  Isao Suichi ,  Hiroyuki Kajioka ,  Kunimasa Sasaki

IPC分类号： B21B27/00 ,  B22D11/06

CPC分类号： B21B27/005 ,  B22D11/0651

摘要： A cooling drum for continuous-casting machines, for manufacturing thin metallic strips, and having a surface composing part of a casting mold wall in contact with molten metal, wherein the surface has numerous dimples disposed uniformly thereon and not in contact with each other, and each of the dimples has an opening portion in the form of a circle or an oval with a diameter of from 0.1 to 1.2 mm and a depth of from 5 to 100 .mu.m.