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    Group 3B nitride crystal substrate
    2.
    发明申请
    Group 3B nitride crystal substrate 有权
    3B族氮化物晶体基板

    公开(公告)号：US20110274609A1

    公开(公告)日：2011-11-10

    申请号：US13135829

    申请日：2011-07-15

    申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

    发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai ,  Takayuki Hirao

    IPC分类号： C01B21/06 ,  C30B19/04 ,  C30B19/02

    CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406

    摘要： A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

    摘要翻译： 根据本发明的13族氮化物晶体基板是通过利用通量法在种子晶体基板上生长13族氮化物晶体而制造的，其中在种籽晶的区域内生长的第13族氮化物晶体中的夹杂物的含量， 除了晶种基板的圆周部分以外，晶种基板的面积分数相对于晶种基板的整个面积为70％的区域为10％以下，优选为2％以下。

    METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL
    4.
    发明申请
    METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL 审中-公开
    生产第III族金属氮化物单晶的方法

    公开(公告)号：US20120111264A1

    公开(公告)日：2012-05-10

    申请号：US13344809

    申请日：2012-01-06

    申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai

    发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai

    IPC分类号： C30B9/04

    CPC分类号： H01L21/02639 ,  C30B9/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0265

    摘要： A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface 1b is 100 μm or more and 1 mm or less.

    摘要翻译： 属于III族的金属的氮化物的单晶的多个晶种膜形成在基板上，而在衬底上形成未被晶种膜覆盖的非生长表面。 属于III族的金属的氮化物的单晶生长在籽晶膜上。 多个晶种膜由非生长面分离，并且沿至少两个方向X和Y排列。晶种膜的最大内接圆直径“A”为50μm以上且6mm以下， 晶种膜的外接圆直径“B”为50μm以上且10mm以下，非生长面1b的最大内切圆直径“C”为100μm以上且1mm以下。

    Group 3B nitride crystal
    6.
    发明申请
    Group 3B nitride crystal 审中-公开
    3B族氮化物晶体

    公开(公告)号：US20110287222A1

    公开(公告)日：2011-11-24

    申请号：US13136056

    申请日：2011-07-21

    申请人： Takayuki Hirao ,  Makoto Iwai ,  Katsuhiro Imai

    发明人： Takayuki Hirao ,  Makoto Iwai ,  Katsuhiro Imai

    IPC分类号： C01B21/06 ,  B32B3/00

    CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  Y10T428/24355

    摘要： A sapphire substrate on a surface of which a thin film of gallium nitride is formed is prepared as a seed-crystal substrate and placed in a growth vessel. Gallium and sodium metals are weighed to achieve a molar ratio of 25 to 32:68 to 75 and added into the vessel. The vessel is put into a reaction vessel. An inlet pipe is connected to the reaction vessel. Nitrogen gas is introduced from a nitrogen tank through a pressure controller to fill the reaction vessel. While the internal pressure of the reaction vessel is controlled to be a predetermined nitrogen gas pressure and target temperatures are set such that the temperature of a lower heater is higher than the temperature of an upper heater, a gallium nitride crystal is grown. As a result, a group 13 nitride crystal having a large grain size and a low dislocation density is provided.

    摘要翻译： 制备其上形成有氮化镓薄膜的表面上的蓝宝石衬底作为晶种衬底并置于生长容器中。 称量镓和钠金属以达到25至32:68至75的摩尔比并加入容器中。 将容器放入反应容器中。 入口管连接到反应容器。 从氮气罐通过压力控制器引入氮气以填充反应容器。 当将反应容器的内部压力控制为预定的氮气压力并且设定目标温度使得下部加热器的温度高于上部加热器的温度时，生长氮化镓晶体。 结果，提供了具有大晶粒尺寸和低位错密度的13族氮化物晶体。

    Method and apparatus for producing group III nitride based compound semiconductor
    9.
    发明授权
    Method and apparatus for producing group III nitride based compound semiconductor 有权
    制备III族氮化物基化合物半导体的方法和装置

    公开(公告)号：US08123856B2

    公开(公告)日：2012-02-28

    申请号：US12225550

    申请日：2007-04-05

    申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B19/00 ,  C30B19/06

    CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

    摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

    摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 提供本发明的装置用于制造III族氮化物基化合物半导体。 该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于 将从外部容器外部至少含有氮气的气体进料到反应器中。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。