摘要:
A fluorescent display device comprising at least one phosphor screen composed of a mixture of a SnO.sub.2 :Eu phosphor with at least one of the cathodoluminescent phosphors having emission spectra and exitation properties different from SnO.sub.2 :Eu phosphor. This fluorescent display device emits light of different colors when driven at different voltages and at pulse voltages of different duty cycles. A display apparatus comprises such a fluorescent display device and a driving device with variable output voltage.
摘要:
An electroluminescense display device having a emission layer comprising zinc sulfide characterized in that at least one member selected from the group consisting of rare earth elements, manganese, copper, silver, magnesium, aluminum and their halides is contained as an activator, as well as at least one member selected from the group consisting of nitrogen, phosphorus, arsenic and antimony is contained as a coactivator. Said emission layer is formed by sputtering by using, as a target, zinc sulfide containing said activator and coactivator. Said sputtering is conducted in an atmosphere comprising a rare gas or rare gas containing a sulfide gas. The electroluminescence display device of the present invention has a higher brightness than conventional device with a good repeatability.
摘要:
In a thin film electroluminescent element comprising a phosphor thin film, a dielectric thin film disposed on at least one of the surfaces of the phosphor thin film and electrodes for applying a voltage across the thin films, the aforementioned dielectric thin film is formed of a dielectric material expressed by a general formula of AB.sub.2 O.sub.6 (where A represents a divalent metal element and B represents a pentavalent metal element). By employing the dielectric material, the voltage for driving a thin film electroluminescent element can be lowered without decreasing the brightness of the element. Further, by using a composite dielectric thin film in which the dielectric thin film expressed by the aforementioned general formula AB.sub.2 O.sub.6 is laminated with a dielectric thin film which is not susceptible to dielectric breakdown of self-healing type, the composite dielectric thin film is made susceptible to the dielectric breakdown of self-healing type. Additionally, the value of product of the dielectric breakdown field intensity and dielectric constant is increased to obtain a thin film electroluminescent element having excellent characteristics.
摘要:
An electroluminescent display device comprising an electroluminescent emitting layer including zinc oxide containing a luminescent active material, an insulating layer formed on one surface of the electroluminescent emitting layer and a pair of energizing means for applying signal voltages corresponding to an information to be displayed to a multilayer assembly including the said two layers, characterized in that a plurality of semiconductor layers each containing at least one chemical compound selected from the group consisting of chemical compounds of the II-VI groups and tin oxide are arranged as one of the energizing means arranged on the side of the electroluminescent emitting layer or between the energizing means arranged on the side of the electroluminescent emitting layer and the electroluminescent emitting layer. This device features that it requires only a reduced drive voltage for image displaying purposes and ensures an increased luminescent brightness.
摘要:
Electroluminescent display device suitable for ac and unipolar pulse voltage operation, and ensuring an increased luminescent brightness and a low driving voltage, comprises a transparent electrically insulating substrate; an electroluminescent layer comprised of zinc sulfide (ZnS) and at least one luminescingly active material; an electrically insulating layer formed on one surface of said electroluminescent layer; and first and second energizing means for applying signal voltages across said electroluminescent layer and said insulating layer corresponding to information to be displayed, wherein said first energizing means is interposed between said transparent substrate and said electroluminescent layer, and includes at least one semiconductive electrode which contacts said electroluminescent layer and is comprised of a semiconductive material containing at least one chemical compound selected from the group consisting of the chemical compounds of Groups II-VI, and wherein said second energizing means is arranged on said insulating layer on the surface thereof opposite said electroluminescent layer.
摘要:
A dielectric thin film element comprising a dielectric substrate and a dielectric thin film formed on the substrate. The thin film is made of a perovskite type oxide and formed by sputtering in an atmosphere containing nitrogen, by which the dielectric constant and the breakdown electric field strength are greatly improved. Thin film devices using the film and a method for making the thin film are also described.
摘要:
In a thin film EL display device wherein a transparent electrode, a first dielectric layer, an EL emission layer, a second dielectric layer and a back electrode are laminated in order on a transluscent substrate, a 10 nm-200 nm thickness of thin film made of calcium sulfide or a mixture containing calcium sulfide which is formed by an electron beam vapor deposition method provided between the first dielectric layer and the EL emission layer and between the EL emission layer and the second dielectric layer, thereby obtaining a thin film EL display device which maintains a stable operation for a long period even when it is driven by A.C. pulses which are a symmetric with respect to the time relationship of the driving pulses (e.g., the time period between the start of a positive pulse and the start of the subsequent negative pulse is different than the time period between the start of a negative pulse and the start of the subsequent positive pulse) or are different in amplitude in a positive side and a negative side.
摘要:
An electroluminescent display panel formed of phosphor and dielectric layers sandwiched between opposing mutually intersecting arrays of drive electrodes, has the thickness of the phosphor layer set to a value which provides minimum power consumption, for a given level of display brightness. This is achieved by determining a value of capacitance per unit area of the panel which results in a maximum allowable value of time being required to charge each display element, then determining a value of phosphor layer thickness providing minimum power consumption, using the latter value of capacitance and the known value of light emission efficiency of the display.
摘要:
A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.
摘要:
In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译:在电子发射器件中,用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂(本征)Al x Ga 1-x N(0 <= x <= 1)组成。 表面层由具有负电子亲和力(NEA)的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙,接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V,则Al x Ga 1-x N的带被弯曲,主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。