公开(公告)号：US4733128A

公开(公告)日：1988-03-22

申请号：US673557

申请日：1984-10-05

申请人： Takao Tohda ,  Yosuke Fujita ,  Masahiro Nishikawa ,  Tomizo Matsuoka ,  Atsushi Abe ,  Tsuneharu Nitta

发明人： Takao Tohda ,  Yosuke Fujita ,  Masahiro Nishikawa ,  Tomizo Matsuoka ,  Atsushi Abe ,  Tsuneharu Nitta

IPC分类号： C09K11/00 ,  C09K11/08 ,  C09K11/56 ,  G09F9/30 ,  G09F9/33 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14 ,  H05B33/18

CPC分类号： H05B33/14 ,  C09K11/565 ,  H05B33/10 ,  H05B33/18

摘要： An electroluminescense display device having a emission layer comprising zinc sulfide characterized in that at least one member selected from the group consisting of rare earth elements, manganese, copper, silver, magnesium, aluminum and their halides is contained as an activator, as well as at least one member selected from the group consisting of nitrogen, phosphorus, arsenic and antimony is contained as a coactivator. Said emission layer is formed by sputtering by using, as a target, zinc sulfide containing said activator and coactivator. Said sputtering is conducted in an atmosphere comprising a rare gas or rare gas containing a sulfide gas. The electroluminescence display device of the present invention has a higher brightness than conventional device with a good repeatability.

摘要翻译： PCT No.PCT / JP84 / 00036 Sec。 371日期1984年10月5日 102（e）日期1984年10月5日PCT提交1984年2月9日PCT公布。 第WO84 / 03099号公报 日本1984年8月16日。一种具有包含硫化锌的发射层的电致发光显示装置，其特征在于，含有选自稀土元素，锰，铜，银，镁，铝及其卤化物中的至少一种成分被包含为 含有活化剂，以及选自氮，磷，砷和锑中的至少一种作为共激活剂。 通过使用含有所述活化剂和共激活剂的硫化锌作为目标，通过溅射形成所述发射层。 所述溅射是在包含含有硫化物气体的稀有气体或稀有气体的气氛中进行的。 本发明的电致发光显示装置具有比具有良好重复性的常规装置更高的亮度。

公开(公告)号：US4547703A

公开(公告)日：1985-10-15

申请号：US576394

申请日：1984-01-26

申请人： Yosuke Fujita ,  Takao Tohda ,  Tomizo Matsuoka ,  Atsushi Abe ,  Tsuneharu Nitta

发明人： Yosuke Fujita ,  Takao Tohda ,  Tomizo Matsuoka ,  Atsushi Abe ,  Tsuneharu Nitta

IPC分类号： H01B3/12 ,  H05B33/22 ,  H05B33/12

CPC分类号： H05B33/22 ,  H01B3/12 ,  Y10S428/917

摘要： In a thin film electroluminescent element comprising a phosphor thin film, a dielectric thin film disposed on at least one of the surfaces of the phosphor thin film and electrodes for applying a voltage across the thin films, the aforementioned dielectric thin film is formed of a dielectric material expressed by a general formula of AB.sub.2 O.sub.6 (where A represents a divalent metal element and B represents a pentavalent metal element). By employing the dielectric material, the voltage for driving a thin film electroluminescent element can be lowered without decreasing the brightness of the element. Further, by using a composite dielectric thin film in which the dielectric thin film expressed by the aforementioned general formula AB.sub.2 O.sub.6 is laminated with a dielectric thin film which is not susceptible to dielectric breakdown of self-healing type, the composite dielectric thin film is made susceptible to the dielectric breakdown of self-healing type. Additionally, the value of product of the dielectric breakdown field intensity and dielectric constant is increased to obtain a thin film electroluminescent element having excellent characteristics.

摘要翻译： PCT No.PCT / JP83 / 00164 Sec。 371日期1984年1月26日 102（e）日期1984年1月26日PCT提交1983年5月26日PCT公布。 出版物WO83 / 04339 日本1983年12月8日。在包括荧光体薄膜的薄膜电致发光元件中，设置在荧光体薄膜的至少一个表面上的电介质薄膜和用于在薄膜上施加电压的电极，上述电介质 由通式AB 2 O 6（其中A表示二价金属元素，B表示五价金属元素）表示的电介质材料形成薄膜。 通过使用介电材料，可以降低用于驱动薄膜电致发光元件的电压而不降低元件的亮度。 此外，通过使用其中由上述通式AB 2 O 6表示的电介质薄膜与不易受自愈型电介质击穿的电介质薄膜层压的复合电介质薄膜，使复合电介质薄膜变得易受影响 对自愈型的介电击穿。 此外，提高介电击穿场强和介电常数的乘积值以获得具有优异特性的薄膜电致发光元件。

公开(公告)号：US4814668A

公开(公告)日：1989-03-21

申请号：US140867

申请日：1987-12-23

申请人： Takao Tohda ,  Tomizo Matsuoka ,  Yosuke Fujita ,  Atsushi Abe ,  Tsuneharu Nitta

发明人： Takao Tohda ,  Tomizo Matsuoka ,  Yosuke Fujita ,  Atsushi Abe ,  Tsuneharu Nitta

IPC分类号： G09F9/33 ,  H05B33/22

CPC分类号： H05B33/22 ,  G09F9/33

摘要： An electroluminescent display device comprising an electroluminescent emitting layer including zinc oxide containing a luminescent active material, an insulating layer formed on one surface of the electroluminescent emitting layer and a pair of energizing means for applying signal voltages corresponding to an information to be displayed to a multilayer assembly including the said two layers, characterized in that a plurality of semiconductor layers each containing at least one chemical compound selected from the group consisting of chemical compounds of the II-VI groups and tin oxide are arranged as one of the energizing means arranged on the side of the electroluminescent emitting layer or between the energizing means arranged on the side of the electroluminescent emitting layer and the electroluminescent emitting layer. This device features that it requires only a reduced drive voltage for image displaying purposes and ensures an increased luminescent brightness.

公开(公告)号：US4634934A

公开(公告)日：1987-01-06

申请号：US572415

申请日：1984-01-18

申请人： Takao Tohda ,  Tomizo Matsuoka ,  Yosuke Fujita ,  Atsushi Abe ,  Tsuneharu Nitta

发明人： Takao Tohda ,  Tomizo Matsuoka ,  Yosuke Fujita ,  Atsushi Abe ,  Tsuneharu Nitta

IPC分类号： G09F9/33 ,  H05B33/22 ,  H05B37/00

CPC分类号： H05B33/22 ,  G09F9/33

摘要： Electroluminescent display device suitable for ac and unipolar pulse voltage operation, and ensuring an increased luminescent brightness and a low driving voltage, comprises a transparent electrically insulating substrate; an electroluminescent layer comprised of zinc sulfide (ZnS) and at least one luminescingly active material; an electrically insulating layer formed on one surface of said electroluminescent layer; and first and second energizing means for applying signal voltages across said electroluminescent layer and said insulating layer corresponding to information to be displayed, wherein said first energizing means is interposed between said transparent substrate and said electroluminescent layer, and includes at least one semiconductive electrode which contacts said electroluminescent layer and is comprised of a semiconductive material containing at least one chemical compound selected from the group consisting of the chemical compounds of Groups II-VI, and wherein said second energizing means is arranged on said insulating layer on the surface thereof opposite said electroluminescent layer.

摘要翻译： PCT No.PCT / JP83 / 00146 Sec。 371日期1984年1月18日 102（e）日期1984年1月18日PCT提交1983年5月18日PCT公布。 公开号WO83 / 04123 日期：1983年11月24日。适用于交流和单极脉冲电压操作，确保增加发光亮度和低驱动电压的电致发光显示装置，包括透明电绝缘基板; 由硫化锌（ZnS）和至少一种发光活性物质组成的电致发光层; 形成在所述电致发光层的一个表面上的电绝缘层; 以及第一和第二激励装置，用于跨所述电致发光层和所述绝缘层跨越待显示的信息施加信号电压，其中所述第一激励装置介于所述透明基板和所述电致发光层之间，并且包括至少一个半导体电极， 所述电致发光层由包含至少一种选自II-VI族化合物的化合物的半导体材料组成，并且其中所述第二激发装置设置在与所述电致发光相反的表面上的所述绝缘层上 层。

公开(公告)号：US4888246A

公开(公告)日：1989-12-19

申请号：US866206

申请日：1986-05-23

申请人： Jun Kuwata ,  Yosuke Fujita ,  Takao Tohda ,  Atsushi Abe ,  Tomizo Matsuoka

发明人： Jun Kuwata ,  Yosuke Fujita ,  Takao Tohda ,  Atsushi Abe ,  Tomizo Matsuoka

IPC分类号： C23C14/08 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786

CPC分类号： H01L29/51 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28167 ,  H01L21/31691 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/78681

摘要： A dielectric thin film element comprising a dielectric substrate and a dielectric thin film formed on the substrate. The thin film is made of a perovskite type oxide and formed by sputtering in an atmosphere containing nitrogen, by which the dielectric constant and the breakdown electric field strength are greatly improved. Thin film devices using the film and a method for making the thin film are also described.

摘要翻译： 一种电介质薄膜元件，包括介电基片和形成在基片上的电介质薄膜。 该薄膜由钙钛矿型氧化物制成，并且在含有氮的气氛中通过溅射形成，从而大大提高介电常数和击穿电场强度。 还描述了使用该薄膜的薄膜装置和制造该薄膜的方法。

公开(公告)号：US4869973A

公开(公告)日：1989-09-26

申请号：US93263

申请日：1987-09-04

申请人： Masahiro Nishikawa ,  Takao Tohda ,  Jun Kuwata ,  Yosuke Fujita ,  Tomizo Matsuoka ,  Atsushi Abe

发明人： Masahiro Nishikawa ,  Takao Tohda ,  Jun Kuwata ,  Yosuke Fujita ,  Tomizo Matsuoka ,  Atsushi Abe

IPC分类号： H05B33/12 ,  H05B33/22

CPC分类号： H05B33/12 ,  H05B33/22 ,  Y10S428/917

摘要： In a thin film EL display device wherein a transparent electrode, a first dielectric layer, an EL emission layer, a second dielectric layer and a back electrode are laminated in order on a transluscent substrate, a 10 nm-200 nm thickness of thin film made of calcium sulfide or a mixture containing calcium sulfide which is formed by an electron beam vapor deposition method provided between the first dielectric layer and the EL emission layer and between the EL emission layer and the second dielectric layer, thereby obtaining a thin film EL display device which maintains a stable operation for a long period even when it is driven by A.C. pulses which are a symmetric with respect to the time relationship of the driving pulses (e.g., the time period between the start of a positive pulse and the start of the subsequent negative pulse is different than the time period between the start of a negative pulse and the start of the subsequent positive pulse) or are different in amplitude in a positive side and a negative side.

摘要翻译： 在透明电极，第一电介质层，EL发射层，第二电介质层和背面电极依次层叠在平坦化衬底上的薄膜EL显示器件中，制成10nm-200nm厚的薄膜 的硫化钙或含有硫化钙的混合物，其通过设置在第一介电层和EL发射层之间以及EL发射层和第二介电层之间的电子束气相沉积法形成，从而获得薄膜EL显示装置 即使在由驱动脉冲的时间关系对称的交流脉冲（例如，正脉冲的开始与后续的开始之间的时间段）驱动的情况下，也能够长时间保持稳定的动作 负脉冲与负脉冲的开始与后续的正脉冲的开始之间的时间段不同）或在posi中的幅度不同 积极面和负面。

公开(公告)号：US4847609A

公开(公告)日：1989-07-11

申请号：US101313

申请日：1987-09-24

申请人： Jun Kuwata ,  Yosuke Fujita ,  Takao Tohda ,  Masahiro Nishikawa ,  Tomizo Matsuoka ,  Atsushi Abe

发明人： Jun Kuwata ,  Yosuke Fujita ,  Takao Tohda ,  Masahiro Nishikawa ,  Tomizo Matsuoka ,  Atsushi Abe

IPC分类号： H05B33/08 ,  G09F9/30 ,  G09G3/30

CPC分类号： G09G3/30

摘要： An electroluminescent display panel formed of phosphor and dielectric layers sandwiched between opposing mutually intersecting arrays of drive electrodes, has the thickness of the phosphor layer set to a value which provides minimum power consumption, for a given level of display brightness. This is achieved by determining a value of capacitance per unit area of the panel which results in a maximum allowable value of time being required to charge each display element, then determining a value of phosphor layer thickness providing minimum power consumption, using the latter value of capacitance and the known value of light emission efficiency of the display.

摘要翻译： 由荧光体和电介质层构成的电致发光显示面板夹在相互相对的驱动电极阵列之间，对于给定的显示亮度，荧光体层的厚度设定为提供最小功耗的值。 这通过确定面板的每单位面积的电容值来实现，其导致对每个显示元件充电所需的时间的最大允许值，然后使用后面的值确定提供最小功耗的荧光体层厚度的值 电容和显示器的发光效率的已知值。

公开(公告)号：US4303913A

公开(公告)日：1981-12-01

申请号：US63701

申请日：1979-08-06

申请人： Takao Tohda ,  Tsuneharu Nitta ,  Yoji Fukuda ,  Tomizo Matsuoka ,  Ziro Terada

发明人： Takao Tohda ,  Tsuneharu Nitta ,  Yoji Fukuda ,  Tomizo Matsuoka ,  Ziro Terada

IPC分类号： C09K11/77 ,  H01J29/20 ,  H01J31/15 ,  G06F3/14

CPC分类号： C09K11/7729 ,  H01J29/20 ,  H01J31/15

摘要： A fluorescent display device comprising at least one phosphor screen composed of a mixture of a SnO.sub.2 :Eu phosphor with at least one of the cathodoluminescent phosphors having emission spectra and exitation properties different from SnO.sub.2 :Eu phosphor. This fluorescent display device emits light of different colors when driven at different voltages and at pulse voltages of different duty cycles. A display apparatus comprises such a fluorescent display device and a driving device with variable output voltage.

摘要翻译： 一种荧光显示装置，包括至少一个由SnO 2：Eu荧光粉与至少一种阴极发光荧光体的混合物构成的荧光屏，其具有不同于SnO 2：Eu荧光体的发射光谱和引发性质。 当在不同的电压和不同占空比的脉冲电压下驱动时，该荧光显示装置发射不同颜色的光。 显示装置包括这种荧光显示装置和具有可变输出电压的驱动装置。

公开(公告)号：US5381753A

公开(公告)日：1995-01-17

申请号：US55728

申请日：1993-04-30

申请人： Michio Okajima ,  Osamu Kusumoto ,  Takao Tohda ,  Kazuo Yokoyama ,  Motoshi Shibata

发明人： Michio Okajima ,  Osamu Kusumoto ,  Takao Tohda ,  Kazuo Yokoyama ,  Motoshi Shibata

IPC分类号： C30B29/62 ,  C30B11/00 ,  C30B11/12 ,  H01L29/06 ,  C30B23/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B29/60

摘要： A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.

摘要翻译： 制造方法提供了具有很少的载流子阱中心和光吸收水平的精细结构，并且在至少在二维平面内具有任意构型的量子线和量子盒中得到应用。 该制造方法包括以下步骤：将锋利的尖端保持在靠近基板1的表面并且具有构成从顶部蒸发的尖端的金属。 或者，提供包含在环境蒸气中的金属或由隧道电流等分解的溶液。 金属在衬底表面局部沉积。 通过气相 - 液相 - 固相反应在局部沉积区域上生长精细结晶的晶体。

公开(公告)号：US06350999B1

公开(公告)日：2002-02-26

申请号：US09449525

申请日：1999-11-29

申请人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

发明人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

IPC分类号： H01L310328

CPC分类号： H01J1/308

摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

摘要翻译： 在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。 表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。