摘要:
A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.
摘要:
A substrate treatment apparatus includes a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.
摘要:
First and second voltage buffers are added to an amplifying circuit including input and output amplifying stages in which a P-MOS transistor and an N-MOS transistor operate as a push-pull circuit. An input of the first voltage buffer is connected to an output of the amplifying circuit, and an output of the first voltage buffer is connected via a first phase compensating capacitor to a gate electrode of the P-MOS transistor, and is connected via a second phase compensating capacitor to a gate electrode of the N-MOS transistor. An input of the second voltage buffer is connected to the output of the amplifying circuit, and an output of the second voltage buffer is connected via a third phase compensating capacitor to the gate electrode of the P-MOS transistor, and is connected via a fourth phase compensating capacitor to the gate electrode of the N-MOS transistor.
摘要:
There is disclosed an invention for generating contract information for an image forming apparatus for which the user is going to conclude a contract. The history information of an image forming apparatus used by the user and having a contract history is stored and managed in correlation with the user. Such management is executed in a center server capable communication with the image forming apparatus through a predetermined communication channel. The above-mentioned information includes contract term, machine type, number of print outputs etc. of the image forming apparatus. Also the image forming apparatus to be managed includes that currently contracted and that contracted in the past. In case the user wishes to conclude a new contract for an image forming apparatus, new contract information is generated according to the history information managed by the center server in correlation with the user. This invention provides a system capable of realizing the foregoing.
摘要:
A crystal resonator with plural electrodes comprises a crystal piece, first, second and third pairs of electrodes. The crystal piece causes shear vibration. The first electrode pair is provided in the center of the crystal piece and coupled to a variable impedance. The second and third electrode pairs are provided on both sides of the first electrode pair. The second and third electrode pairs are electrically connected together and are coupled to an oscillation circuit.
摘要:
Disclosed are a magnesia-calcium oxide refractory product comprising (i) about 100 parts by weight of a refractory aggregate consisting essentially of about 20 to about 95% by weight of MgO and about 80 to about 5% by weight of CaO and (ii) about 0.5 to about 5 parts by weight of aragonite-type calcium carbonate, and a process for preparing the same.
摘要:
In an image processing apparatus, an image signal generator includes a ROM and a D/A converter. The ROM consists of gain conversion tables. A PWM signal generator includes a frequency divider, a flip-flop, an integrator, a voltage divider, and a comparator. The frequency divider is synchronized with the ROM in response to a sync selection signal. An output from the frequency divider is further frequency-divided by the flip-flop and then converted into a triangular wave signal by the integrator. The bias component of the triangular wave signal is adjusted by the voltage divider. The resultant signal supplied to one input terminal of the comparator is compared thereby with an output from the D/A converter, thereby obtaining a PWM signal. The peak and bottom values of the triangular wave signal are always matched with the maximum and minimum values of the output from the D/A converter.
摘要:
Provided are: a first entry preventing nail that interferes with a cartridge at a position closer to an insertion/extraction port than an insertion completed position of an insertion-side end face of the cartridge inserted first; a second entry preventing nail at a position with a space from the first entry preventing nail slightly longer than length of the cartridge, which allows entry of the cartridge and retreat of the first entry preventing nail at that position when a tapered face of the cartridge is at that position while preventing the entry of the cartridge and retreat of the first entry preventing nail at that position when the tapered face of the cartridge is not at that position; and a linkage module which allows advancing and retreating actions of the first and second entry preventing nails in a tradeoff relation.
摘要:
A non-halogen series floor material includes a first intermediate resin layer containing filler of 100 to 400 mass parts with respect to resin ingredient of 100 mass parts, the resin ingredient consisting essentially of resin having no chlorine atom in chemical structure, a surface resin layer integrally formed at an upper surface side of the first intermediate resin layer, the surface resin layer containing resin having no chloride atom in chemical structure and having a thickness of 100 to 1,000 μm, a second intermediate resin layer integrally formed at a lower surface side of the first intermediate resin layer, the second intermediate resin layer containing resin having no chloride atom in chemical structure and filler of 0 to 200 mass parts with respect to resin ingredient of 100 mass parts, and a backing layer integrally formed at a lower surface side of the second intermediate resin layer, the backing layer being formed of a fibrous fabric constituted by fibers containing resin having no chloride atom in chemical structure. A content ratio of the filler in the second intermediate resin layer with respect to the resin ingredient thereof is smaller than a content ratio of the filler in the first intermediate resin layer with respect to the resin ingredient thereof. A thickness of the second intermediate resin layer is 100 μm or more. A thickness of the second intermediate resin layer is 50% or less of a total thickness of three resin layers.