摘要:
A droplet ejection patterning method of ejecting a dispersion formed by dispersing a convectable dispersoid in a dispersion medium onto a substrate including a lyophilic region and a lyophobic region. Due to a concentration difference of the dispersion, the dispersoid convects within the dispersion medium toward the edges of the dispersion to form narrow lines of the dispersoid without using photolithography.
摘要:
The present invention provides a method that is capable of crystallizing a very small amount of solution arranged on a substrate at a predetermined position. By ejecting a solution prepared by dissolving a thin film forming material in a solvent using an ink jet method, droplets of the solution are arranged on the substrate. Crystalline nuclei are created in the solution by controlling a partial pressure of a gas made up of the same components as those of the solvent in the vicinity of the droplets immediately after being arranged to, e.g., a value equal to or substantially equal to the saturation vapor pressure. After creation of the crystalline nuclei, the partial pressure of the gas in the vicinity of the droplets is reduced.
摘要:
A patterning method comprising the steps of:the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; andthe second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment.A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.
摘要:
Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.; and forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.
摘要:
According to one embodiment, a medical image display apparatus includes a storage unit storing data of a three-dimensional image, a slice image generating unit generating three slice images associated with three slices from the three-dimensional image, a display unit displaying the three slice images respectively in three display areas, an ROI marker generating unit generating three ROI markers to be respectively superimposed on the displayed three slice images, the three ROI markers corresponding to a single ROI, an operation unit performing operation of changing relative positions between the three slice images and the three ROI markers, and a display control unit controlling move the three slice images in the three display areas in accordance with the operation of changing the relative positions and fix the three ROI markers at center positions of the three display areas.
摘要:
By reacting a β-hydroxy-α-amino acid with sulfuryl fluoride (SO2F2) in the presence of an organic base, it is possible to produce an α-fluoro-β-amino acid of the formula [2]. By using a C8-12 tertiary amine having two or more alkyl groups of C3 or higher, and especially diisopropylethylamine, as the organic base, by-production of quantery ammonium salts is effectively suppressed. By applying the production process of the present invention, it is possible to very easily produce (2R)-3-(dibenzylamino)-2-fluoropropionic acid methyl ester, which is extremely important as a pharmaceutical intermediate, with high positional selectivity even on an industrial scale.
摘要:
A porous electrolytic solution reservoir which is capable of being impregnated with an electrolytic solution is provided in an exterior case so as to make contact with a separator. The average diameter of the pores in the electrolytic solution reservoir is greater than the average diameter of pores in the separator. The electrolytic solution reservoir is impregnated with a predetermined amount of electrolytic solution, so that the occupation ratio of electrolytic solution within the pores in the separator becomes 50% or more when fully charged, and the occupation ratio of electrolytic solution within the pores in the electrolytic solution reservoir becomes 100% or less when fully discharged.
摘要:
Frequency characteristics of an optical low-pass filter (2) are set in such a way that a first false color passing rate indicative of the rate of frequency components passing through a frequency component region not lower than the Nyquist frequency fa for the lowest sampling frequency fs among the sampling frequencies in the longitudinal, the lateral, and the oblique directions for each color in an image sensor (5), i.e. a frequency component region lower than one half of the Nyquist frequency fs of the sampling frequency fs of the image sensor (5), is not higher than a specified value. An output image signal is created from a pixel signal created by the image sensor (5) so that N pixel signals (N is real number of 2 or above) created by the image sensor (5) correspond to one output image signal.
摘要:
A method of manufacturing a transistor includes disposing a droplet containing a bank material as a solute or a dispersoid on a substrate, drying the droplet to form a bank, ejecting a conductive material on a part of the bank to form a first conductive region and a second conductive region with the part of the bank interposed therebetween, removing the bank to form a groove between the first and second conductive regions, supplying a semiconductor material into the groove to form a semiconductor film, forming a gate insulating film on the semiconductor film, and forming a gate electrode at a position on the gate insulating film facing the semiconductor film.
摘要:
An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least one of surfaces of the pair of electrodes.