公开(公告)号：US09257273B2

公开(公告)日：2016-02-09

申请号：US13876274

申请日：2011-09-22

申请人： Yoshihiro Koyama ,  Anto Yasaka ,  Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

发明人： Yoshihiro Koyama ,  Anto Yasaka ,  Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

IPC分类号： H01L21/31 ,  H01L21/02 ,  H01J37/317 ,  C23C16/04 ,  C23C16/24 ,  C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/56 ,  H01L21/66 ,  H01L21/28 ,  H01L29/66

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

摘要翻译： 提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。 带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级 响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

公开(公告)号：US20130224889A1

公开(公告)日：2013-08-29

申请号：US13876274

申请日：2011-09-22

申请人： Yoshihiro Koyama ,  Anto Yasaka ,  Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

发明人： Yoshihiro Koyama ,  Anto Yasaka ,  Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

IPC分类号： H01L21/02

CPC分类号： H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

摘要翻译： 提供带电粒子束装置，其比使用氢化硅和卤化物作为源气体的常规沉积更快地实现半导体膜沉积。 带电粒子束装置包括带电粒子源1，聚光透镜电极2，消隐电极3，扫描电极4，其上安装有样品9的样品台10，二次带电粒子检测器8，其检测次级 响应于带电粒子束照射从样品9产生的带电粒子7，容纳环戊硅烷作为源气体的储存器14以及将源气体供应到样品9的气枪11。

公开(公告)号：US20120301731A1

公开(公告)日：2012-11-29

申请号：US13518986

申请日：2010-12-22

申请人： Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

发明人： Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

IPC分类号： H01L21/3205 ,  H01B1/06

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/288 ,  H01L29/665

摘要： The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2  (1A) SimX2m  (1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.

摘要翻译： 本发明涉及一种形成结晶硅化钴膜的方法，包括以下步骤：将由下式（1A）或（1B）表示的化合物混合得到的组合物施加到由硅制成的表面上：SinX2n + 2（1A）SimX2m（1B）其中式（1A）和（1B）中的每个X是氢原子或卤素原子，n是1至10的整数，m是3至10的整数，或 其与零价钴络合物的聚合物形成涂膜; 在550〜900℃下加热涂膜以形成由硅制成的表面上由结晶硅化钴构成的第一层和含有硅原子的第二层，氧原子， 碳原子和钴原子在第一层上; 并去除二层膜的第二层。

公开(公告)号：US20110158886A1

公开(公告)日：2011-06-30

申请号：US13003700

申请日：2009-07-09

申请人： Tatsuya Shimoda ,  Ryo Kawajiri ,  Kiyoshi Isobe ,  Hidetaka Nakai ,  Yasuo Matsuki

发明人： Tatsuya Shimoda ,  Ryo Kawajiri ,  Kiyoshi Isobe ,  Hidetaka Nakai ,  Yasuo Matsuki

IPC分类号： C01B33/04

CPC分类号： C08G77/60

摘要： A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4). SijH2j  (2) (in the formula (2), j is an integer of 3 to 10.) [CpM(μ-CH2)]2  (4) (in the formula (4), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)

摘要翻译： 一种聚硅烷制造方法，其特征在于，在下述式（4）表示的双核金属络​​合物的存在下，使由下式（2）表示的环状硅烷化合物为代表的特定硅烷化合物反应。 Sij H 2j（2）（式（2）中，j为3〜10的整数。）[CpM（μ-CH 2）] 2（4）（式（4）中，Cp为环戊二烯基系配体， M是选自Rh和Ir的金属原子，M's之间的键是双键。）

公开(公告)号：US20120064302A1

公开(公告)日：2012-03-15

申请号：US13263805

申请日：2010-04-09

申请人： Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri ,  Takashi Masuda ,  Toshihiko Kaneda

发明人： Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri ,  Takashi Masuda ,  Toshihiko Kaneda

IPC分类号： B32B3/30 ,  B05D3/12

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  C01B33/02 ,  C01B33/027 ,  C01B33/18 ,  C01P2004/01 ,  C01P2004/20 ,  C23C18/06 ,  C23C18/08 ,  C23C18/1208 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02623 ,  H01L21/02656 ,  H01L21/31 ,  Y10T428/24612

摘要： A patterning method comprising the steps of:the first step of disposing at least one silane compound selected from the group consisting of a silicon hydride compound and a silicon halide compound in the space between a substrate and a patterned mold; andthe second step of subjecting the silane compound to at least one treatment selected from a heat treatment and an ultraviolet exposure treatment.A pattern composed of silicon can be formed by carrying out the second step in an inert atmosphere or a reducing atmosphere and a pattern composed of silicon oxide can be formed by carrying out at least part of the second step in an oxygen-containing atmosphere.

摘要翻译： 一种图案化方法，包括以下步骤：在衬底和图案化模具之间的空间中设置选自由硅化合物和硅卤化物组成的组中的至少一种硅烷化合物的第一步骤; 以及对硅烷化合物进行选自热处理和紫外线曝光处理中的至少一种处理的第二步骤。 可以通过在惰性气氛或还原气氛中进行第二步骤形成由硅构成的图案，并且可以通过在含氧气氛中进行至少一部分第二步骤来形成由氧化硅组成的图案。

公开(公告)号：US20110184141A1

公开(公告)日：2011-07-28

申请号：US13003641

申请日：2009-07-09

申请人： Tatsuya Shimoda ,  Ryo Kawajiri ,  Kiyoshi Isobe ,  Hidetaka Nakai ,  Yasuo Matsuki

发明人： Tatsuya Shimoda ,  Ryo Kawajiri ,  Kiyoshi Isobe ,  Hidetaka Nakai ,  Yasuo Matsuki

IPC分类号： C08G77/60 ,  C08G79/00 ,  C08G85/00

CPC分类号： C08G77/60 ,  C07F7/0896

摘要： A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2). R4-nMHn  (1) (in the formula (1), R is a monovalent organic group, M is a silicon atom or a germanium atom, and n is 2 or 3.) [CpM(μ-CH2)]2  (2) (in the formula (2), Cp is a cyclopentadienyl-based ligand, M is a metal atom selected from Rh and Ir, and the bond between M's is a double bond.)

摘要翻译： 一种聚合物制备方法，包括在由下式（2）表示的双核金属络​​合物的存在下使由下式（1）表示的化合物反应。 R4-nMHn（1）（式（1）中，R为一价有机基团，M为硅原子或锗原子，n为2或3.）[CpM（μ-CH 2）] 2 ）（式（2）中，Cp为环戊二烯基配体，M为选自Rh和Ir的金属原子，M'之间的键为双键。）

公开(公告)号：US09653306B2

公开(公告)日：2017-05-16

申请号：US13518986

申请日：2010-12-22

申请人： Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

发明人： Tatsuya Shimoda ,  Yasuo Matsuki ,  Ryo Kawajiri

IPC分类号： B05D3/02 ,  H01L21/285 ,  H01L21/288 ,  H01L21/28 ,  H01L29/66

CPC分类号： H01L21/28518 ,  H01L21/28052 ,  H01L21/288 ,  H01L29/665

摘要： The present invention is directed to a method for forming a crystalline cobalt silicide film, comprising the steps of: applying to a surface made of silicon a composition obtained by mixing a compound represented by the following formula (1A) or (1B): SinX2n+2  (1A) SimX2m  (1B) wherein each X in the formulas (1A) and (1B) is a hydrogen atom or a halogen atom, n is an integer of 1 to 10, and m is an integer of 3 to 10, or a polymer thereof with a zero-valent cobalt complex to form a coating film; heating the coated film at 550 to 900° C. so as to form a two-layer film which is composed of a first layer made of a crystalline cobalt silicide on the surface made of silicon and a second layer containing silicon atoms, oxygen atoms, carbon atoms and cobalt atoms on the first layer; and removing the second layer of the two-layer film.