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    CONTROL APPARATUS AND CONTROL METHOD FOR VARIABLE MECHANISM
    3.
    发明申请
    CONTROL APPARATUS AND CONTROL METHOD FOR VARIABLE MECHANISM 审中-公开
    可变机械的控制装置和控制方法

    公开(公告)号：US20130085654A1

    公开(公告)日：2013-04-04

    申请号：US13704066

    申请日：2011-05-13

    申请人： Shunsuke Yamamoto ,  Takashi Nakagawa ,  Shunsuke Habara

    发明人： Shunsuke Yamamoto ,  Takashi Nakagawa ,  Shunsuke Habara

    IPC分类号： F01L13/00 ,  F02D13/02

    CPC分类号： F01L13/00 ,  F01L13/0015 ,  F01L13/0021 ,  F01L13/0063 ,  F01L2800/14 ,  F01L2820/032 ,  F02D13/02 ,  F02D41/221 ,  F02D41/2438 ,  F02D41/2464 ,  F02D2041/001 ,  F02D2041/228 ,  F02D2250/16 ,  Y02T10/18 ,  Y02T10/40

    摘要： In a control apparatus and a control method for a variable mechanism, when a predetermined condition is fulfilled, a movable member (3) is driven until an engagement portion (31) contacts one restriction member (22), and the absolute position of the movable member (3) when it is determined that displacement of the movable member (3) is stopped is learned, as a reference position. When supply of electric power is stopped, the absolute position of the movable member (3) is learned as an initial reference position. When electric power is supplied, the movable member (3) is driven from the initial reference position until the engagement portion (31) contacts the one restriction member (22), and a one-side displacement amount is calculated. If the one-side displacement amount is smaller than a one-side distance, it is determined that a foreign substance is caught in an area on a side of a site corresponding to the one restriction member (22) in a movable range.

    摘要翻译： 在可变机构的控制装置和控制方法中，当满足预定条件时，驱动可动件（3）直到接合部分（31）与一个限制件（22）接触，并且可移动件 当确定可移动构件（3）的位移被停止时，会获知构件（3）作为基准位置。 当电力供应停止时，可动构件（3）的绝对位置被认为是初始基准位置。 当供电时，可动构件（3）从初始基准位置被驱动，直到接合部分（31）与一个限制构件（22）接触，并且计算出单侧位移量。 如果单侧位移量小于单侧距离，则确定在可移动范围内异物被夹在与一个限制构件（22）相对应的位置的一侧的区域中。

    Control apparatus for variable valve actuation system and control method for variable valve actuation system
    4.
    发明授权
    Control apparatus for variable valve actuation system and control method for variable valve actuation system 有权
    用于可变气门驱动系统的控制装置和可变气门驱动系统的控制方法

    公开(公告)号：US08869759B2

    公开(公告)日：2014-10-28

    申请号：US13988628

    申请日：2011-11-22

    申请人： Takashi Nakagawa ,  Shunsuke Yamamoto

    发明人： Takashi Nakagawa ,  Shunsuke Yamamoto

    IPC分类号： F01L1/34 ,  F02D41/24 ,  F02D41/00 ,  F02D41/22 ,  F01L1/18

    CPC分类号： F01L1/34 ,  F01L2001/186 ,  F01L2800/00 ,  F01L2800/11 ,  F01L2820/032 ,  F02D41/0002 ,  F02D41/221 ,  F02D41/2438 ,  F02D41/2464 ,  F02D2041/001 ,  Y02T10/42

    摘要： In a variable valve actuation system capable of changing the angle of action of intake valves by using an actuator whose movement range is between a high end and a low end at which the movement of the actuator is mechanically stopped, it is determined that a fixation is present on condition that the actual amount of movement of the actuator in response to a command A for movement toward the low end that is issued when the present movement position of the actuator is unknown is not more than a prescribed movement criterion value a and that the actual amount of movement in response to a command B output subsequently to the command A in order to cause the actuator to operate in a direction opposite to the direction of the movement in response to the command B is not more than a prescribed movement criterion value b.

    摘要翻译： 在可变气门致动系统中，能够通过使用致动器来改变进气门的作用角度，该致动器的运动范围在致动器的运动被机械地停止的高端和低端之间，确定固定是 在执行器的当前移动位置未知时响应于朝向低端移动的命令A的致动器的实际移动量不大于规定的移动标准值a，并且 响应于随着命令A输出的命令B输出的响应于命令B使致动器沿与移动方向相反的方向操作的实际移动量不大于规定的移动标准值b 。

    CONTROL APPARATUS FOR VARIABLE VALVE ACTUATION SYSTEM AND CONTROL METHOD FOR VARIABLE VALVE ACTUATION SYSTEM
    5.
    发明申请
    CONTROL APPARATUS FOR VARIABLE VALVE ACTUATION SYSTEM AND CONTROL METHOD FOR VARIABLE VALVE ACTUATION SYSTEM 有权
    可变阀门执行系统控制装置及可变阀门执行系统控制方法

    公开(公告)号：US20130239918A1

    公开(公告)日：2013-09-19

    申请号：US13988628

    申请日：2011-11-22

    申请人： Takashi Nakagawa ,  Shunsuke Yamamoto

    发明人： Takashi Nakagawa ,  Shunsuke Yamamoto

    IPC分类号： F01L1/34

    CPC分类号： F01L1/34 ,  F01L2001/186 ,  F01L2800/00 ,  F01L2800/11 ,  F01L2820/032 ,  F02D41/0002 ,  F02D41/221 ,  F02D41/2438 ,  F02D41/2464 ,  F02D2041/001 ,  Y02T10/42

    摘要： In a variable valve actuation system capable of changing the angle of action of intake valves by using an actuator whose movement range is between a high end and a low end at which the movement of the actuator is mechanically stopped, it is determined that a fixation is present on condition that the actual amount of movement of the actuator in response to a command A for movement toward the low end that is issued when the present movement position of the actuator is unknown is not more than a prescribed movement criterion value a and that the actual amount of movement in response to a command B output subsequently to the command A in order to cause the actuator to operate in a direction opposite to the direction of the movement in response to the command B is not more than a prescribed movement criterion value b.

    摘要翻译： 在可变气门致动系统中，能够通过使用致动器来改变进气门的作用角度，该致动器的运动范围在致动器的运动被机械地停止的高端和低端之间，确定固定是 在执行器的当前移动位置未知时响应于朝向低端移动的命令A的致动器的实际移动量不大于规定的移动标准值a，并且 响应于随着命令A输出的命令B输出的响应于命令B使致动器沿与移动方向相反的方向操作的实际移动量不大于规定的移动标准值b 。

    Image recording apparatus in which a recorded content or output for which the confidentiality is required can be prevented from being visible to another user
    7.
    发明授权
    Image recording apparatus in which a recorded content or output for which the confidentiality is required can be prevented from being visible to another user 有权
    可以防止其中需要保密性的记录内容或输出对另一用户可见的图像记录装置

    公开(公告)号：US08570549B2

    公开(公告)日：2013-10-29

    申请号：US13050319

    申请日：2011-03-17

    申请人： Shunsuke Yamamoto

    发明人： Shunsuke Yamamoto

    IPC分类号： G06K15/00 ,  H04N1/60 ,  B41C1/00 ,  G03G15/02 ,  G03G15/00 ,  G03G21/00

    CPC分类号： B41J13/0036 ,  B65H31/24 ,  B65H2220/04 ,  B65H2511/412 ,  B65H2511/51 ,  B65H2511/515 ,  B65H2513/42 ,  G06F21/608 ,  B65H2220/01

    摘要： An image recording apparatus, including: a recording device; discharge trays; a discharge mechanism; detectors; an input device through which is inputted authentication information relating to image data; and a controller including: an image-data reception portion; an authentication-information confirming portion to make a confirmation as to whether the authentication information contains specific information; a confirmation-necessity judging portion to judge whether the confirmation by the confirming portion with respect to the image data is necessary; a selecting portion to select one discharge tray on which the recording medium is not placed, wherein, where the judging portion judges that the confirmation is necessary, the controller permits selection of the one discharge tray, controls the recording device to record the image based on the image data after the confirmation that the authentication information contains the specific information, and controls the discharge mechanism to discharge, to the selected one discharge tray, the image-recorded recording medium.

    摘要翻译： 一种图像记录装置，包括：记录装置; 卸料盘 排放机构; 探测器 输入设备，通过该输入设备输入与图像数据有关的认证信息; 以及控制器，包括：图像数据接收部分; 验证信息确认部分，用于确认认证信息是否包含特定信息; 确定必要性判断部分，用于判断是否需要由确认部分对图像数据的确认; 选择部分，用于选择其上没有放置记录介质的一个排出托盘，其中，在判断部分判断需要确认的情况下，控制器允许选择一个排出托盘，控制记录装置基于 确认认证信息包含特定信息之后的图像数据，并且控制排出机构排出到所选择的一个排出托盘，图像记录记录介质。

    Group III-V nitride semiconductor substrate and method for producing same
    8.
    发明申请
    Group III-V nitride semiconductor substrate and method for producing same 审中-公开
    III-V族氮化物半导体衬底及其制造方法

    公开(公告)号：US20090050915A1

    公开(公告)日：2009-02-26

    申请号：US12213391

    申请日：2008-06-18

    申请人： Shunsuke Yamamoto

    发明人： Shunsuke Yamamoto

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262

    摘要： A group III-V nitride semiconductor substrate includes a first region of group III-V nitride semiconductor crystal grown on a facet on a heterosubstrate, and a second region of the group III-V nitride semiconductor crystal grown on a plane with a predetermined plane orientation on the heterosubstrate. The first region has an area ratio of not more than 10% to the second region in a plane of the substrate. A method for producing a group III-V nitride semiconductor substrate includes a first crystal growth step of supplying a source gas of a group III-V nitride semiconductor onto a heterosubstrate at a first partial pressure to grow the group III-V nitride semiconductor on a plane with a predetermined plane orientation and a facet on the heterosubstrate, and a second crystal growth step of supplying onto the heterosubstrate the source gas at a second partial pressure higher than the first partial pressure to grow the semiconductor on the plane with the predetermined plane orientation and the facet after the first crystal growth step is conduced for a predetermined time period so as to suppress a crystal growth of the semiconductor on the facet.

    摘要翻译： III-V族氮化物半导体衬底包括在异质衬底上的小面上生长的III-V族氮化物半导体晶体的第一区域和在具有预定平面取向的平面上生长的III-V族氮化物半导体晶体的第二区域 在异基质上。 第一区域与衬底的平面中的第二区域的面积比不大于10％。 一种III-V族氮化物半导体衬底的制造方法包括：将第III-V族氮化物半导体的源极气体以第1分压供给到异质衬底上的第1晶体生长工序， 具有预定平面取向的平面和在异质基板上的刻面的第二晶体生长步骤和以高于第一分压的第二分压向异质底物供应源极气体以在预定平面取向的平面上生长半导体的第二晶体生长步骤 并且在第一晶体生长步骤之后的刻面被导通预定时间段，以便抑制半导体在该刻面上的晶体生长。

    Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
    9.
    发明授权
    Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace 失效
    用于生长化合物半导体单晶的炉子及其使用炉子生长的方法

    公开(公告)号：US07314518B2

    公开(公告)日：2008-01-01

    申请号：US11033986

    申请日：2005-01-13

    申请人： Michinori Wachi ,  Hiroshi Sasabe ,  Shunsuke Yamamoto

    发明人： Michinori Wachi ,  Hiroshi Sasabe ,  Shunsuke Yamamoto

    IPC分类号： C30B11/04

    CPC分类号： C30B35/002 ,  C30B27/00 ,  C30B29/42 ,  Y10T117/1092

    摘要： A crystal growth furnace for a compound semiconductor single crystal has: a small diameter section for placing a seed crystal therein; an increasing diameter section that has diameters to increase from the small diameter section to upward; and a constant diameter section that extends from the increasing diameter section to upward. The increasing diameter section has an angle of 120 degrees or more and less than 160 degrees between inner walls opposed to each other.

    摘要翻译： 用于化合物半导体单晶的晶体生长炉具有：用于将晶种放置在其中的小直径部分; 直径增大的部分，其直径从小直径部分向上增加; 以及从增加直径部向上延伸的恒定直径部。 增加的直径部分在彼此相对的内壁之间具有120度以上且小于160度的角度。