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    Process for Production of Composition
    3.
    发明申请
    Process for Production of Composition 有权
    组合物生产工艺

    公开(公告)号：US20080260624A1

    公开(公告)日：2008-10-23

    申请号：US11884393

    申请日：2005-02-25

    申请人： Yoshiaki Ikeda ,  Masami Kuwai ,  Shinji Ogama ,  Yukihiro Kuniyoshi ,  Kazuhisa Hidaka

    发明人： Yoshiaki Ikeda ,  Masami Kuwai ,  Shinji Ogama ,  Yukihiro Kuniyoshi ,  Kazuhisa Hidaka

    IPC分类号： C01G23/04 ,  C01G25/02

    CPC分类号： C01G23/00 ,  C01G23/006 ,  C01G25/00 ,  C01G27/00 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/12 ,  C01P2006/16 ,  C01P2006/17

    摘要： The invention provides a process for production of a composition comprising a perovskite structure compound, the process comprising: a first process to heat a hydrous oxide of at least one B group element selected from the group consisting of Ti, Zr, Hf, and Sn at a temperature within a range of 80 to 300° C. in the presence of an aqueous medium so as to dehydrate the hydrous oxide; and a second process to heat a reaction product obtained in the first process and a hydroxide of at least one A group element selected from the group consisting of Ba, Sr, Ca, Mg and Pb at a temperature within a range of 100 to 300° C. in the presence of an aqueous medium.The process provides a composition comprising an ABO3 compound in the form of uniform and fine spherical particles which have an average particle diameter of 1 μm or less, preferably within a range of 0.01 to 0.5 μm, high crystallinity, and a controlled A/B ratio as desired, as well as few internal pores in the crystalline particles.

    摘要翻译： 本发明提供一种生产包含钙钛矿结构化合物的组合物的方法，该方法包括：将选自Ti，Zr，Hf和Sn中的至少一种B族元素的含水氧化物加热到第一种方法 温度在80〜300℃的范围内，在水介质的存在下，使含水氧化物脱水; 以及在100〜300℃的温度范围内加热从第一工序得到的反应产物和选自Ba，Sr，Ca，Mg，Pb中的至少一种A族元素的氢氧化物的第二工序 在水介质的存在下。 该方法提供了包含平均粒径为1μm或更小，优选在0.01至0.5μm，高结晶度范围内的均匀和细小球形颗粒形式的ABO 3 N 3化合物的组合物 ，以及所需的受控A / B比，以及结晶颗粒中的少量内部孔。

    Process for production of composition
    4.
    发明授权
    Process for production of composition 有权
    组合物生产工艺

    公开(公告)号：US08431109B2

    公开(公告)日：2013-04-30

    申请号：US11884393

    申请日：2005-02-25

    申请人： Yoshiaki Ikeda ,  Masami Kuwai ,  Shinji Ogama ,  Yukihiro Kuniyoshi ,  Kazuhisa Hidaka

    发明人： Yoshiaki Ikeda ,  Masami Kuwai ,  Shinji Ogama ,  Yukihiro Kuniyoshi ,  Kazuhisa Hidaka

    IPC分类号： C01G23/00

    CPC分类号： C01G23/00 ,  C01G23/006 ,  C01G25/00 ,  C01G27/00 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2006/12 ,  C01P2006/16 ,  C01P2006/17

    摘要： The invention provides a process for production of a composition comprising a perovskite structure compound, the process comprising: a first process to heat a hydrous oxide of at least one B group element selected from the group consisting of Ti, Zr, Hf, and Sn at a temperature within a range of 80 to 300° C. in the presence of an aqueous medium so as to dehydrate the hydrous oxide; and a second process to heat a reaction product obtained in the first process and a hydroxide of at least one A group element selected from the group consisting of Ba, Sr, Ca, Mg and Pb at a temperature within a range of 100 to 300° C. in the presence of an aqueous medium.The process provides a composition comprising an ABO3 compound in the form of uniform and fine spherical particles which have an average particle diameter of 1 μm or less, preferably within a range of 0.01 to 0.5 μm, high crystallinity, and a controlled A/B ratio as desired, as well as few internal pores in the crystalline particles.

    摘要翻译： 本发明提供一种生产包含钙钛矿结构化合物的组合物的方法，该方法包括：将选自Ti，Zr，Hf和Sn中的至少一种B族元素的含水氧化物加热到第一种方法 温度在80〜300℃的范围内，在水介质的存在下，使含水氧化物脱水; 以及在100〜300℃的温度范围内加热从第一工序得到的反应产物和选自Ba，Sr，Ca，Mg，Pb中的至少一种A族元素的氢氧化物的第二工序 在水介质的存在下。 该方法提供了包含平均粒径为1μm或更小，优选在0.01至0.5μm，高结晶度和受控A / B比的均匀和细小球形颗粒形式的ABO 3化合物的组合物 根据需要，以及结晶颗粒中的少量内部孔。

    Lancet device for forming incision
    5.
    发明授权
    Lancet device for forming incision 有权
    用于成形切口的柳叶刀装置

    公开(公告)号：US07879058B2

    公开(公告)日：2011-02-01

    申请号：US11587539

    申请日：2005-04-22

    申请人： Yoshiaki Ikeda

    发明人： Yoshiaki Ikeda

    IPC分类号： A61B17/14 ,  A61B17/32 ,  A61B5/00

    CPC分类号： A61B5/15144 ,  A61B5/150022 ,  A61B5/150259 ,  A61B5/150465 ,  A61B5/150564 ,  A61B5/150618 ,  A61B5/150717 ,  A61B5/150916 ,  A61B5/15111 ,  A61B5/15117 ,  A61B5/15128

    摘要： An incision device capable of preventing inadvertent firing, and including a covered attached to the device. The incision device comprises a housing, and a lancet guide assembly having lancet guides and a lancet body. The lancet body further comprises a lancet blade. The lancet blade is covered by a removable protective cover having a stopper which prevents a trigger arm from being moved so as to fire the lancet blade.

    摘要翻译： 一种能够防止意外点燃的切口装置，并且包括附接到该装置的被覆盖部。 切口装置包括壳体和具有刺血针引导件和柳叶刀体的刺血针引导组件。 柳叶刀身还包括柳叶刀。 柳叶刀叶片被可移除的保护罩覆盖，该保护罩具有防止触发臂被移动以便触发柳叶刀刀片的止动器。

    Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure
    7.
    发明授权
    Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure 失效
    具有平面栅极，掩埋栅极或凹入栅极结构的反向导通晶闸管

    公开(公告)号：US5682044A

    公开(公告)日：1997-10-28

    申请号：US591420

    申请日：1996-01-19

    申请人： Takashige Tamamushi ,  Kimihiro Muraoka ,  Yoshiaki Ikeda ,  Keun Sam Lee ,  Naohiro Shimizu ,  Masashi Yura ,  Kinji Yoshioka

    发明人： Takashige Tamamushi ,  Kimihiro Muraoka ,  Yoshiaki Ikeda ,  Keun Sam Lee ,  Naohiro Shimizu ,  Masashi Yura ,  Kinji Yoshioka

    IPC分类号： H01L29/74 ,  H01L31/111

    CPC分类号： H01L29/7416

    摘要： The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits simultaneous formation of the both region and have high-speed performance and a RC thyristor of a buried-gate or recessed-gate structure which has a high breakdown voltage by the use of a buried-gate or recessed-gate structure, permits simultaneous formation of thyristor and diode regions and high-speed, high current switching performance, and the RC thyristor of the planar-gate structure has a construction which comprises an SI thyristor or miniaturized GTO of a planar-gate structure in the thyristor region and an SI diode of a planar structure in the diode region, the diode region having at its cathode side a Schottky contact between n emitters or diode cathode shorted region and the thyristor region having at its anode side an SI anode shorted structure formed by p.sup.+ anode layers, wave-shaped anode layers or anode n.sup.+ layers; in the case of a high breakdown device, an n buffer layer is added; similarly the RC thyristor of the buried-gate or recessed-gate structure has a construction which comprises an SI thyristor of a buried-gate or recessed-gate structure at the thyristor region and an SI diode of the buried or recessed structure.

    摘要翻译： 本发明提供了一种用于中低功率使用的平面栅极结构的反向导通（RC）晶闸管，由于采用晶体管和二极管区域中的每一个的平面结构，其结构相对简单，允许同时形成 具有高速性能和通过使用掩埋栅极或凹入栅极结构具有高击穿电压的掩埋栅极或凹入栅极结构的RC晶闸管，允许同时形成晶闸管和二极管区域 和高速，高电流开关性能，并且平面栅极结构的RC晶闸管具有在晶闸管区域中包括SI晶闸管或平面栅极结构的小型化GTO以及平面结构的SI二极管的结构 二极管区域，二极管区域在其阴极侧具有n个发射极或二极管阴极短路区域之间的肖特基接触，并且在其阳极侧具有SI a的晶闸管区域 由p +阳极层，波形阳极层或阳极n +层形成的短路结构; 在高击穿装置的情况下，添加n缓冲层; 类似地，埋入栅极或凹入栅极结构的RC晶闸管具有包括在晶闸管区域处的掩埋栅极或凹入栅极结构的SI晶闸管和埋入或凹陷结构的SI二极管的结构。

    Numerical control apparatus and method for controlling a machine
    8.
    发明授权
    Numerical control apparatus and method for controlling a machine 失效
    用于控制机器的数控装置和方法

    公开(公告)号：US5583409A

    公开(公告)日：1996-12-10

    申请号：US531203

    申请日：1995-09-19

    申请人： Mitsuo Kurakake ,  Yoshiaki Ikeda

    发明人： Mitsuo Kurakake ,  Yoshiaki Ikeda

    IPC分类号： G05B19/409 ,  G05B19/4093 ,  G05B19/41

    CPC分类号： G05B19/409 ,  G05B2219/35433

    摘要： A numerical control apparatus allows a portion of a prototype or the like to be easily machined without an operator being concerned with a coordinate system, origins, and other data. A guidance function executing unit displays guidance information on a display unit. According to the displayed guidance information, the operator enters machining commands using a keyboard, etc. A pulse distributing unit sends present positions from present position registers to the guidance function executing unit. The guidance function executing unit calculates a movement command from command values commanded by the operator and the present positions, and sends the calculated movement command to the pulse distributing unit, which outputs distributed pulses to drive the machine tool.

    摘要翻译： 数字控制装置允许在没有操作者关心坐标系，起点和其他数据的情况下容易地加工原型等的一部分。 引导功能执行单元在显示单元上显示引导信息。 根据显示的引导信息，操作员使用键盘等输入加工命令。脉冲分配单元将当前位置从当前位置寄存器发送到引导功能执行单元。 引导功能执行单元从由操作者指令的命令值和当前位置计算移动指令，并将所计算的移动命令发送到脉冲分配单元，该脉冲分配单元输出分配脉冲以驱动机床。

    Programmable controller with modifiable ladder program
    9.
    发明授权
    Programmable controller with modifiable ladder program 失效
    具有可修改梯形图程序的可编程控制器

    公开(公告)号：US5168442A

    公开(公告)日：1992-12-01

    申请号：US460100

    申请日：1990-02-09

    申请人： Yoshiaki Ikeda ,  Mitsuru Kuwasawa

    发明人： Yoshiaki Ikeda ,  Mitsuru Kuwasawa

    IPC分类号： G05B19/05 ,  G05B19/414

    CPC分类号： G05B19/056 ,  G05B19/4147 ,  G05B2219/36108

    摘要： A programmable controller according to the present invention is for reinforcing the function of a programmable machine controller (PMC) of a numerical control unit (CNC) incorporating a minicomputer. In order to achieve high-speed processing of a PMC ladder program which implements auxiliary control functions for machining inclusive of tool-change control, control of the rotational speed of a spindle and workpiece-change control, the programmable controller is provided with an electrically rewritable programmable read-only memory (EEPROM) (6), and a random-access memory (RAM) (7) to which program data is transferred from the EEPROM (6), and the arrangement is such that the contents of the EEPROM (6) are rewritten before the data transfer.

    摘要翻译： PCT No.PCT / JP89 / 00610 Sec。 371日期1990年2月9日 102（e）1990年2月9日PCT PCT 1991年6月19日PCT公布。 出版物WO90 / 00763 1990年1月25日。根据本发明的可编程控制器用于加强结合小型计算机的数控单元（CNC）的可编程机器控制器（PMC）的功能。 为了实现PMC梯形图程序的高速处理，其实现了包括刀具更换控制在内的加工辅助控制功能，控制主轴转速和工件更换控制，可编程控制器具有电可重写 可编程只读存储器（EEPROM）（6）和从EEPROM（6）向其传送程序数据的随机存取存储器（RAM）（7），并且所述EEPROM（6）的内容 ）在数据传输之前被重写。

    Method for removing alkali metal compound from crude high-molecular weight substance
    10.
    发明授权
    Method for removing alkali metal compound from crude high-molecular weight substance 失效
    从粗分子量物质中除去碱金属化合物的方法

    公开(公告)号：US5098993A

    公开(公告)日：1992-03-24

    申请号：US616270

    申请日：1990-11-20

    申请人： Norio Kawanami ,  Yoshiaki Ikeda ,  Yoshio Tomishima

    发明人： Norio Kawanami ,  Yoshiaki Ikeda ,  Yoshio Tomishima

    IPC分类号： B01D11/04 ,  C08F6/28 ,  C08G65/30 ,  C08G65/46

    CPC分类号： C08F6/28 ,  C08G65/30

    摘要： A method for purifying a crude high-molecular weight substance containing an alkali metal compound by extracting the alkali metal compound with water is disclosed, which comprises stirring a mixture comprising said crude high-molecular weight substance and water in a high-speed stirring tank to extract the alkali metal compound into an aqueous phase and separating the high-molecular weight substance phase and the aqueous phase from each other by continuous centrifugation. An alkali metal compound as an impurity can be efficiently removed with small-sized equipment in a short time.

    摘要翻译： 公开了一种通过用水提取碱金属化合物来纯化含有碱金属化合物的粗分子量物质的方法，该方法包括在高速搅拌槽中将包含所述粗分子量物质和水的混合物搅拌至 将碱金属化合物提取到水相中，并通过连续离心分离高分子量物质相和水相。 可以在短时间内用小型设备有效地除去作为杂质的碱金属化合物。