公开(公告)号：US08821750B2

公开(公告)日：2014-09-02

申请号：US12527607

申请日：2008-02-22

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

IPC分类号： C09G1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/304 ,  H01L21/306

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C23F1/18 ,  C23F1/26 ,  H01L21/30625 ,  H01L21/3212

摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

摘要翻译： 本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。 使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度高的金属研磨浆料，并且抛光面的平坦度高。 这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

公开(公告)号：US08609541B2

公开(公告)日：2013-12-17

申请号：US12667154

申请日：2008-07-04

申请人： Takaaki Tanaka ,  Masato Fukasawa ,  Shigeru Nobe ,  Takafumi Sakurada ,  Takashi Shinoda

发明人： Takaaki Tanaka ,  Masato Fukasawa ,  Shigeru Nobe ,  Takafumi Sakurada ,  Takashi Shinoda

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/7684 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/76819

摘要： Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.

摘要翻译： 提供了用于金属膜的抛光浆料和抑制侵蚀和接缝的产生的抛光方法，并且使得用其抛光的表面的平坦度或因此高。 浆料和方法是研磨浆料，对于包含磨料颗粒，甲基丙烯酸类聚合物和水的金属膜和分别使用该浆料的抛光方法。

公开(公告)号：US07399178B2

公开(公告)日：2008-07-15

申请号：US11280253

申请日：2005-11-17

申请人： Takashi Shinoda ,  Yoshimasa Makino

发明人： Takashi Shinoda ,  Yoshimasa Makino

IPC分类号： B29C45/48

CPC分类号： B29C45/53 ,  B29C45/17

摘要： In an injection device 10 having a plunger 11 reciprocably inserted into a heating cylinder 16, in which a molten material M is injected by the plunger 11 via a nozzle 21, a sealing portion 13 set so that the molten material M is prevented from easily entering a gap A between the plunger 11 and an inner wall 32 of the heating cylinder 16 is provided on the portion of the plunger 11, on the side of the nozzle 21, and the portion of the sealing portion 13, on the side of the nozzle 21 is a core keeping portion 14 provided so that an annular portion 20 which is formed on a front portion of the plunger 11 and is connected to a storage portion 19 of the molten material M is formed between the core keeping portion 14 and the inner wall 32 of the heating cylinder 16.

摘要翻译： 在具有往复插入到加热缸16中的柱塞11的注射装置10中，其中通过喷嘴21由柱塞11注入熔融材料M，密封部13被设定成使得熔融材料M被阻止容易地进入 柱塞11和加热缸16的内壁32之间的间隙A设置在柱塞11的喷嘴21侧，部分密封部13的喷嘴侧 图21所示的芯部保持部14被设置成使得形成在柱塞11的前部并连接到熔融材料M的容纳部分19的环形部分20形成在芯保持部分14和内壁 32。

公开(公告)号：US5719815A

公开(公告)日：1998-02-17

申请号：US503738

申请日：1995-07-18

申请人： Yasushi Takahashi ,  Takashi Shinoda ,  Masamichi Ishihara ,  Tetsu Udagawa ,  Kazumasa Yanagisawa

发明人： Yasushi Takahashi ,  Takashi Shinoda ,  Masamichi Ishihara ,  Tetsu Udagawa ,  Kazumasa Yanagisawa

IPC分类号： G11C7/00 ,  G11C7/06 ,  G11C11/406

CPC分类号： G11C7/06 ,  G11C11/406

摘要： An ordinary read/write operation (normal operation) and a refresh operation are separated from one another and the number of read amplification circuits or, in other words, the number of sense amplifiers operating during the normal operation is made smaller than that during the refresh operation. Accordingly, a bit line charge/discharge current during the normal operation can be reduced.

摘要翻译： 普通的读/写操作（正常操作）和刷新操作彼此分离，并且读取的放大电路的数量，或者换句话说，使得在正常操作期间操作的读出放大器的数量小于刷新期间的读出放大器的数量 操作。 因此，可以减少正常工作期间的位线充电/放电电流。

公开(公告)号：US5546522A

公开(公告)日：1996-08-13

申请号：US197194

申请日：1994-02-16

申请人： Tetsuro Nishida ,  Takashi Shinoda

发明人： Tetsuro Nishida ,  Takashi Shinoda

IPC分类号： G06F3/14 ,  G06F3/048 ,  G06F9/06 ,  G06F9/44 ,  G06F15/00

CPC分类号： G06F8/38

摘要： An optimal menu inquiry system includes a skeleton data generating means, a tree structure data constructing means, a menu display means, a control means, and a menu candidate determining means. The skeleton data generating means generates inquiries, from a rule description describing the context of the inquiries, as skeleton data by sequentially linking the inquiries, from the first inquiry to the subsequent inquiries, in the form of a tree structure. The tree structure data constructing means constructs and updates tree structure data by sequentially retracing the skeleton data from first data. The menu display means displays menu items corresponding to constructed/updated tree structure data. The control means controls the tree structure data constructing means to update the tree structure data when one of the menu items displayed by the menu display means is selected. The menu candidate determining means evaluates an evaluable expression in the skeleton data by referring to the updated structure data, and determines menu item candidates to be displayed by the menu display means.

摘要翻译： 最佳菜单查询系统包括骨架数据生成装置，树结构数据构成装置，菜单显示装置，控制装置和菜单候选确定装置。 骨架数据生成装置通过以树结构的形式从第一查询到后续查询顺序地连接查询，从描述查询的上下文的规则描述生成查询。 树结构数据构造装置通过从第一数据顺序地回溯骨架数据来构建和更新树结构数据。 菜单显示装置显示与构造/更新的树结构数据相对应的菜单项。 当选择由菜单显示装置显示的菜单项之一时，控制装置控制树结构数据构造装置来更新树结构数据。 菜单候选确定装置通过参考更新的结构数据来评估骨架数据中的可评估表达，并且确定要由菜单显示装置显示的菜单项候选。

公开(公告)号：US4771406A

公开(公告)日：1988-09-13

申请号：US40848

申请日：1987-04-21

申请人： Kanji Oishi ,  Takashi Shinoda

发明人： Kanji Oishi ,  Takashi Shinoda

IPC分类号： G11C11/403 ,  G11C11/34 ,  G11C11/406 ,  G11C7/00

CPC分类号： G11C11/34 ,  G11C11/406

摘要： A semiconductor integrated circuit device which constitutes a dynamic RAM has an automatic refresh circuit that contains a refresh timer circuit. The refresh timer circuit has a program element such as a fuse element. The program element is programmed depending upon the data holding characteristics of the dynamic memory cells. Therefore, the refresh period is changed depending upon the characteristics of the dynamic memory cells. According to this construction, the refresh period changes and, as a result, any undesired refresh operation is prevented from being executed, making it possible to reduce the amount of electric power consumed by the circuit device.

公开(公告)号：US08845915B2

公开(公告)日：2014-09-30

申请号：US13201518

申请日：2010-01-22

申请人： Hiroshi Ono ,  Takashi Shinoda ,  Yuuhei Okada

发明人： Hiroshi Ono ,  Takashi Shinoda ,  Yuuhei Okada

IPC分类号： C03C15/00 ,  H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  C09K3/14

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/7684 ,  H01L21/76898

摘要： A polishing agent which comprises a composition containing an inorganic acid, an amino acid, a protective film-forming agent, an abrasive, an oxidizing agent, an organic acid and water, adjusted to a pH of 1.5-4, wherein the amount of potassium hydroxide required to raise the pH of the composition without the organic acid to 4 is at least 0.10 mol with respect to 1 kg of the composition without the organic acid, and the organic acid contains at least two carboxyl groups, wherein the logarithm of the inverse of the first acid dissociation constant (pKa1) is no greater than 3.

摘要翻译： 一种抛光剂，其包含调节至pH为1.5-4的无机酸，氨基酸，保护膜形成剂，研磨剂，氧化剂，有机酸和水的组合物，其中钾的量 相对于1kg不含有机酸的组合物，无机有机物将组合物的pH升高至4所需的氢氧化物为至少0.10mol，有机酸含有至少两个羧基，其中反相的对数 的第一个酸解离常数（pKa1）不大于3。

公开(公告)号：US20130260558A1

公开(公告)日：2013-10-03

申请号：US13884883

申请日：2011-12-22

申请人： Munehiro Oota ,  Takaaki Tanaka ,  Toshio Takizawa ,  Shigeru Yoshikawa ,  Takaaki Matsumoto ,  Takahiro Yoshikawa ,  Takashi Shinoda

发明人： Munehiro Oota ,  Takaaki Tanaka ,  Toshio Takizawa ,  Shigeru Yoshikawa ,  Takaaki Matsumoto ,  Takahiro Yoshikawa ,  Takashi Shinoda

IPC分类号： H01L21/306

CPC分类号： H01L21/31055 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053

摘要： Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

摘要翻译： 本发明提供一种包括氧化铈颗粒，有机酸A，具有羧酸基或羧酸酯基的高分子化合物B和水的抛光液，其中有机酸A具有至少一个选自-COOM 基团-Ph-OM基团，-SO 3 M基团和-PO 3 M 2基团，有机酸A的pKa小于9，有机酸A的含量相对于研磨液的总质量为0.001〜1质量％ ，相对于研磨液的总质量，高分子化合物B的含量为0.01〜0.50质量％，pH为4.0〜7.0。

公开(公告)号：US20120299158A1

公开(公告)日：2012-11-29

申请号：US13265926

申请日：2010-12-10

申请人： Takashi Shinoda ,  Kazuhiro Enomoto ,  Toshiaki Akutsu

发明人： Takashi Shinoda ,  Kazuhiro Enomoto ,  Toshiaki Akutsu

IPC分类号： C09K13/00 ,  H01L29/02 ,  H01L21/304 ,  C09K13/06 ,  H01L21/306

CPC分类号： C09K3/1472 ,  C09G1/02 ,  H01L21/31053

摘要： The CMP polishing liquid of the invention is used by mixing a first solution and a second solution, the first solution comprises cerium-based abrasive grains, a dispersant and water, the second solution comprises a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, the pH of the second solution is 6.5 or higher, and the first solution and second solution are mixed so that the phosphoric acid compound content is within a prescribed range. The CMP polishing liquid of the invention comprises cerium-based abrasive grains, a dispersant, a polyacrylic acid compound, a surfactant, a pH regulator, a phosphoric acid compound and water, with the phosphoric acid compound content being within a prescribed range.

摘要翻译： 本发明的CMP抛光液通过混合第一溶液和第二溶液来使用，第一溶液包括铈基磨料颗粒，分散剂和水，第二溶液包含聚丙烯酸化合物，表面活性剂，pH调节剂， 磷酸化合物和水，第二溶液的pH为6.5以上，第一溶液和第二溶液混合，使得磷酸化合物含量在规定范围内。 本发明的CMP抛光液含有磷酸化合物含量在规定范围内的铈系磨粒，分散剂，聚丙烯酸化合物，表面活性剂，pH调节剂，磷酸化合物和水。

公开(公告)号：US20100120250A1

公开(公告)日：2010-05-13

申请号：US12527607

申请日：2008-02-22

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C23F1/18 ,  C23F1/26 ,  H01L21/30625 ,  H01L21/3212

摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

摘要翻译： 本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。 使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度大的金属研磨浆料，并且抛光面的平坦度高。 这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。