公开(公告)号：US06620641B2

公开(公告)日：2003-09-16

申请号：US10172839

申请日：2002-06-17

申请人： Takashi Yamaguchi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Takashi Kobayashi ,  Tsunenori Asatsuma ,  Takeharu Asano ,  Tomonori Hino

发明人： Takashi Yamaguchi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Takashi Kobayashi ,  Tsunenori Asatsuma ,  Takeharu Asano ,  Tomonori Hino

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2231

摘要： A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

公开(公告)号：US06838703B2

公开(公告)日：2005-01-04

申请号：US10779236

申请日：2004-02-13

申请人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

发明人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

IPC分类号： H01S5/223 ,  H01L33/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a second electrode 30 which are consecutively stacked, the second cladding layer 24 comprises a lower layer 24A and an upper layer 24B, the first cladding layer 14, the active layer 20 and the lower layer 24A of the second cladding layer have a mesa structure, the upper layer 24B of the second cladding layer and the second contacting layer 26 have a ridge structure, an insulating layer 40 covering at least part of each of both side surfaces of the upper layer 24B of the second cladding layer is formed on the portions of the lower layer 24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer 42 having substantially the same width as the mesa structure is formed on the top surface of the insulating layer 40 and the top surface of the second electrode 30 such that the metal layer 42 continues from one top surface to the other.

摘要翻译： 氮化物系半导体激光装置10具有包括第一接触层14，第一包层16，有源层20，第二包层24，第二接触层26和第二电极30的层叠结构，第一接触层14，第二包层24，第二接触层26和第二电极30 第二包覆层24包括下层24A和上层24B，第二包覆层的第一包层14，有源层20和下层24A具有台面结构，第二包层的上层24B 层和第二接触层26具有脊状结构，在第二包层的下层24A的部分上形成有覆盖第二包层的上层24B的两个侧面的至少一部分的至少一部分的绝缘层40 层，这些部分对应于台面结构的顶表面，此外，具有与台面结构基本相同的宽度的金属层42形成在绝缘层1a的顶表面上 yer 40和第二电极30的顶表面，使得金属层42从一个顶表面延伸到另一个顶表面。

公开(公告)号：US06784010B2

公开(公告)日：2004-08-31

申请号：US10275497

申请日：2002-11-06

申请人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

发明人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a second electrode 30 which are consecutively stacked, the second cladding layer 24 comprises a lower layer 24A and an upper layer 24B, the first cladding layer 14, the active layer 20 and the lower layer 24A of the second cladding layer have a mesa structure, the upper layer 24B of the second cladding layer and the second contacting layer 26 have a ridge structure, an insulating layer 40 covering at least part of each of both side surfaces of the upper layer 24B of the second cladding layer is formed on the portions of the lower layer 24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer 42 having substantially the same width as the mesa structure is formed on the top surface of the insulating layer 40 and the top surface of the second electrode 30 such that the metal layer 42 continues from one top surface to the other.

摘要翻译： 氮化物系半导体激光装置10具有包括第一接触层14，第一包层16，有源层20，第二包覆层24，第二接触层26和第二电极30的层叠结构， 第二包覆层24包括下层24A和上层24B，第二包覆层的第一包层14，有源层20和下层24A具有台面结构，第二包层的上层24B 层和第二接触层26具有脊状结构，在第二包层的下层24A的部分上形成有覆盖第二包层的上层24B的两个侧面的至少一部分的至少一部分的绝缘层40 层，这些部分对应于台面结构的顶表面，此外，具有与台面结构基本相同的宽度的金属层42形成在绝缘层1a的顶表面上 yer 40和第二电极30的顶表面，使得金属层42从一个顶表面延伸到另一个顶表面。

公开(公告)号：US5898662A

公开(公告)日：1999-04-27

申请号：US967095

申请日：1997-11-10

申请人： Akira Ishibashi ,  Satoshi Taniguchi ,  Tomonori Hino ,  Takashi Kobayashi ,  Kazushi Nakano ,  Norikazu Nakayama

发明人： Akira Ishibashi ,  Satoshi Taniguchi ,  Tomonori Hino ,  Takashi Kobayashi ,  Kazushi Nakano ,  Norikazu Nakayama

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/28 ,  H01S5/042 ,  H01S5/32 ,  H01S5/327 ,  H01S5/347 ,  H01S3/18

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/025 ,  H01S5/347 ,  H01S2301/173 ,  H01S5/0421 ,  H01S5/3203 ,  H01S5/327

摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.

摘要翻译： 一种半导体发光器件包括：化合物半导体衬底; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 有源层上的p型覆层和p型覆层的p型接触层，n型包覆层，有源层，p型包覆层和p型接触层 由含有选自Zn，Cd，Mg，Hg和Be中的II族元素中的至少一种的II-VI化合物半导体和选自S，Se，Te中的至少一种VI族元素中的至少一种 和O，其特征在于至少所述活性层具有起伏并且至少所述p型层是平坦的。 一种半导体发光器件的制造方法，其具有：化合物半导体基板; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 和p型包覆层，n型包覆层，有源层和p型覆层由含有选自以下的II族元素中的至少一种的II-VI族化合物半导体构成： 的Zn，Cd，Mg，Hg和Be以及选自S，Se，Te和O的VI族元素中的至少一种，其特征在于，所述n型包覆层，所述有源层和所述p型 通过对于各层改变VI族元素的分子束强度相对于II族元素的分子束强度的比例，生长包覆层。

公开(公告)号：US10077485B2

公开(公告)日：2018-09-18

申请号：US14409549

申请日：2012-06-27

申请人： Takashi Kobayashi ,  Nobuyuki Nakamura ,  Yoshimasa Funakawa

发明人： Takashi Kobayashi ,  Nobuyuki Nakamura ,  Yoshimasa Funakawa

IPC分类号： C22C38/26 ,  C21D6/00 ,  C22C38/00 ,  C22C38/06 ,  C22C38/04 ,  C21D9/46 ,  C21D8/02 ,  C22C38/02 ,  C22C38/24 ,  C22C38/38 ,  C23C8/26

CPC分类号： C21D9/46 ,  C21D6/002 ,  C21D6/005 ,  C21D6/008 ,  C21D8/0226 ,  C21D8/0263 ,  C21D2211/005 ,  C21D2211/009 ,  C22C38/00 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/24 ,  C22C38/26 ,  C22C38/38 ,  C23C8/26

摘要： A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; V: 0.03% or more to 0.30% or less; and N: 0.005% or less, on a mass percent basis, wherein a ratio of amount of solute V to the V content (amount of solute V/V content) is more than 0.50, and balance comprises Fe and incidental impurities, and a complex-phase microstructure containing ferrite and pearlite.

公开(公告)号：US20150299830A1

公开(公告)日：2015-10-22

申请号：US14408662

申请日：2012-06-27

申请人： Takashi Kobayashi ,  Nobuyuki Nakamura ,  Tetsuya Mega

发明人： Takashi Kobayashi ,  Nobuyuki Nakamura ,  Tetsuya Mega

IPC分类号： C22C38/26 ,  C21D9/46 ,  C22C38/00 ,  C22C38/06 ,  C22C38/04 ,  C22C38/02 ,  C21D8/02 ,  C21D6/00

CPC分类号： C22C38/26 ,  C21D6/002 ,  C21D6/005 ,  C21D6/008 ,  C21D8/0263 ,  C21D9/46 ,  C21D2211/005 ,  C21D2211/009 ,  C22C38/00 ,  C22C38/001 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C23C8/32

摘要： A steel sheet for soft-nitriding has a composition containing: C: 0.05% or more to 0.10% or less; Si: 0.5% or less; Mn: 0.7% or more to 1.5% or less; P: 0.05% or less; S: 0.01% or less; Al: 0.01% or more to 0.06% or less; Cr: 0.5% or more to 1.5% or less; Nb: 0.005% or more to 0.025% or less; and N: 0.005% or less, on a mass percent basis, such that C and Nb satisfy 0.10≦Nb/C≦0.30 (where C and Nb are respective contents of the elements (by mass %)), wherein balance comprises Fe and incidental impurities, and a microstructure that is a complex-phase microstructure containing ferrite and pearlite, and the microstructure having a ratio of a microstructure other than the ferrite and the pearlite of 1% or less, and the microstructure having a ratio of polygonal ferrite in the ferrite of less than 50%.

摘要翻译： 软氮化钢板的组成为：C：0.05％以上且0.10％以下， Si：0.5％以下; Mn：0.7％以上至1.5％以下; P：0.05％以下; S：0.01％以下; Al：0.01％以上至0.06％以下; Cr：0.5％以上至1.5％以下; Nb：0.005％以上至0.025％以下; 和N：0.005％以下，C和Nb满足0.10＆nlE; Nb / C＆lt; NlE; 0.30（其中，C和Nb分别为元素含量（质量％）），其中余量包含Fe 和杂质，以及包含铁素体和珠光体的复相组织的显微组织以及具有1％以下的铁素体和珠光体以外的组织比的微结构，以及具有多边形铁素体 在铁素体中小于50％。

公开(公告)号：US08866123B2

公开(公告)日：2014-10-21

申请号：US13884331

申请日：2010-11-22

申请人： Yoshitaka Sasago ,  Masaharu Kinoshita ,  Takahiro Morikawa ,  Akio Shima ,  Takashi Kobayashi

发明人： Yoshitaka Sasago ,  Masaharu Kinoshita ,  Takahiro Morikawa ,  Akio Shima ,  Takashi Kobayashi

IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L29/792 ,  H01L27/24 ,  H01L29/66 ,  H01L27/115

CPC分类号： H01L27/2436 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/2409 ,  H01L27/2454 ,  H01L27/2481 ,  H01L27/249 ,  H01L29/66833 ,  H01L29/7926 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1683

摘要： A vertical chain memory includes two-layer select transistors having first select transistors which are vertical transistors arranged in a matrix, and second select transistors which are vertical transistors formed on the respective first select transistors, and a plurality of memory cells connected in series on the two-layer select transistors. With this configuration, the adjacent select transistors are prevented from being selected by respective shared gates, the plurality of two-layer select transistors can be selected, independently, and a storage capacity of a non-volatile storage device is prevented from being reduced.

摘要翻译： 垂直链式存储器包括具有第一选择晶体管的两层选择晶体管，它们是以矩阵形式排列的垂直晶体管，第二选择晶体管是形成在各个第一选择晶体管上的垂直晶体管，以及多个存储单元串联连接 双层选择晶体管。 利用这种配置，防止相邻的选择晶体管被相应的共享栅极选择，可以独立地选择多个两层选择晶体管，并且防止非易失性存储装置的存储容量减小。

公开(公告)号：US08835872B2

公开(公告)日：2014-09-16

申请号：US13806989

申请日：2011-06-23

申请人： Takashi Kobayashi

发明人： Takashi Kobayashi

IPC分类号： H01J37/20

CPC分类号： H01J37/20 ,  H01J2237/20285 ,  H01J2237/20292 ,  H01J2237/2817 ,  H01L21/68

摘要： A sample stage device (10) is so configured as to calculate ideal position information xtg(i), tg(i) per predetermined period that is unaffected by drive conditions relating to gaps (25, 26), etc., and to determine, per predetermined cycle and in real time, deviations dx(i), dy(i) between real-time measured positions x(i), y(i) by position detectors comprising laser interferometers (33, 34), etc., and ideal position information xtg(i), tg(i). In addition, it calculates, based on deviations dx(i), dy(i) thus determined, such speed command values vx(i), vy(i) for motors (27, 28) that measured values x(i), y(i) would follow ideal position information xtg(i), tg(i), and performs stable and high-speed positioning control for a sample table (11) through feedback control that controls speed in real time. Thus, with respect to a sample stage device, it is possible to provide a stable and high-speed positioning control method for a sample table, which is capable of suppressing noise caused by thermal drift and vibration, without being affected by drive conditions, such as the initial states of gaps, etc.

摘要翻译： 样品台装置（10）被配置为计算不受与间隙（25,26）等有关的驱动条件的影响的每预定周期的理想位置信息xtg（i），tg（i） 并且实时地通过包括激光干涉仪（33,34）的位置检测器等实时测量位置x（i），y（i）之间的偏差dx（i），dy（i）和理想 位置信息xtg（i），tg（i）。 另外，根据如此确定的偏差dx（i），dy（i），计算出测量值x（i），y（i）的电动机（27,28）的速度指令值vx（i），vy （i）将遵循理想位置信息xtg（i），tg（i），并且通过实时控制速度的反馈控制对样本表（11）执行稳定和高速定位控制。 因此，对于样品台装置，可以提供一种用于样品台的稳定且高速的定位控制方法，其能够抑制由热漂移和振动引起的噪声，而不受驱动条件的影响，例如 作为差距的初始状态等

公开(公告)号：US08772746B2

公开(公告)日：2014-07-08

申请号：US13349653

申请日：2012-01-13

申请人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Takashi Kobayashi

发明人： Masaharu Kinoshita ,  Yoshitaka Sasago ,  Takashi Kobayashi

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L27/2454 ,  H01L27/2472 ,  H01L45/144 ,  H01L45/1675

摘要： A semiconductor memory device in which the cell area can be decreased and the minimum feature size is not restricted by the thickness of the material forming the memory cell. In a semiconductor memory device, a gate insulating film, a channel extending in a direction X, and a resistance change element extending in the direction X are formed successively above multiple word lines extending in a direction Y, and a portion of the channel and a portion of the resistance change element are disposed above each of the plurality of the word lines. Such configuration can decrease the cell area and ensure the degree of design freedom.

摘要翻译： 可以减小单元面积并且最小特征尺寸不受形成存储单元的材料的厚度的半导体存储器件。 在半导体存储器件中，连续地沿着Y方向延伸的多个字线形成栅极绝缘膜，沿X方向延伸的沟道和沿X方向延伸的电阻变化元件，并且沟道的一部分和 电阻变化元件的一部分设置在多条字线的上方。 这样的配置可以减小单元面积并确保设计自由度。

公开(公告)号：US08758253B2

公开(公告)日：2014-06-24

申请号：US12513858

申请日：2007-11-06

申请人： Shuzo Sano ,  Akifumi Sako ,  Takashi Kobayashi ,  Mikio Izumi

发明人： Shuzo Sano ,  Akifumi Sako ,  Takashi Kobayashi ,  Mikio Izumi

IPC分类号： A61B8/14 ,  A61B8/00

CPC分类号： A61B8/4281 ,  A61B8/4455 ,  A61B8/4483 ,  B06B1/0292 ,  H04R19/005

摘要： An ultrasonic probe is disclosed which includes a cMUT chip having a plurality of vibration elements whose electromechanical coupling coefficient or sensitivity is changed according to a bias voltage and transmitting and receiving ultrasonic waves, an acoustic lens arranged above the cMUT chip, and a backing layer arranged below the cMUT chip. An electric leakage preventing unit is provided at the ultrasonic wave transmission/reception surface side of the acoustic lens or between the acoustic lens and the cMUT chip. The electric leakage preventing unit can be, for example, an insulating layer such as a ground layer. Such a structure makes it is possible to provide an ultrasonic probe capable of preventing electric leakage from the ultrasonic probe to an object to be examined so as to improve the electric safety and an ultrasonic diagnostic apparatus using the probe.

摘要翻译： 公开了一种超声波探头，其包括具有多个振动元件的cMUT芯片，其中机电耦合系数或灵敏度根据偏置电压而变化，并且发送和接收超声波，布置在cMUT芯片上方的声透镜，以及布置在 在cMUT芯片之下。 在声透镜的超声波发送/接收表面侧或声透镜和cMUT芯片之间设置漏电防止单元。 防漏电单元可以是例如绝缘层，例如接地层。 通过这样的结构，能够提供能够防止从超声波探头向被检体的漏电以提高电气安全性的超声波探头以及使用该探针的超声波诊断装置。