公开(公告)号：US5783839A

公开(公告)日：1998-07-21

申请号：US821926

申请日：1997-03-21

申请人： Takenori Morikawa ,  Tsutomu Tashiro

发明人： Takenori Morikawa ,  Tsutomu Tashiro

IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01L31/035254 ,  Y10S438/933

摘要： Disclosed is a semiconductor device, which is used as an optical detector and has: a photodiode section which has a first silicon layer, a light-absorbing layer and a second silicon layer which are in turn layered on a silicon substrate; wherein the light-absorbing layer is formed as a single silicon-germanium epitaxial layer and the single silicon-germanium epitaxial layer has a germanium concentration distribution which provides germanium concentrations of zero at its interfaces to the first silicon layer and the second silicon layer and provides a triangle-shaped concentration profile that a peak concentration value is provided in the middle of the single silicon-germanium epitaxial layer.

摘要翻译： 公开了一种半导体器件，其用作光学检测器，并具有：具有第一硅层，光吸收层和第二硅层的光电二极管部分，其又层叠在硅基板上; 其中所述光吸收层形成为单个硅 - 锗外延层，并且所述单个锗锗外延层具有在其与所述第一硅层和所述第二硅层的界面处提供锗浓度为零的锗浓度分布，并且提供 在单个硅 - 锗外延层的中间设置峰值浓度值的三角形浓度分布。

公开(公告)号：US6118916A

公开(公告)日：2000-09-12

申请号：US940150

申请日：1997-09-29

申请人： Takenori Morikawa ,  Tsutomu Tashiro

发明人： Takenori Morikawa ,  Tsutomu Tashiro

IPC分类号： G02B6/36 ,  G02B6/42 ,  H01L31/0232 ,  G02B6/30

CPC分类号： H01L31/0232 ,  G02B6/4202 ,  G02B6/4249 ,  G02B6/3636 ,  G02B6/3652 ,  G02B6/3692

摘要： A parallel light receiving OEIC comprising a light receiving OEIC layed out in an array form, the light receiving OEIC having an optical fiber fixing groove, provided on a silicon substrate, for efficiently introducing light from an optical fiber into a photodiode, wherein at least one optical fiber fixing groove is provided between light receiving ICs for respective channels. This constitution enables the substantial distance between channels to be increased without increasing the layout area, resulting in reduced interference of noises generated in respective channels with each other, which markedly reduces the influence of crosstalk without increasing the layout area of the parallel light receiving IC.

摘要翻译： 包括以阵列形式布置的光接收OEIC的平行光接收OEIC，光接收OEIC具有设置在硅衬底上的光纤固定槽，用于有效地将光从光纤引入光电二极管，其中至少一个 光纤固定槽设置在各个通道的光接收IC之间。 这种结构使得能够增加通道之间的实质距离而不增加布局面积，导致相应通道中产生的噪声的干扰减小，这显着降低了串扰的影响，而不增加平行光接收IC的布局面积。

公开(公告)号：US5796118A

公开(公告)日：1998-08-18

申请号：US777350

申请日：1996-12-27

申请人： Takenori Morikawa ,  Tsutomu Tashiro

发明人： Takenori Morikawa ,  Tsutomu Tashiro

IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L29/06

CPC分类号： B82Y20/00 ,  H01L31/035254

摘要： A photodetection semiconductor device is constructed in such a manner that a photodiode light absorbing layer includes an Si/SiGe super-lattice layer (6), which forms a layer in parallel with the surface of a silicon substrate (1), and upper and lower P type low Ge concentration SiGe epitaxial layers (5) and (7), which sandwich the Si/SiGe super-lattice layer between them and contain Ge lower than a Ge content in the Si/SiGe super-lattice layer, a highly dense P+ type Si contact layer (8) is directly formed on the upper SiGe epitaxial layer (7) and a highly dense N+ type epitaxial layer (2) is formed immediately below the lower SiGe epitaxial layer (5). Preferably, Ge concentration in each of the upper and lower SiGe epitaxial layers (5) and (7) is set to be at least 1% or higher.

摘要翻译： 光探测半导体器件以这样的方式被构造：光电二极管光吸收层包括Si / SiGe超晶格层（6），其形成与硅衬底（1）的表面平行的层，以及上和下 P型低Ge浓度SiGe外延层（5）和（7），它们夹在其间的Si / SiGe超晶格层并含有低于Si / SiGe超晶格层中Ge含量的Ge，高密度P + 在上部SiGe外延层（7）上直接形成Si型接触层（8），在下部SiGe外延层（5）的正下方形成高密度的N +型外延层（2）。 优选地，上，下SiGe外延层（5）和（7）中的每一个中的Ge浓度设定为至少1％以上。

公开(公告)号：US5942789A

公开(公告)日：1999-08-24

申请号：US902283

申请日：1997-07-29

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/00

CPC分类号： B82Y20/00 ,  H01L31/035254

摘要： A photodetector provides high photo-sensitivity, a low resistance of a cathode circuit and quick photoresponse, and includes a light absorption layer in a cavity, which is formed in a N-Si epitaxial layer and surrounded by a side wall oxide layer. A N-Si diffusion layer is formed on the bottom and the side wall around the cavity and has a lower resistance than the epitaxial layer. The diffusion layer contacts a cathode take-out region so that the resistance of the cathode circuit is decreased.

摘要翻译： 光电检测器提供高光敏性，阴极电路的低电阻和快速光响应，并且在空腔中包括形成在N-Si外延层中并被侧壁氧化物层包围的光吸收层。 N型Si扩散层形成在空腔周围的底部和侧壁上，并且具有比外延层更低的电阻。 扩散层接触阴极取出区域，使得阴极电路的电阻降低。

公开(公告)号：US5308682A

公开(公告)日：1994-05-03

申请号：US955027

申请日：1992-10-01

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： G03F9/00 ,  H01L21/027 ,  H01L23/544 ,  B32B9/00

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An alignment check pattern formed by a first insulating film; a first dummy pattern formed on a surface of said first insulating film; a second insulating film formed on a composite surface of said first insulating film and said first dummy pattern; a second dummy pattern formed on said second film, and positioned directly over said first dummy pattern in plan view; a third insulating film formed on a composite surface of said second insulating film and said second dummy pattern; a regular scale pattern formed on said third insulating film, and positioned directly over said second dummy pattern; fourth insulating film formed on a composite surface of said third insulating film and said regular scale pattern; and a vernier scale pattern formed on a surface of said fourth insulating film and positioned directly over said regular scale pattern.

摘要翻译： 由第一绝缘膜形成的对准检查图案; 形成在所述第一绝缘膜的表面上的第一虚设图案; 形成在所述第一绝缘膜和所述第一伪图案的复合表面上的第二绝缘膜; 形成在所述第二膜上的第二虚拟图案，并且在平面图中直接位于所述第一虚拟图案上方; 形成在所述第二绝缘膜和所述第二虚设图案的复合表面上的第三绝缘膜; 形成在所述第三绝缘膜上并且直接位于所述第二虚设图案上的规则尺度图案; 第四绝缘膜，形成在所述第三绝缘膜和所述规则刻度图案的复合表面上; 以及形成在所述第四绝缘膜的表面上且直接位于所述规则刻度图案上的游标刻度图案。

公开(公告)号：US5296731A

公开(公告)日：1994-03-22

申请号：US954698

申请日：1992-09-30

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8229 ,  H01L27/06 ,  H01L27/102 ,  H01L29/732 ,  H01L27/02 ,  H01L27/04

CPC分类号： H01L27/1023 ,  Y10S257/925

摘要： A semiconductor integrated circuit device according to the present invention includes a semiconductor layer of a first conductivity type having a high concentration of impurity atoms which layer is formed in or on predetermined locations of a semiconductor substrate with the first conductivity type which locations requires a resistance to alpha rays. The device of the present invention can decrease the amount of the electron collection to a semiconductor layer of a second conductivity type having a high concentration of impurity atoms which layer is separated from the semiconductor layer of the first conductivity type having a high concentration of impurity atoms. Therefore, the semiconductor integrated circuit device of the present invention can have enhanced resistance to alpha rays without capacitances being increased and maintain a fast speed of circuit operation.

摘要翻译： 根据本发明的半导体集成电路器件包括具有高浓度杂质原子的第一导电类型的半导体层，该半导体层在具有第一导电类型的半导体衬底的预定位置中或之上形成，该位置需要对 阿尔法射线 本发明的器件可以将电子收集量减少为具有高浓度杂质原子的第二导电类型的半导体层，该层与具有高浓度杂质原子的第一导电类型的半导体层分离 。 因此，本发明的半导体集成电路器件可以具有增强的对α射线的电阻，而不增加电容，并保持电路操作的快速。

公开(公告)号：US6132107A

公开(公告)日：2000-10-17

申请号：US940049

申请日：1997-09-30

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： G02B6/12 ,  G02B6/42 ,  H01L31/0232

CPC分类号： G02B6/4214 ,  G02B6/4249 ,  G02B2006/12104

摘要： It is an object of the invention to provide a light-receiving module, in which alignments of optical axes of optical fibers and photodiodes can be easily carried out and efficiencies of light incidences on the photodiodes are not influenced by imperfections in a fabrication process. The light-receiving module according to the invention is composed of a photodiode-forming member and an optical fiber-supporting member. The photodiode-forming member is composed of light-receiving surfaces of the photodiode formed thereon and bank-shaped optical fiber-fixing guides for guiding the optical fibers along both their sides. The optical fiber-supporting member is composed of optical fiber-fixing grooves for fixing parts of the optical fibers near their output ends and reflector surfaces for changing directions of the lights emitted from light-emitting surfaces of the optical fibers. An attitude of the photodiode-forming member relative to the optical fiber-supporting member is so adjusted that the lights reflected by the reflector surfaces are precisely incident on the light-receiving surfaces of the photodiodes, and both the photodiode-forming and optical fiber-supporting members are stuck together.

摘要翻译： 本发明的目的是提供一种光接收模块，其中可以容易地执行光纤和光电二极管的光轴对准，并且在光电二极管上的光入射效率不受制造工艺中的缺陷的影响。 根据本发明的光接收模块由光电二极管形成构件和光纤支撑构件组成。 光电二极管形成部件由形成在其上的光电二极管的光接收表面和用于沿其两侧引导光纤的堤形光纤固定引导件组成。 光纤支撑部件由用于固定光纤的输出端部分的光纤固定槽和用于改变从光纤的发光表面发出的光的方向的反射器表面构成。 光电二极管形成构件相对于光纤支撑构件的姿态被调整为使得由反射器表面反射的光被精确地入射到光电二极管的光接收表面上，并且光电二极管形成和光纤 - 支持成员卡在一起。

公开(公告)号：US6008506A

公开(公告)日：1999-12-28

申请号：US67620

申请日：1998-04-28

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： H01L27/146 ,  H01L27/15 ,  H01L31/0352 ,  H01L33/06 ,  H01L27/14 ,  H01L31/12

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L27/14643 ,  H01L27/15 ,  H01L31/035254

摘要： There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconductor layer, a highly doped, second semiconductor layer formed on the first insulating layer, a third semiconductor layer formed on the second semiconductor layer, a device isolation region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the device isolation region defining a device formation region therein, the device formation region being formed with a recess starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a second insulating layer covering an inner sidewall of the recess therewith, a multi-layered structure formed within the recess, the multi-layered structure having at least a quantum well layer and a contact layer, a connection region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a first electrode formed on the connection region, a second electrode formed on the contact layer, and a light-impermeable region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the light-impermeable region being formed outside the recess. The optical semiconductor device can be fabricated in a planar structure, and has an improved photoelectric transfer efficiency. The optical semiconductor device makes it possible to integrate a light-emitting device and a light-receiving device on a common chip with the devices being optically insulated from each other.

摘要翻译： 提供了一种光半导体器件，包括第一半导体层，形成在第一半导体层上的第一绝缘层，第一绝缘层具有与第一半导体层的折射率不同的折射率，高掺杂的第二半导体层 形成在所述第一绝缘层上的第三半导体层，形成在所述第二半导体层上的第三半导体层，具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的器件隔离区， 区域，其中限定了器件形成区域，器件形成区域形成有从第三半导体层的上表面开始并终止在第二半导体层的上表面处的凹部，覆盖凹部的内侧壁的第二绝缘层 由此，形成在凹部内的多层结构，多层结构 至少具有量子阱层和接触层的连接区域，具有从第三半导体层的上表面开始并终止于第二半导体层的上表面的深度的连接区域，形成在连接区域上的第一电极， 形成在所述接触层上的第二电极，以及具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的不透光区域，所述不透光区域形成在所述凹部 。 光学半导体器件可以制造成平面结构，并且具有改善的光电转换效率。 光学半导体器件使得可以将公知的芯片上的发光器件和光接收器件彼此光隔离地集成在一起。

公开(公告)号：US5793060A

公开(公告)日：1998-08-11

申请号：US840975

申请日：1997-04-21

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： H01L31/12 ,  H01L27/146 ,  H01L27/15 ,  H01L31/0352 ,  H01L31/107 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/34 ,  H01L33/44 ,  H01S5/00 ,  H01S5/026 ,  H01L27/14

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L27/14643 ,  H01L27/15 ,  H01L31/035254

摘要： There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconductor layer, a highly doped, second semiconductor layer formed on the first insulating layer, a third semiconductor layer formed on the second semiconductor layer, a device isolation region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the device isolation region defining a device formation region therein, the device formation region being formed with a recess starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a second insulating layer covering an inner sidewall of the recess therewith, a multi-layered structure formed within the recess, the multi-layered structure having at least a quantum well layer and a contact layer, a connection region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a first electrode formed on the connection region, a second electrode formed on the contact layer, and a light-impermeable region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the light-impermeable region being formed outside the recess. The optical semiconductor device can be fabricated in a planar structure, and has an improved photoelectric transfer efficiency. The optical semiconductor device makes it possible to integrate a light-emitting device and a light-receiving device on a common chip with the devices being optically insulated from each other.

摘要翻译： 提供了一种光半导体器件，包括第一半导体层，形成在第一半导体层上的第一绝缘层，第一绝缘层具有与第一半导体层的折射率不同的折射率，高掺杂的第二半导体层 形成在所述第一绝缘层上的第三半导体层，形成在所述第二半导体层上的第三半导体层，具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的器件隔离区， 区域，其中限定了器件形成区域，器件形成区域形成有从第三半导体层的上表面开始并终止在第二半导体层的上表面处的凹部，覆盖凹部的内侧壁的第二绝缘层 由此，形成在凹部内的多层结构，多层结构 至少具有量子阱层和接触层的连接区域，具有从第三半导体层的上表面开始并终止于第二半导体层的上表面的深度的连接区域，形成在连接区域上的第一电极， 形成在所述接触层上的第二电极，以及具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的不透光区域，所述不透光区域形成在所述凹部 。 光学半导体器件可以制造成平面结构，并且具有改善的光电转换效率。 光学半导体器件使得可以将公知的芯片上的发光器件和光接收器件彼此光隔离地集成在一起。

公开(公告)号：US5994154A

公开(公告)日：1999-11-30

申请号：US67619

申请日：1998-04-28

申请人： Takenori Morikawa

发明人： Takenori Morikawa

IPC分类号： H01L31/12 ,  H01L27/146 ,  H01L27/15 ,  H01L31/0352 ,  H01L31/107 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/34 ,  H01L33/44 ,  H01S5/00 ,  H01S5/026 ,  H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L27/14643 ,  H01L27/15 ,  H01L31/035254

摘要： There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconductor layer, a highly doped, second semiconductor layer formed on the first insulating layer, a third semiconductor layer formed on the second semiconductor layer, a device isolation region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the device isolation region defining a device formation region therein, the device formation region being formed with a recess starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a second insulating layer covering an inner sidewall of the recess therewith, a multi-layered structure formed within the recess, the multi-layered structure having at least a quantum well layer and a contact layer, a connection region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the second semiconductor layer, a first electrode formed on the connection region, a second electrode formed on the contact layer, and a light-impermeable region having a depth starting at an upper surface of the third semiconductor layer and terminating at an upper surface of the first insulating layer, the light-impermeable region being formed outside the recess. The optical semiconductor device can be fabricated in a planar structure, and has an improved photoelectric transfer efficiency. The optical semiconductor device makes it possible to integrate a light-emitting device and a light-receiving device on a common chip with the devices being optically insulated from each other.

摘要翻译： 提供了一种光半导体器件，包括第一半导体层，形成在第一半导体层上的第一绝缘层，第一绝缘层具有与第一半导体层的折射率不同的折射率，高掺杂的第二半导体层 形成在所述第一绝缘层上的第三半导体层，形成在所述第二半导体层上的第三半导体层，具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的器件隔离区， 区域，其中限定了器件形成区域，器件形成区域形成有从第三半导体层的上表面开始并终止在第二半导体层的上表面处的凹部，覆盖凹部的内侧壁的第二绝缘层 由此，形成在凹部内的多层结构，多层结构 至少具有量子阱层和接触层的连接区域，具有从第三半导体层的上表面开始并终止于第二半导体层的上表面的深度的连接区域，形成在连接区域上的第一电极， 形成在所述接触层上的第二电极，以及具有从所述第三半导体层的上表面开始并终止于所述第一绝缘层的上表面的深度的不透光区域，所述不透光区域形成在所述凹部 。 光学半导体器件可以制造成平面结构，并且具有改善的光电转换效率。 光学半导体器件使得可以将公知的芯片上的发光器件和光接收器件彼此光隔离地集成在一起。