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    Semiconductor light emitting device including metal reflecting layer
    1.
    发明授权
    Semiconductor light emitting device including metal reflecting layer 有权
    半导体发光器件包括金属反射层

    公开(公告)号：US08823031B2

    公开(公告)日：2014-09-02

    申请号：US13600145

    申请日：2012-08-30

    申请人： Takeshi Kususe ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

    发明人： Takeshi Kususe ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

    IPC分类号： H01L33/60 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

    CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

    摘要翻译： 半导体发光器件包括半导体结构，透明导电层，电介质膜和金属反射层。 半导体结构包括有源区。 透明导电层形成在半导体结构的上表面上。 电介质膜形成在透明导电层的上表面上。 金属反射层形成在电介质膜的上表面上。 电介质膜具有至少一个开口，从而部分地暴露透明导电层。 透明导电层通过开口与金属反射层电连接。 阻挡层部分地形成并覆盖开口，使得阻挡层插入在透明导电层和金属反射层之间。

    SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING METAL REFLECTING LAYER
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING METAL REFLECTING LAYER 有权
    半导体发光器件，包括金属反射层

    公开(公告)号：US20130049053A1

    公开(公告)日：2013-02-28

    申请号：US13600145

    申请日：2012-08-30

    申请人： Takeshi KUSUSE ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

    发明人： Takeshi KUSUSE ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

    IPC分类号： H01L33/60

    CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

    摘要翻译： 半导体发光器件包括半导体结构，透明导电层，电介质膜和金属反射层。 半导体结构包括有源区。 透明导电层形成在半导体结构的上表面上。 电介质膜形成在透明导电层的上表面上。 金属反射层形成在电介质膜的上表面上。 电介质膜具有至少一个开口，从而部分地暴露透明导电层。 透明导电层通过开口与金属反射层电连接。 阻挡层部分地形成并覆盖开口，使得阻挡层插入在透明导电层和金属反射层之间。

    Semiconductor light emitting device having an electrode made of a conductive oxide
    4.
    发明授权
    Semiconductor light emitting device having an electrode made of a conductive oxide 有权
    具有由导电氧化物制成的电极的半导体发光器件

    公开(公告)号：US07615798B2

    公开(公告)日：2009-11-10

    申请号：US11091915

    申请日：2005-03-29

    申请人： Daisuke Sanga ,  Takeshi Kususe ,  Takahiko Sakamoto ,  Hisashi Kasai

    发明人： Daisuke Sanga ,  Takeshi Kususe ,  Takahiko Sakamoto ,  Hisashi Kasai

    IPC分类号： H01L29/22 ,  H01L29/24

    CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L2933/0083

    摘要： A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

    摘要翻译： 提供一种提高提取效率的半导体发光器件。 半导体发光器件包括依次堆叠的第一导电类型半导体层，发光层和第二导电半导体层，分别连接到第一和第二导电半导体层的电极，连接到第二导电类型半导体 层，其包括下导电氧化物膜和设置在下导电氧化物膜上的上导电氧化物膜，以及金属膜，仅设置在上导电氧化物膜上。 上部和下部导电氧化物膜包括包含选自锌（Zn），铟（In），锡（Sn）和镁（Mg）中的至少一种元素的氧化物。

    Semiconductor light emitting device
    6.
    发明申请
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US20050212002A1

    公开(公告)日：2005-09-29

    申请号：US11091915

    申请日：2005-03-29

    申请人： Daisuke Sanga ,  Takeshi Kususe ,  Takahiko Sakamoto ,  Hisashi Kasai

    发明人： Daisuke Sanga ,  Takeshi Kususe ,  Takahiko Sakamoto ,  Hisashi Kasai

    IPC分类号： H01L29/221 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42

    CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/38 ,  H01L2933/0083

    摘要： A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

    摘要翻译： 提供一种提高提取效率的半导体发光器件。 半导体发光器件包括依次堆叠的第一导电类型半导体层，发光层和第二导电半导体层，分别连接到第一和第二导电半导体层的电极，连接到第二导电类型半导体 层，其包括下导电氧化物膜和设置在下导电氧化物膜上的上导电氧化物膜，以及金属膜，仅设置在上导电氧化物膜上。 上部和下部导电氧化物膜包括包含选自锌（Zn），铟（In），锡（Sn）和镁（Mg）中的至少一种元素的氧化物。

    Life-improved semiconductor light emitting device
    7.
    发明授权
    Life-improved semiconductor light emitting device 有权
    改善寿命的半导体发光器件

    公开(公告)号：US08686441B2

    公开(公告)日：2014-04-01

    申请号：US13441679

    申请日：2012-04-06

    申请人： Toshiaki Ogawa ,  Hisashi Kasai ,  Masahiko Sano

    发明人： Toshiaki Ogawa ,  Hisashi Kasai ,  Masahiko Sano

    IPC分类号： H01L27/15 ,  H01L33/42 ,  H01L33/40 ,  H01L33/46

    CPC分类号： H01L27/15 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20. The intermediate layer 17 is formed of a material containing an element with larger ionization tendency than the reflective layer 16.

    摘要翻译： 半导体发光器件包括第一和第二半导体层，有源区，透明导电层13，反射结构20和第一电极。 第二半导体层具有与第一半导体层不同的导电性。 有源区布置在第一和第二半导体层之间。 透明导电层13布置在第一半导体层上或上方。 反射结构20布置在透明导电层13上或上方。第一电极布置在反射结构20上或上方，并且电连接到第一半导体层。 反射结构20至少包括反射层16.中间层17介于透明导电层13和反射结构20之间。中间层17由含有比电离倾向大的元素的材料形成 反射层16。

    LIFE-IMPROVED SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    LIFE-IMPROVED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    生命改进的半导体发光器件

    公开(公告)号：US20120256221A1

    公开(公告)日：2012-10-11

    申请号：US13441679

    申请日：2012-04-06

    申请人： Toshiaki Ogawa ,  Hisashi Kasai ,  Masahiko Sano

    发明人： Toshiaki Ogawa ,  Hisashi Kasai ,  Masahiko Sano

    IPC分类号： H01L33/60 ,  B82Y99/00

    CPC分类号： H01L27/15 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20. The intermediate layer 17 is formed of a material containing an element with larger ionization tendency than the reflective layer 16.

    摘要翻译： 半导体发光器件包括第一和第二半导体层，有源区，透明导电层13，反射结构20和第一电极。 第二半导体层具有与第一半导体层不同的导电性。 有源区布置在第一和第二半导体层之间。 透明导电层13布置在第一半导体层上或上方。 反射结构20布置在透明导电层13上或上方。第一电极布置在反射结构20上或上方，并且电连接到第一半导体层。 反射结构20至少包括反射层16.中间层17介于透明导电层13和反射结构20之间。中间层17由含有比电离倾向大的元素的材料形成 反射层16。

    Nitride semiconductor device
    9.
    发明申请
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US20070096077A1

    公开(公告)日：2007-05-03

    申请号：US11589113

    申请日：2006-10-30

    申请人： Daisuke Sanga ,  Hisashi Kasai ,  Kazuhiro Miyagi

    发明人： Daisuke Sanga ,  Hisashi Kasai ,  Kazuhiro Miyagi

    IPC分类号： H01L29/06

    CPC分类号： H01L29/205 ,  H01L29/2003 ,  H01L33/02 ,  H01L33/14 ,  H01L33/32 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/32341

    摘要： A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).

    摘要翻译： 通过防止p侧氮化物半导体层中的电流的不均匀分布，具有优异的耐ESD性的氮化物半导体器件。 p侧氮化物半导体层（40）从有源层（30）侧包括（a）包含p型杂质的p侧宽带隙层（12）和（b）三层结构 （15），包括第一p侧氮化物半导体层（16），第二p侧氮化物半导体层（17）和第三p侧氮化物半导体层（18）。