公开(公告)号：US20130049053A1

公开(公告)日：2013-02-28

申请号：US13600145

申请日：2012-08-30

申请人： Takeshi KUSUSE ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

发明人： Takeshi KUSUSE ,  Naoki Azuma ,  Toshiaki Ogawa ,  Hisashi Kasai

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A semiconductor light emitting device includes a semiconductor structure, a transparent electrically-conducting layer, a dielectric film, and a metal reflecting layer. The semiconductor structure includes an active region. The transparent electrically-conducting layer is formed on the upper surface of the semiconductor structure. The dielectric film is formed on the upper surface of the transparent electrically-conducting layer. The metal reflecting layer is formed on the upper surface of the dielectric film. The dielectric film has at least one opening whereby partially exposing the transparent electrically-conducting layer. The transparent electrically-conducting layer is electrically connected to the metal reflecting layer through the opening. A barrier layer is partially formed and covers the opening so that the barrier layer is interposed between the transparent electrically-conducting layer and the metal reflecting layer.

摘要翻译： 半导体发光器件包括半导体结构，透明导电层，电介质膜和金属反射层。 半导体结构包括有源区。 透明导电层形成在半导体结构的上表面上。 电介质膜形成在透明导电层的上表面上。 金属反射层形成在电介质膜的上表面上。 电介质膜具有至少一个开口，从而部分地暴露透明导电层。 透明导电层通过开口与金属反射层电连接。 阻挡层部分地形成并覆盖开口，使得阻挡层插入在透明导电层和金属反射层之间。

公开(公告)号：US20120025256A1

公开(公告)日：2012-02-02

申请号：US13271100

申请日：2011-10-11

申请人： Takeshi KUSUSE ,  Takahiko Sakamoto

发明人： Takeshi KUSUSE ,  Takahiko Sakamoto

IPC分类号： H01L33/60 ,  H01L33/50 ,  H01L33/48

CPC分类号： H01L33/60 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/00012

摘要： A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, and the surface of the n-type semiconductor layer is exposed at the periphery. An n electrode is disposed on the exposed surface of the n-type semiconductor layer. This device structure can enhance the emission efficiency and the light extraction efficiency.

摘要翻译： 氮化物半导体发光器件包括在衬底上发光的层状部分。 分层部分包括n型半导体层，有源层和p型半导体层。 层叠部的周边倾斜，并且n型半导体层的表面在周边露出。 n电极设置在n型半导体层的暴露表面上。 该器件结构可以提高发光效率和光提取效率。