公开(公告)号：US07825070B2

公开(公告)日：2010-11-02

申请号：US12270336

申请日：2008-11-13

申请人： Takuro Matsui ,  Nozomu Matsukawa ,  Kazuaki Nishio

发明人： Takuro Matsui ,  Nozomu Matsukawa ,  Kazuaki Nishio

IPC分类号： C40B50/18 ,  C07K17/00

CPC分类号： C07K14/47 ,  C07K17/14

摘要： A novel method for two-dimensionally arraying ferritin on a substrate is provided which obviates the need for a metal ion that permits linking between adjacent two ferritin particles. In a method of two-dimensionally arraying ferritin on a substrate, the surface of the substrate is hydrophilic, and the method includes the steps of: developing a solution containing a solvent and the ferritin on the substrate; and removing the solvent from the solution developed on the substrate, while the ferritin has an amino acid sequence set out in SEQ ID NO: 1 modified at its N-terminus.

摘要翻译： 提供了一种用于在基底上二维排列铁蛋白的新方法，其消除了允许在相邻的两个铁蛋白颗粒之间连接的金属离子的需要。 在基板上二维排列铁蛋白的方法中，基板的表面是亲水性的，该方法包括以下步骤：在基板上显影含有溶剂和铁蛋白的溶液; 并从底物上显影的溶液中除去溶剂，而铁蛋白具有在其N末端修饰的SEQ ID NO：1所示的氨基酸序列。

公开(公告)号：US20090203552A1

公开(公告)日：2009-08-13

申请号：US12270336

申请日：2008-11-13

申请人： Takuro MATSUI ,  Nozomu Matsukawa ,  Kazuaki Nishio

发明人： Takuro MATSUI ,  Nozomu Matsukawa ,  Kazuaki Nishio

IPC分类号： C40B50/14

CPC分类号： C07K14/47 ,  C07K17/14

摘要： A novel method for two-dimensionally arraying ferritin on a substrate is provided which obviates the need for a metal ion that permits linking between adjacent two ferritin particles. In a method of two-dimensionally arraying ferritin on a substrate, the surface of the substrate is hydrophilic, and the method includes the steps of: developing a solution containing a solvent and the ferritin on the substrate; and removing the solvent from the solution developed on the substrate, while the ferritin has an amino acid sequence set out in SEQ ID NO: 1 modified at its N-terminus.

摘要翻译： 提供了一种用于在基底上二维排列铁蛋白的新方法，其消除了允许在相邻的两个铁蛋白颗粒之间连接的金属离子的需要。 在基板上二维排列铁蛋白的方法中，基板的表面是亲水性的，该方法包括以下步骤：在基板上显影含有溶剂和铁蛋白的溶液; 并从底物上显影的溶液中除去溶剂，而铁蛋白具有在其N末端修饰的SEQ ID NO：1所示的氨基酸序列。

公开(公告)号：US20080153713A1

公开(公告)日：2008-06-26

申请号：US11952632

申请日：2007-12-07

申请人： Takuro MATSUI ,  Nozomu Matsukawa

发明人： Takuro MATSUI ,  Nozomu Matsukawa

IPC分类号： C40B50/18

CPC分类号： C40B50/18 ,  C40B40/10

摘要： The present invention provides a novel method of two-dimensionally arraying ferritin on a substrate, which obviates the need for a metal ion for achieving linking between two adjacent ferritin. The present invention provides a method of two-dimensionally arraying ferritin on a substrate, wherein the ferritin has an amino acid sequence set out in SEQ ID NO: 1 on the outer peripheral surface; the surface of the substrate is hydrophilic; and the method includes a development step of developing a solution that contains a solvent, the ferritin, and 6.5 mM to 52 mM ammonium sulfate on the substrate, and a removal step of removing the solvent from the solution developed on the substrate.

摘要翻译： 本发明提供了一种在基板上二维排列铁蛋白的新方法，其不需要用于实现两个相邻铁蛋白之间的连接的金属离子。 本发明提供了在基板上二维排列铁蛋白的方法，其中，铁蛋白在外周面上具有SEQ ID NO：1所示的氨基酸序列; 基材的表面是亲水性的; 并且该方法包括显影步骤，其在基底上开发含有溶剂，铁蛋白和6.5mM至52mM硫酸铵的溶液，以及从在基底上显影的溶液中除去溶剂的去除步骤。

公开(公告)号：US20080161205A1

公开(公告)日：2008-07-03

申请号：US11952609

申请日：2007-12-07

申请人： Takuro Matsui ,  Nozomu Matsukawa

发明人： Takuro Matsui ,  Nozomu Matsukawa

IPC分类号： C40B50/18

CPC分类号： C07K14/47 ,  B82Y30/00

摘要： The present invention provides a novel method of two-dimensionally arraying ferritin on a substrate, which obviates the need for a metal ion for achieving linking between two adjacent ferritin. The present invention provides a method of two-dimensionally arraying ferritin on a substrate, wherein the ferritin has an amino acid sequence set out in SEQ ID NO: 1 on the outer peripheral surface; the surface of the substrate is hydrophilic; and the method includes a development step of developing a solution that contains a solvent, the ferritin, and 2 mM to 100 mM ammonium acetate on the substrate, and a removal step of removing the solvent from the solution developed on the substrate.

摘要翻译： 本发明提供了一种在基板上二维排列铁蛋白的新方法，其不需要用于实现两个相邻铁蛋白之间的连接的金属离子。 本发明提供了在基板上二维排列铁蛋白的方法，其中，铁蛋白在外周面上具有SEQ ID NO：1所示的氨基酸序列; 基材的表面是亲水性的; 并且该方法包括显影步骤，其在基底上显影含有溶剂，铁蛋白和2mM至100mM乙酸铵的溶液，以及从在基底上显影的溶液中除去溶剂的去除步骤。

公开(公告)号：US20120058490A1

公开(公告)日：2012-03-08

申请号：US13296879

申请日：2011-11-15

申请人： Kazuaki NISHIO ,  Nozomu Matsukawa ,  Shigeo Yoshii

发明人： Kazuaki NISHIO ,  Nozomu Matsukawa ,  Shigeo Yoshii

IPC分类号： G01N27/00

CPC分类号： G01N33/54306 ,  C12Q1/26

摘要： Provided is a method for detecting an antigen without use of a labeled-antibody. A support having an antibody and a multi-copper oxidase CueO immobilized thereon is brought into contact with a first buffer solution containing the antigen, a current is measured by a potentiostat method using the support and a second buffer solution, and when the measured current is greater than or equal to 1.5×(blank value), it is determined that the antigen exists. The second buffer solution contains a substrate of the CueO and has an ionic strength falling within a range of not less than 0.3 mM and not more than 1.0 mM.

摘要翻译： 提供了不使用标记抗体来检测抗原的方法。 使具有固定在其上的抗体和多铜氧化酶CueO的载体与含有抗原的第一缓冲溶液接触，通过使用载体和第二缓冲溶液的恒电位法测量电流，并且当测量的电流为 大于或等于1.5×（空白值），则确定存在抗原。 第二缓冲溶液含有CueO的底物，离子强度在0.3mM以上1.0mM以下的范围内。

公开(公告)号：US20080108227A1

公开(公告)日：2008-05-08

申请号：US11878691

申请日：2007-07-26

申请人： Shinya Kumagai ,  Shigeo Yoshii ,  Nozomu Matsukawa ,  Ichiro Yamashita

发明人： Shinya Kumagai ,  Shigeo Yoshii ,  Nozomu Matsukawa ,  Ichiro Yamashita

IPC分类号： H01L21/28

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/66439 ,  H01L49/006 ,  Y10S438/962 ,  Y10S977/773

摘要： The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode. In the method for production of SET of the present invention, the metal or semiconductor particle can be fixed as a quantum dot at a suitable position in the nano gap between the source electrode/drain electrode following decomposition of ferritin, and in addition, formation of unnecessary quantum dot can be suppressed.

摘要翻译： 本发明提供一种单电子半导体元件（SET）的制造方法，其中量子点选择性地排列在细电极之间的纳米间隙中，从而显着提高了产品产率，从而实现了优异的实用性。 本发明的SET的制造方法的特征在于，将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上，所述源极和漏极通过层叠钛膜和 除钛以外的金属的膜，由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。 在本发明的SET的制造方法中，金属或半导体粒子可以在铁蛋白分解后的源电极/漏电极之间的纳米间隙的适当位置作为量子点固定，另外，形成 可以抑制不必要的量子点。

公开(公告)号：US06943041B2

公开(公告)日：2005-09-13

申请号：US10719412

申请日：2003-11-21

申请人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

发明人： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L21/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.

摘要翻译： 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。

公开(公告)号：US06778427B2

公开(公告)日：2004-08-17

申请号：US10250319

申请日：2003-06-26

申请人： Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

发明人： Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

IPC分类号： G11C1114

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： A magnetoresistve memory device includes a magnetoresistive element and a wiring for applying a magnetic field to the magnetoresistive element. The wiring includes two or more conductive wires that extend in the same direction. A plurality of conductive wires is used to apply a magnetic field to a single magnetoresistive element, thereby achieving high-speed response and suppressing crosstalk.

摘要翻译： 磁阻存储器件包括磁阻元件和用于向磁阻元件施加磁场的布线。 布线包括沿相同方向延伸的两根或多根导线。 使用多根导线将磁场施加到单个磁阻元件，从而实现高速响应并抑制串扰。

公开(公告)号：US06590268B2

公开(公告)日：2003-07-08

申请号：US09803571

申请日：2001-03-09

申请人： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

发明人： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

IPC分类号： H01L4300

CPC分类号： G11C11/16

摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.

摘要翻译： 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。

公开(公告)号：US06567246B1

公开(公告)日：2003-05-20

申请号：US09516552

申请日：2000-03-01

申请人： Hiroshi Sakakima ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yasuhiro Kawawake ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

发明人： Hiroshi Sakakima ,  Yasunari Sugita ,  Mitsuo Satomi ,  Yasuhiro Kawawake ,  Masayoshi Hiramoto ,  Nozomu Matsukawa

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3925 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F41/18 ,  H01F41/302 ,  H01L43/08

摘要： A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.

摘要翻译： 磁阻效应元件包括自由层，其中其磁化方向响应于外部磁场容易旋转，第一非磁性层和设置在与第一非磁性层的自由层相对的一侧上的第一被钉扎层 非磁性层，其中第一被钉扎层的磁化方向响应于外部磁场而不容易旋转。 第一被钉扎层和自由层中的至少一个包括与第一非磁性层接触的第一金属磁性膜和第一氧化物磁性膜。