摘要:
Embodiments of the present invention disclose a heat dissipation device, including: a closed shell and a temperature control device. The temperature control device includes: a cold storage medium module, a first group of thermosiphons, and a second group thermosiphons; wherein the cold storage medium module is disposed at the outside of the closed shell, the first group thermosiphons are provided with a first group of evaporation ends and a first group of condensation ends, and the second group of thermosiphons are provided with a second group of evaporation ends and a second group of condensation ends. Embodiments of the present invention also disclose a communication device and a heat dissipation method for a communication device. The above technical solutions save electric energy and improve the effects of energy saving and emission reduction of the system.
摘要:
A method and apparatus for correcting the offset and linearity error of a data acquisition system. A charge redistribution digital to analog convertor (CDAC) is connected to one of the differential inputs of a comparator whose second input comes from a function CDAC. The calibration algorithm is built into a digital control unit. The digital control unit detects the offset and capacitor mismatch errors sequentially, stores the calibration codes for each error in calibration mode and provides the input-dependent error correction signals synchronized with the binary search timing to adjust the differential input of the comparator and compensate the input-dependent errors present at the output of the non-ideal function CDAC during normal conversions.
摘要:
An apparatus implements analog-to-digital conversion with released requirement on the reference settling errors and improved immunity to the noise originated from the power supply, ground and the positive and negative references. It includes a comparator comparing the specified reference levels with the analog input, multi DAC sub-circuits with separate non-binary search schemes applied to and a digital control logic controlling the reference search process. No cross-talk occurs among the different non-binary search algorithms. Each redundancy scheme is localized in a respective DAC sub-circuit and covers the reference levels only in the current DAC. The non-binary search algorithms are fulfilled in the digital domain and trade the non-binary search step sizes with the number of the search steps to introduce redundancy to the reference levels.
摘要:
An analog sample-and-hold switch has parallel branches extending from an input node to an output node connected to a hold capacitor, each branch having a PMOS signal switch FET in series with a PMOS dummy FET. A sample clock controls on-off switching of the PMOS signal switch FETs, and an inverse of the sample clock controls a complementary on-off switching of the PMOS dummy FETs. A bias sequencer circuit biases the PMOS signal switch FETs and biases the PMOS dummy FETs, in a complementary manner, synchronous with their respective on-off states. The on-off switching of the PMOS dummy FETs injects charge cancelling a charge injection by the PMOS signal switch FETs, and injects glitches cancelling glitches injected by the PMOS signal switch FETs.
摘要:
A decoder for decoding a compressed incoming interruptible bitstream is disclosed. The decoder includes an input register that is capable of receiving a latch command, and that is further capable of latching stored data in a particular state upon receiving the latch command. The decoder also includes decoding logic, such as variable length decoding logic, or run-length decoding logic, in communication with the input register. Further included in the decoder is an output register in communication with decoding logic, that is also capable of receiving the latch command, and that is further capable of latching stored data in a particular state upon receiving the latch command. Finally, the decoder includes a register controller in communication with both the input register and the output register. The register controller is capable of receiving a halt command from the system and, upon receiving the halt command, the register controller sends the latch command to both the input register and the output register.
摘要:
FIG. 1 is a front elevation view of a shaker cup bar tool stand showing the new design; FIG. 2 is a back elevation view thereof; FIG. 3 is a left-side view thereof; FIG. 4 is a right-side view thereof; FIG. 5 is a top plan view thereof; FIG. 6 is a bottom plan view thereof; FIG. 7 is a perspective view thereof; FIG. 8 is a perspective view thereof; and, FIG. 9 is a perspective view thereof. The broken lines depict portions of the article that form no part of the claimed design.
摘要:
Provided is a test structure for wafer acceptance test (WAT). The test structure includes a row of a plurality of first pads electrically connecting to each other, a second pad, a third pad, a first peripheral metal line, and a second peripheral metal line. The second pad is disposed in the vicinity of a first end of the row, wherein the second pad is electrically disconnected to the first pads. The third pad is disposed in the vicinity of a second end of the row, wherein the third pad is electrically disconnected to the first pads. The first peripheral metal line is disposed at a first side of the row and electrically connected to the second pad. The second peripheral metal line is disposed at a second side of the row and electrically connected to the third pad.
摘要:
Known attempts using engineered bacteria to produce P(3HB-co-4HB) with carbon sources that are structurally unrelated to 4-hydroxybutyrate resulted in relatively low 4HB monomer content of 1.5 to 5 mol %. The current invention provides recombinant hosts for producing P(3HB-co-4HB) wherein the plasmid including succinate semialdehyde dehydrogenase gene (sucD gene) and 4-hydroxybutyrate dehydrogenase gene (4hbD gene) further includes pyruvate decarboxylase promoter (Ppdc). It was found that the 4HB monomer content in P(3HB-co-4HB) is significantly enhanced to be over 20 mol %, in the range of 8.8 to 23 mol %.
摘要:
A sample-and-hold feed switch has parallel PMOS branches and parallel NMOS branches, each extending from an input node to an output node connected to a hold capacitor. Each PMOS branch has a PMOS switch FET connected to a matching PMOS dummy FET, and each NMOS branch has an NMOS switch FET connected to a matching NMOS dummy FET. A sample clock switches the PMOS switch FETs on and off, and a synchronous inverse sample clock effects complementary on-off switching of the PMOS dummy FETs. Concurrently, a synchronous inverse sample clock switches the NMOS switch FETs on and off, and the sample clock effects a complementary on-off switching of the NMOS dummy FETs. A bias sequencer circuit biases the bodies of the PMOS switch FETs and the bodies of the PMOS dummy FETs, in a complementary manner, and biases the NMOS switch FETs and the NMOS dummy FETs, also in a complementary manner. The on-off switching of the PMOS dummy FETs injects charge, cancelling a charge injection by the PMOS signal switch FETs, and injects glitches cancelling glitches injected by the PMOS signal switch FETs. The on-off switching of the NMOS dummy FETs injects charge that cancels a charge injection by the NMOS signal switch FETs, and injects glitches that cancels glitches injected by the NMOS signal switch FETs.
摘要:
An analog sample-and-hold switch has parallel branches extending from an input node to an output node connected to a hold capacitor, each branch having a PMOS signal switch FET in series with a PMOS dummy FET. A sample clock controls on-off switching of the PMOS signal switch FETs, and an inverse of the sample clock controls a complementary on-off switching of the PMOS dummy FETs. A bias sequencer circuit biases the PMOS signal switch FETs and biases the PMOS dummy FETs, in a complementary manner, synchronous with their respective on-off states. The on-off switching of the PMOS dummy FETs injects charge cancelling a charge injection by the PMOS signal switch FETs, and injects glitches cancelling glitches injected by the PMOS signal switch FETs.