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    PLASMA PROCESSING APPARATUS
    1.
    发明申请
    PLASMA PROCESSING APPARATUS 有权
    等离子体加工设备

    公开(公告)号：US20090159211A1

    公开(公告)日：2009-06-25

    申请号：US12041741

    申请日：2008-03-04

    申请人： Tatehito Usui ,  Tsuyoshi Yoshida ,  Tsuyoshi Matsumoto ,  Satoru Muto ,  Kenetsu Yokogawa

    发明人： Tatehito Usui ,  Tsuyoshi Yoshida ,  Tsuyoshi Matsumoto ,  Satoru Muto ,  Kenetsu Yokogawa

    IPC分类号： C23F1/08

    CPC分类号： H01J37/32972 ,  G01N21/68 ,  H01J37/32091 ,  H01J37/32935

    摘要： The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma.

    摘要翻译： 本发明提供了一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且利用正在处理的样品表面上的光学干涉来检测蚀刻终点，以同时实现长寿命并确保足够的光被接收 通过光发射单元，能够进行长期稳定的操作，并通过精确的蚀刻量检测来提高加工精度。 在用于通过在淋浴板和下部电极之间产生等离子体来处理被处理样品的等离子体处理装置中，用于检测经由淋浴板处理的样品的表面的光的检测器包括：光导体， 进入光的分光器和用于分析由光发射单元获得的光的分光镜，其中进入光的光透射单元的端面布置在气体的平均自由程的五倍或更大的距离 真空反应器内的分子从淋浴板的端面朝向等离子体。

    Plasma processing apparatus
    2.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US08083888B2

    公开(公告)日：2011-12-27

    申请号：US12041741

    申请日：2008-03-04

    申请人： Tatehito Usui ,  Tsuyoshi Yoshida ,  Tsuyoshi Matsumoto ,  Satoru Muto ,  Kenetsu Yokogawa

    发明人： Tatehito Usui ,  Tsuyoshi Yoshida ,  Tsuyoshi Matsumoto ,  Satoru Muto ,  Kenetsu Yokogawa

    IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

    CPC分类号： H01J37/32972 ,  G01N21/68 ,  H01J37/32091 ,  H01J37/32935

    摘要： The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma.

    摘要翻译： 本发明提供了一种用于测量被处理材料的蚀刻量的等离子体处理装置，并且利用正在处理的样品表面上的光学干涉来检测蚀刻终点，以同时实现长寿命并确保足够的光被接收 通过光发射单元，能够进行长期稳定的操作，并通过精确的蚀刻量检测来提高加工精度。 在用于通过在淋浴板和下部电极之间产生等离子体来处理被处理样品的等离子体处理装置中，用于检测经由淋浴板处理的样品的表面的光的检测器包括：光导体， 进入光的分光器和用于分析由光发射单元获得的光的分光镜，其中进入光的光透射单元的端面布置在气体的平均自由程的五倍或更大的距离 真空反应器内的分子从淋浴板的端面朝向等离子体。

    Image processing device, image processing program, and imaging device computing brightness value and color phase value
    6.
    发明授权
    Image processing device, image processing program, and imaging device computing brightness value and color phase value 有权
    图像处理装置，图像处理程序和成像装置计算亮度值和色相值

    公开(公告)号：US08665347B2

    公开(公告)日：2014-03-04

    申请号：US12839621

    申请日：2010-07-20

    申请人： Yu Miyawaki ,  Tsuyoshi Matsumoto

    发明人： Yu Miyawaki ,  Tsuyoshi Matsumoto

    IPC分类号： H04N9/68

    CPC分类号： G06T7/0002 ,  G06T7/12 ,  G06T2207/10024

    摘要： An image processing device comprises: a brilliance gradient computation unit computing a brilliance gradient within an image based on an image information; a color phase value computation unit computing a first color phase value and a second color phase value, the first color phase value representing a color phase inside a candidate region determined based on the brilliance gradient computed by the brilliance gradient computation unit, the second color phase value representing a color phase in a region surrounding the candidate region; and a region extraction unit extracting a region from the candidate region such that a difference between the first color phase value and the second color phase value is less than or equal to a predetermined threshold value.

    摘要翻译： 一种图像处理装置，包括：辉度梯度计算单元，基于图像信息计算图像内的亮度梯度; 彩色相位值计算单元，计算第一色相值和第二彩色相位值，所述第一色相值表示基于由辉度梯度计算单元计算出的亮度梯度确定的候选区域内的颜色相位，第二颜色相位 表示候选区域周围的区域中的颜色相位的值; 以及区域提取单元，从所述候选区域提取区域，使得所述第一色相位值和所述第二色相位值之间的差小于或等于预定阈值。

    Coil component
    7.
    发明授权
    Coil component 有权
    线圈组件

    公开(公告)号：US08643455B2

    公开(公告)日：2014-02-04

    申请号：US13295774

    申请日：2011-11-14

    申请人： Hideki Ogawa ,  Toshiyuki Yagasaki ,  Hiroya Shigemoto ,  Tsuyoshi Matsumoto ,  Hiroyuki Higuchi ,  Kiyoshi Tanaka

    发明人： Hideki Ogawa ,  Toshiyuki Yagasaki ,  Hiroya Shigemoto ,  Tsuyoshi Matsumoto ,  Hiroyuki Higuchi ,  Kiyoshi Tanaka

    IPC分类号： H01F27/02 ,  H01F38/12 ,  H01F27/29 ,  H01F27/30 ,  H01F17/04 ,  H01F27/24

    CPC分类号： H01F27/027 ,  H01F27/266 ,  H01F27/292

    摘要： As an embodiment, a pair of first conductive films 12, 13 are formed from the side face to the bottom face of the sheet part 11a of a magnetic core 11, and one end 14b of the conductive wire of the coil 14 and the other end 14c of the conductive wire are joined to the side faces 12a, 13a of the first conductive films 12, 13, respectively. Also, as an embodiment, the joined parts 14b1, 14c1 are sandwiched by the side faces 12a, 13a of the first conductive films 12, 13 and the part 15a of the magnetic sheath 15 covering the side face of the sheet part 11a of the magnetic core 11, wherein the parts of the magnetic sheath 15 covering the joined parts 14b1, 14c1 are sandwiched by the side faces 12a, 13a of the first conductive films 12, 13 and the side faces 16a, 17a of second conductive films 16, 17 as well as the side faces 18a, 19a of third conductive films 18, 19.

    摘要翻译： 作为实施例，从磁芯11的片部11a的侧面到底面形成一对第一导电膜12,13，线圈14的导线的一端14b，另一端 14c分别与第一导电膜12,13的侧面12a，13a接合。 此外，作为实施例，接合部分14b1,14c1被第一导电膜12,13的侧面12a，13a和磁性护套15的覆盖磁体的片状部分11a的侧面的部分15a夹着 芯11，其中覆盖接合部分14b1,14c1的磁性护套15的部分被第一导电膜12,13的侧面12a，13a和第二导电膜16,17的侧面16a，17a夹在中间 以及第三导电膜18,19的侧面18a，19a。

    FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE
    8.
    发明申请
    FEED MATERIAL FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE 有权
    用于单晶碳化硅的外延生长的材料以及单晶碳化硅的外延生长方法

    公开(公告)号：US20130269596A1

    公开(公告)日：2013-10-17

    申请号：US13995722

    申请日：2011-06-29

    申请人： Satoshi Torimi ,  Satoru Nogami ,  Tsuyoshi Matsumoto

    发明人： Satoshi Torimi ,  Satoru Nogami ,  Tsuyoshi Matsumoto

    IPC分类号： C30B19/12 ,  C30B29/36

    CPC分类号： C30B19/12 ,  C30B19/00 ,  C30B28/12 ,  C30B29/36 ,  Y10T428/26

    摘要： Provided is a feed material for epitaxial growth of a monocrystalline silicon carbide capable of increasing the rate of epitaxial growth of silicon carbide. A feed material 11 for epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer, a diffraction peak corresponding to a (111) crystal plane and a diffraction peak other than the diffraction peak corresponding to the (111) crystal plane are observed as diffraction peaks corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph.

    摘要翻译： 本发明提供一种能够提高碳化硅外延生长速率的单晶碳化硅的外延生长用原料。 用于单晶碳化硅的外延生长的原料11包括含有具有3C晶体多晶型物的多晶碳化硅的表面层。 在表面层的X射线衍射中，观察对应于（111）晶面的衍射峰和除了（111）晶面对应的衍射峰以外的衍射峰，作为与多晶碳化硅对应的衍射峰， 一个3C晶体多晶型。

    ROTARY GRINDING TOOL AND ITS PRODUCTION METHOD
    9.
    发明申请
    ROTARY GRINDING TOOL AND ITS PRODUCTION METHOD 有权
    旋转研磨工具及其生产方法

    公开(公告)号：US20120270484A1

    公开(公告)日：2012-10-25

    申请号：US13504381

    申请日：2010-12-21

    申请人： Atsumi Imai ,  Takehide Aiga ,  Masanori Nagai ,  Takayuki Sato ,  Kenji Fujimoto ,  Tsuyoshi Matsumoto ,  Hiroshi Kihira

    发明人： Atsumi Imai ,  Takehide Aiga ,  Masanori Nagai ,  Takayuki Sato ,  Kenji Fujimoto ,  Tsuyoshi Matsumoto ,  Hiroshi Kihira

    IPC分类号： B24D3/06 ,  B24D7/00

    CPC分类号： B24D3/06 ,  B24D7/02

    摘要： An inexpensive rotary grinding tool with reduced noise level of the grinding is provided. The rotary grinding tool comprises a metal disk having a grinding surface on at least a part of its surface and a holder for supporting the metal disk. The grinding surface has hard grains having a Mohs hardness in excess of 9 brazed thereon at a surface density of at least 20 grains/cm2. The holder has at its center a securing means for securing the holder on rotary shaft of a rotary drive unit. The holder and the metal disk are joined together to constitute the rotary grinding tool.

    摘要翻译： 提供了具有降低的磨削噪音水平的廉价的旋转磨削工具。 旋转研磨工具包括在其表面的至少一部分上具有研磨表面的金属盘和用于支撑金属盘的保持器。 磨削表面具有以至少20个/ cm 2的表面密度在其上钎焊的莫氏硬度超过9的硬质粒。 保持器在其中心具有用于将保持器固定在旋转驱动单元的旋转轴上的固定装置。 保持器和金属盘连接在一起以构成旋转研磨工具。