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公开(公告)号：US5904444A
公开(公告)日：1999-05-18
申请号：US757257
申请日：1996-11-27
申请人： Teruo Kabeuchi , Masaya Hattori , Takashi Togawa , Yukishige Yamada , Shigeaki Okuyama , Masao Nakagawa , Siro Sugiyama , Katsuhiko Mukuno , Kazunori Tsujimoto
发明人： Teruo Kabeuchi , Masaya Hattori , Takashi Togawa , Yukishige Yamada , Shigeaki Okuyama , Masao Nakagawa , Siro Sugiyama , Katsuhiko Mukuno , Kazunori Tsujimoto
摘要： A propelling apparatus includes a plurality of propellant cylinders series-connected to each other to be propelled by receiving a pushing force from behind, joints for series-connecting the propellant cylinders, a propellant head connected to a forward-most end of the propellant cylinders to be pressed into the earth, a leader member constituting a leading end of the propellant head, the leader member being rotatable about an axis of the propellant head by receiving a driving force from a driving device. An inclined pressure-receiving face is formed at a forward portion of the leader member for receiving an earth pressure in association with the underground propelling movement of the propellant head and steering the propellant head toward the direction of application of the earth pressure to the pressure-receiving face. The joint includes a flexible joint which is pivotally flexible about a transverse axis extending normal to an axis of the propellant cylinder.
摘要翻译： 推进装置包括通过从后面接收推动力而将彼此串联连接的多个推进剂气缸，用于串联连接推进剂气缸的接头，连接到推进剂气瓶的最前端的推进剂头， 被压入地球，构成推进剂头的前端的引导构件，引导构件可通过接收来自驱动装置的驱动力而围绕推进剂头的轴线旋转。 在引导构件的前部形成倾斜的受压面，用于与推进剂头的地下推进运动相关联地接收地压，并将推进剂头朝向施加压力的方向转向， 接受面。 接头包括柔性接头，该接头围绕垂直于推进剂汽缸的轴线延伸的横向轴线可枢转地挠曲。
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公开(公告)号：US5878825A
公开(公告)日：1999-03-09
申请号：US886220
申请日：1997-07-01
申请人： Shigeaki Okuyama , Teruo Kabeuchi , Katsuhiko Mukuno , Masaya Hattori , Kazunori Tsujimoto , Takashi Togawa , Yukishige Yamada , Masao Nakagawa , Siro Sugiyama
发明人： Shigeaki Okuyama , Teruo Kabeuchi , Katsuhiko Mukuno , Masaya Hattori , Kazunori Tsujimoto , Takashi Togawa , Yukishige Yamada , Masao Nakagawa , Siro Sugiyama
IPC分类号： E21B7/04 , E21B7/06 , E21B17/04 , E21B17/046 , E21B17/20 , E21B19/22 , E21B47/022
CPC分类号： E21B17/04 , E21B17/046 , E21B17/20 , E21B19/22 , E21B47/02224 , E21B7/046 , E21B7/06
摘要： An underground propelling method uses a propellant apparatus including a propellant head having a pressure receiving face portion inclined relative to an axis of the head and a plurality of propellant cylinders flexibly and pivotally connected in series to a rear end of the propellant head. The propellant apparatus is propelled under the ground by applying a thrust to the propellant apparatus from behind. Each propellant cylinder of the apparatus is pivotal about a single pivot axis thereof alone. The apparatus is propelled with the pressure receiving face portion thereof being oriented along a pivotal direction of the propellant cylinder about the pivot axis.
摘要翻译： 地下推进方法使用推进剂装置，其包括具有相对于头部轴线倾斜的压力接收面部分的推进剂头部和与推进剂头部的后端相互柔性和可枢转地连接的多个推进剂气缸。 推进剂装置通过从后面向推进剂装置施加推力在地面下推进。 装置的每个推进剂气缸单独围绕其单个枢转轴线枢转。 该装置被推进，其压力接收面部分沿着推进剂汽缸的枢转方向围绕枢转轴线定向。
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公开(公告)号：US20050074977A1
公开(公告)日：2005-04-07
申请号：US10402949
申请日：2003-04-01
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J37/32935 , H01J2237/3322 , H01J2237/334 , H01J2237/3343 , H01L21/02071 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。
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公开(公告)号：US6033481A
公开(公告)日：2000-03-07
申请号：US225971
申请日：1999-01-06
申请人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
发明人： Ken'etsu Yokogawa , Tetsuo Ono , Kazunori Tsujimoto , Naoshi Itabashi , Masahito Mori , Shinichi Tachi , Keizo Suzuki
CPC分类号： H01J37/3222 , H01J37/32082 , H01J37/32678 , H01J2237/3341
摘要： A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced. Further, a radical effective in etching can be increased by reaction between the surface of a planar conductive plate for radiating an electromagnetic wave and plasma.
摘要翻译： 公开了能够在大范围内产生均匀的等离子体并能够实现高蚀刻选择性和高纵横比的微小加工的功耗降低的等离子体处理装置。 利用由超高频带和磁场中的电磁波引起的电子回旋共振现象，在容纳加工样品的真空容器中产生高密度等离子体，并且使用该等离子体蚀刻处理样品的表面。 用于产生等离子体的超高频带中的电磁波从由石墨或硅组成的平面导电板辐射，该导电板与被处理样品的表面相对地设置在真空容器内部的空间中。 通过在超高频带中使用电磁波可以产生低解离度的高密度等离子体，结果可以提高蚀刻反应的可控性。 此外，通过用于辐射电磁波的平面导电板的表面与等离子体之间的反应可以增加蚀刻中有效的自由基。
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公开(公告)号：US5318667A
公开(公告)日：1994-06-07
申请号：US34126
申请日：1993-03-18
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00
CPC分类号： H01L21/3065 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/32935 , H01J37/32972 , H01L21/02071 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01J2237/3322 , H01J2237/334 , H01J2237/3343 , Y10S438/913 , Y10S438/978
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameter for controlling the first and second conditions are contemplated.
摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。
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公开(公告)号：US5242539A
公开(公告)日：1993-09-07
申请号：US859336
申请日：1992-03-27
申请人： Takao Kumihashi , Kazunori Tsujimoto , Shinichi Tachi , Masafumi Kanetomo , Junichi Kobayashi , Tatehito Usui , Nobuyuki Mise
发明人： Takao Kumihashi , Kazunori Tsujimoto , Shinichi Tachi , Masafumi Kanetomo , Junichi Kobayashi , Tatehito Usui , Nobuyuki Mise
IPC分类号： H01L21/302 , H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/02071 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01J2237/3322 , H01J2237/3343
摘要： A plasma treatment method and apparatus utilize various gas inlet and outlet structure arrangements to optimize treatment characteristics for a semiconductor wafer. A buffer zone is created between gas inlets and the discharge zone of the vacuum treatment chamber to enhance uniformity of gas flow. The evacuation arrangement enables reactant gas to be exhausted uniformly to reduce gas residence time below a threshold while maintaining optimum flow rates and etch uniformity at low effective exhaust speeds.
摘要翻译： 等离子体处理方法和装置利用各种气体入口和出口结构布置来优化半导体晶片的处理特性。 在气体入口和真空处理室的排放区之间产生缓冲区，以增强气体流动的均匀性。 排气装置使反应气体均匀排气，以将气体停留时间降低到阈值以下，同时在低有效排气速度下保持最佳流速和蚀刻均匀性。
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公开(公告)号：US4985114A
公开(公告)日：1991-01-15
申请号：US418223
申请日：1989-10-06
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32139 , H01L21/30655 , H01L21/3085 , H01L21/31144 , Y10S438/913
摘要： A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.
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公开(公告)号：US06333273B1
公开(公告)日：2001-12-25
申请号：US09648772
申请日：2000-08-28
IPC分类号： H01L2100
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J37/32935 , H01J2237/3322 , H01J2237/334 , H01J2237/3343 , H01L21/02071 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
摘要翻译： 用于干蚀刻的方法和装置改变真空室的有效泵送速度和气体流速中的至少一个，以改变样品在第一和第二条件之间的蚀刻图案侧壁的处理。 第一和第二条件包括存在或不存在沉积膜，或锥角的存在，不存在或形状。 考虑了用于控制第一和第二条件的各种参数。
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公开(公告)号：US6136721A
公开(公告)日：2000-10-24
申请号：US480477
申请日：2000-01-11
IPC分类号： H01J37/32 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01J37/32449 , H01J37/32082 , H01J37/32192 , H01J37/3244 , H01J37/32834 , H01J37/32935 , H01L21/02071 , H01L21/3065 , H01L21/30655 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01J2237/3322 , H01J2237/334 , H01J2237/3343
摘要： A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
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公开(公告)号：US5270232A
公开(公告)日：1993-12-14
申请号：US943018
申请日：1992-09-10
申请人： Shinichiro Kimura , Shoji Shukuri , Hiromasa Noda , Digh Hisamoto , Hideyuki Matsuoka , Kazuyoshi Torii , Natsuki Yokoyama , Toshiyuki Yoshimura , Kazunori Tsujimoto , Eiji Takeda
发明人： Shinichiro Kimura , Shoji Shukuri , Hiromasa Noda , Digh Hisamoto , Hideyuki Matsuoka , Kazuyoshi Torii , Natsuki Yokoyama , Toshiyuki Yoshimura , Kazunori Tsujimoto , Eiji Takeda
IPC分类号： H01L29/78 , H01L21/285 , H01L21/336 , H01L21/70
CPC分类号： H01L29/66606 , H01L21/28525 , H01L29/66621 , Y10S438/947
摘要： A very thin oxide film is formed at an opening formed in an insulator film and a conductor layer, on a substrate, and impurity-containing polysilicon is formed on the sidewall of the opening. Impurity diffusion from the from the silicon into the substrate through the very thin oxide film causes a lowering in effective concentration of the diffused impurities, resulting in the formation of shallower source/drain region. Thereafter, a gate insulator film and a gate electrode are formed on the substrate surface in an area bounded by an insulator film formed on the sidewall of the opening. The gate electrode smaller than the opening, the size of which corresponds to the limit of processing, and the shallower source/drain region afford a miniaturized MOSFET.
摘要翻译： 在基板上形成绝缘体膜和导体层的开口处形成非常薄的氧化膜，并且在开口的侧壁上形成含杂质的多晶硅。 通过非常薄的氧化膜从硅到衬底的杂质扩散导致扩散杂质的有效浓度降低，导致形成较浅的源/漏区。 此后，在由形成在开口的侧壁上的绝缘膜限定的区域中的基板表面上形成栅绝缘膜和栅电极。 小于开口的栅极电极，其尺寸对应于处理极限，并且较浅的源极/漏极区域提供小型化的MOSFET。
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