公开(公告)号：US06429506B1

公开(公告)日：2002-08-06

申请号：US09525514

申请日：2000-03-15

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21301

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US07091109B2

公开(公告)日：2006-08-15

申请号：US10896042

申请日：2004-07-22

申请人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21/46 ,  H01L21/50

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

公开(公告)号：US06255741B1

公开(公告)日：2001-07-03

申请号：US09270745

申请日：1999-03-16

申请人： Shinji Yoshihara ,  Sumitomo Inomata ,  Kinya Atsumi ,  Minekazu Sakai ,  Yasuki Shimoyama ,  Tetsuo Fujii

发明人： Shinji Yoshihara ,  Sumitomo Inomata ,  Kinya Atsumi ,  Minekazu Sakai ,  Yasuki Shimoyama ,  Tetsuo Fujii

IPC分类号： G01P100

CPC分类号： B81B7/0058 ,  B81C1/00896 ,  G01P1/023 ,  G01P15/0802 ,  H01L23/3164 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A heat resisting resin sheet is bonded to a semiconductor chip as a protective cap for protecting a beam structure provided on the semiconductor chip, through a heat resisting adhesive. The heat resisting resin sheet is composed of a polyimide base member and the heat resisting adhesive is composed of silicone adhesive. The heat resisting resin sheet is not deformed during a manufacturing process of the semiconductor chip. In addition, grinding water does not invade into the semiconductor chip during dicing-cut.

摘要翻译： 耐热性树脂片通过耐热粘合剂与半导体芯片接合，作为用于保护设置在半导体芯片上的梁结构的保护帽。 耐热性树脂片由聚酰亚胺基材构成，耐热粘合剂由硅酮粘合剂构成。 耐热性树脂片在半导体芯片的制造工序中不变形。 此外，切割时切削水不会侵入半导体芯片。

公开(公告)号：US5824177A

公开(公告)日：1998-10-20

申请号：US678822

申请日：1996-07-12

申请人： Shinji Yoshihara ,  Sumitomo Inomata ,  Fumio Ohara ,  Takashi Kurahashi

发明人： Shinji Yoshihara ,  Sumitomo Inomata ,  Fumio Ohara ,  Takashi Kurahashi

IPC分类号： B29C43/36 ,  B81C1/00 ,  H01L21/301 ,  H01L21/78 ,  B32B31/18

CPC分类号： B81C1/00888 ,  B29C43/36 ,  H01L21/78 ,  B29C2043/023 ,  B29C33/0022 ,  Y10T156/1052

摘要： A semiconductor wafer, which can be divided into chips at a high yield and a low cost and easily handled during transfer thereof as well, is disclosed. In a semiconductor wafer of such structure that structures with a low mechanical strength, such as suspended microstructures, are exposed at a surface thereof, detachable adhesive sheet making up protective caps for the respective suspended microstructures are formed over the semiconductor wafer. By means of this, even if the semiconductor wafer is diced into the individual chips, respective microstructures on chips are protected from the external force, such as the pressure of cutting water, during the dicing process.

摘要翻译： 公开了一种半导体晶片，其可以以高产率和低成本分为芯片，并且在其转移期间也容易处理。 在这样的结构的半导体晶片中，具有低机械强度的结构（例如悬浮微结构）在其表面露出，在半导体晶片上形成用于各个悬浮微结构的可拆卸粘合片。 借此，即使将半导体晶片切割成各个芯片，在切割处理期间，可以保护芯片上的各自的微结构免受诸如切割水的压力的外力。

公开(公告)号：US20110147493A1

公开(公告)日：2011-06-23

申请号：US12971570

申请日：2010-12-17

申请人： Yoshihito MITSUOKA ,  Kazunori Suzuki ,  Yasuo Kitou ,  Sumitomo Inomata

发明人： Yoshihito MITSUOKA ,  Kazunori Suzuki ,  Yasuo Kitou ,  Sumitomo Inomata

IPC分类号： F02M63/00 ,  B23K26/00 ,  B32B3/30

CPC分类号： B23K26/36 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  F02M51/0671 ,  F02M61/1853 ,  F02M2200/8069 ,  Y10T428/12389

摘要： A method is for forming a periodic groove arrangement. According to the method, a base material made of metal is provided. Furthermore, the periodic groove arrangement, which includes a plurality of periodic grooves, is formed on a surface of the base material by irradiating and scanning the surface of the base material with a pulsed laser. A fuel injection system includes a nozzle hole forming part and the periodic groove arrangement formed by the method. The nozzle hole forming part includes a nozzle hole, which passes through the nozzle hole forming part and through which fuel is injected. The periodic groove arrangement is formed on an outer surface of the nozzle hole forming part.

摘要翻译： 一种用于形成周期性凹槽布置的方法。 根据该方法，提供由金属制成的基材。 此外，通过用脉冲激光照射和扫描基材的表面，在基材的表面上形成包括多个周期性凹槽的周期性凹槽布置。 燃料喷射系统包括喷嘴孔形成部分和通过该方法形成的周期槽布置。 喷嘴孔形成部分包括喷嘴孔，该喷嘴孔穿过喷嘴孔形成部分并且喷射燃料。 周期槽布置形成在喷嘴孔形成部分的外表面上。

公开(公告)号：US06495796B2

公开(公告)日：2002-12-17

申请号：US09912058

申请日：2001-07-25

申请人： Terukazu Fukaya ,  Takashi Nakayama ,  Sumitomo Inomata ,  Michio Kameyama ,  Seiji Tachibana

发明人： Terukazu Fukaya ,  Takashi Nakayama ,  Sumitomo Inomata ,  Michio Kameyama ,  Seiji Tachibana

IPC分类号： B23K2638

CPC分类号： B23K26/1438 ,  B23K26/1435 ,  B23K26/1476 ,  B23K26/16 ,  B23K26/382 ,  B23K26/40 ,  B23K26/704 ,  B23K2103/50

摘要： A discharging nozzle is provided in an inside space of a metal cylinder for supplying an assist gas from an inside of the metal cylinder. The gas discharging nozzle shuts a high density energy beam intruding into the inside space of the metal cylinder through a hole, so that the energy beam is prevented from being emitted to an opposite side inner surface of the metal cylinder. Dross formed during the cut-machining is drifted and swept to the outside by an assist gas flowing out from the inside space of the metal cylinder through the hole, and is blown out by the assist gas flowing on an outside surface of the metal cylinder around the hole, thereby preventing the dross from sticking to peripheral area of the hole.

摘要翻译： 在金属筒的内部空间设置有排出喷嘴，用于从金属缸的内部供给辅助气体。 气体排出喷嘴关闭通过孔侵入金属筒的内部空间的高密度能量束，防止能量束向金属筒的相对侧内面喷射。 在切削加工期间形成的浮渣通过从金属圆筒的内部空间流出的辅助气体穿过该孔而漂移并扫过外部，并且被在金属圆筒的外表面上流动的辅助气体吹出 从而防止浮渣粘附到孔的周边区域。

公开(公告)号：US08758087B2

公开(公告)日：2014-06-24

申请号：US13114141

申请日：2011-05-24

申请人： Kyohei Koutake ,  Hiromichi Morita ,  Fumiyoshi Kano ,  Tetsuji Yamaguchi ,  Sumitomo Inomata ,  Masatake Nagaya

发明人： Kyohei Koutake ,  Hiromichi Morita ,  Fumiyoshi Kano ,  Tetsuji Yamaguchi ,  Sumitomo Inomata ,  Masatake Nagaya

IPC分类号： B24B1/00 ,  B24B49/16

CPC分类号： B28D5/022 ,  B28D5/0082 ,  H01L21/02008 ,  H01L21/02013

摘要： In a wafer processing method, an ingot is sliced into a wafer and the wafer is planarized by polishing a surface of the wafer. When the wafer is planarized, the wafer is disposed on a wafer holder and the wafer is rotated, a heat quantity is applied to a portion of the wafer so as to form a reformed layer at the portion of the wafer, and a polishing tool is brought into contact with the portion of wafer while rotating so as to polish the portion of the wafer.

摘要翻译： 在晶片处理方法中，将锭切成晶片，通过抛光晶片的表面使晶片平坦化。 当晶片平坦化时，将晶片设置在晶片保持器上并且晶片旋转，将热量施加到晶片的一部分，以在晶片的部分形成重整层，并且抛光工具 在旋转的同时与晶片的该部分接触以抛光晶片的该部分。

公开(公告)号：US20110294403A1

公开(公告)日：2011-12-01

申请号：US13114141

申请日：2011-05-24

申请人： Kyohei KOUTAKE ,  Hiromichi Morita ,  Fumiyoshi Kano ,  Tetsuji Yamaguchi ,  Sumitomo Inomata ,  Masatake Nagaya

发明人： Kyohei KOUTAKE ,  Hiromichi Morita ,  Fumiyoshi Kano ,  Tetsuji Yamaguchi ,  Sumitomo Inomata ,  Masatake Nagaya

IPC分类号： B24B1/00 ,  B28D1/02 ,  B24B49/16

CPC分类号： B28D5/022 ,  B28D5/0082 ,  H01L21/02008 ,  H01L21/02013

摘要： In a wafer processing method, an ingot is sliced into a wafer and the wafer is planarized by polishing a surface of the wafer. When the wafer is planarized, the wafer is disposed on a wafer holder and the wafer is rotated, a heat quantity is applied to a portion of the wafer so as to form a reformed layer at the portion of the wafer, and a polishing tool is brought into contact with the portion of wafer while rotating so as to polish the portion of the wafer.

摘要翻译： 在晶片处理方法中，将锭切成晶片，通过抛光晶片的表面使晶片平坦化。 当晶片平坦化时，将晶片设置在晶片保持器上并且晶片旋转，将热量施加到晶片的一部分，以在晶片的部分形成重整层，并且抛光工具 在旋转的同时与晶片的该部分接触以抛光晶片的该部分。

公开(公告)号：US20060065648A1

公开(公告)日：2006-03-30

申请号：US11159263

申请日：2005-06-23

申请人： Michio Kameyama ,  Sumitomo Inomata ,  Terukazu Fukaya ,  Eiji Kumagai ,  Hiromichi Morita

发明人： Michio Kameyama ,  Sumitomo Inomata ,  Terukazu Fukaya ,  Eiji Kumagai ,  Hiromichi Morita

IPC分类号： B23K26/38

CPC分类号： B23K26/046 ,  B23K26/0093 ,  B23K26/361

摘要： A burr removing device for removing a burr, which is formed at a connection between a first hole and a second hole that are angled relative to each other inside a workpiece. According to the burr removing device, a generated high-density energy beam is converged by a converging lens, which is located outside of the first and second holes of the workpiece. Then, the converged high-density energy beam is reflected toward the burr by a one reflecting mirror, which is located in one of the first and second holes.

摘要翻译： 一种用于除去毛刺的毛刺去除装置，其形成在第一孔和第二孔之间的连接处，所述连接在工件内相对于彼此成角度。 根据毛刺去除装置，产生的高密度能量束由位于工件的第一和第二孔外侧的会聚透镜会聚。 然后，会聚的高密度能量束通过位于第一孔和第二孔之一中的一个反射镜朝向毛刺反射。

公开(公告)号：US20050230370A1

公开(公告)日：2005-10-20

申请号：US11091761

申请日：2005-03-29

申请人： Michio Kameyama ,  Sumitomo Inomata ,  Eiji Kumagai ,  Tetsuaki Kamiya ,  Takashi Ogata ,  Tsuyoshi Hayakawa

发明人： Michio Kameyama ,  Sumitomo Inomata ,  Eiji Kumagai ,  Tetsuaki Kamiya ,  Takashi Ogata ,  Tsuyoshi Hayakawa

IPC分类号： B23K26/00 ,  B23K26/04 ,  B23K26/38

CPC分类号： B23K26/046 ,  B23K26/384

摘要： A method for machining an object includes the steps of: forming a hole in the object by a laser beam having a first focus point; and reforming the hole by the laser beam having a second focus point, which is different from the first focus point. The first and the second focus points are disposed on a same light axis. In at least one of the step of forming the hole and the step of reforming the hole, the object is machined by a diffusion and a condensation of the laser beam in the object.

摘要翻译： 一种用于加工物体的方法包括以下步骤：通过具有第一焦点的激光束在物体中形成孔; 并且通过具有与第一焦点不同的第二焦点的激光束对该孔进行重整。 第一和第二焦点位于相同的光轴上。 在形成孔的步骤和重整孔的步骤中的至少一个中，通过激光束在物体中的扩散和冷凝来加工物体。