公开(公告)号：US5824177A

公开(公告)日：1998-10-20

申请号：US678822

申请日：1996-07-12

申请人： Shinji Yoshihara ,  Sumitomo Inomata ,  Fumio Ohara ,  Takashi Kurahashi

发明人： Shinji Yoshihara ,  Sumitomo Inomata ,  Fumio Ohara ,  Takashi Kurahashi

IPC分类号： B29C43/36 ,  B81C1/00 ,  H01L21/301 ,  H01L21/78 ,  B32B31/18

CPC分类号： B81C1/00888 ,  B29C43/36 ,  H01L21/78 ,  B29C2043/023 ,  B29C33/0022 ,  Y10T156/1052

摘要： A semiconductor wafer, which can be divided into chips at a high yield and a low cost and easily handled during transfer thereof as well, is disclosed. In a semiconductor wafer of such structure that structures with a low mechanical strength, such as suspended microstructures, are exposed at a surface thereof, detachable adhesive sheet making up protective caps for the respective suspended microstructures are formed over the semiconductor wafer. By means of this, even if the semiconductor wafer is diced into the individual chips, respective microstructures on chips are protected from the external force, such as the pressure of cutting water, during the dicing process.

摘要翻译： 公开了一种半导体晶片，其可以以高产率和低成本分为芯片，并且在其转移期间也容易处理。 在这样的结构的半导体晶片中，具有低机械强度的结构（例如悬浮微结构）在其表面露出，在半导体晶片上形成用于各个悬浮微结构的可拆卸粘合片。 借此，即使将半导体晶片切割成各个芯片，在切割处理期间，可以保护芯片上的各自的微结构免受诸如切割水的压力的外力。

公开(公告)号：US5668033A

公开(公告)日：1997-09-16

申请号：US648968

申请日：1996-05-17

申请人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

发明人： Fumio Ohara ,  Shinji Yoshihara ,  Katuhiko Kanamori ,  Takashi Kurahashi

IPC分类号： H01L29/84 ,  B29C43/36 ,  B81C1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  H01L21/301 ,  H01L21/822 ,  H01L23/053 ,  H01L23/10 ,  H01L27/04 ,  H01L21/304

CPC分类号： B29C43/36 ,  B81C1/00301 ,  B81C1/00865 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/124 ,  H01L23/053 ,  H01L23/10 ,  B29C2043/023 ,  B29C33/0022 ,  B81B2207/093 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/16152 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S148/012

摘要： On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.

摘要翻译： 在硅晶片上形成可移动栅极MOS晶体管（感测元件：功能元件）。 由硅薄膜构成的接合框架围绕硅晶片的表面上的元件形成区域进行图案化。 在形成硅晶片的盖上，在底面上突出设置有腿部，形成由金膜构成的接合层。 盖形成硅晶片设置在硅晶片上，于是相对于其加热在高于金/硅共晶温度的温度下进行，从而使硅晶片的接合框架和接合层之间的粘结 盖形成硅晶片。 此后，两片晶片以芯片单元切割。

公开(公告)号：US07091109B2

公开(公告)日：2006-08-15

申请号：US10896042

申请日：2004-07-22

申请人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Hiroshi Muto ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21/46 ,  H01L21/50

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

公开(公告)号：US06429506B1

公开(公告)日：2002-08-06

申请号：US09525514

申请日：2000-03-15

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21301

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06555901B1

公开(公告)日：2003-04-29

申请号：US08943146

申请日：1997-10-03

申请人： Shinji Yoshihara ,  Fumio Ohara ,  Masao Nagakubo

发明人： Shinji Yoshihara ,  Fumio Ohara ,  Masao Nagakubo

IPC分类号： H01L2306

CPC分类号： B81C1/00269 ,  B81C1/00357 ,  B81C1/00873 ,  B81C2201/019 ,  G01P15/0802 ,  G01P15/124 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/16235 ,  H01L2924/00

摘要： A sensing element is formed on a silicon (Si) substrate and covered with a cap. The cap has a leg portion having a titanium layer and a gold layer formed in that order on the lower surface thereof. The silicon substrate has an Si bonding frame at a position corresponding to the leg portion. When bonding the Si bonding frame of the silicon substrate and the leg portion of the cap, the titanium layer deoxidizes a naturally oxidized silicon layer formed on the Si bonding frame, whereby the silicon substrate and the cap can be uniformly bonded together with an Au/Si eutectic portion interposed therebetween. In this case, the Au/Si eutectic portion includes a titanium oxide accompanying the deoxidization of the naturally oxidized silicon layer.

摘要翻译： 感测元件形成在硅（Si）衬底上并被盖覆盖。 盖具有在其下表面上依次形成钛层和金层的腿部。 硅衬底在对应于腿部的位置处具有Si接合框架。 当结合硅基板的Si接合框架和盖的腿部时，钛层对形成在Si接合框架上的自然氧化的硅层进行脱氧，从而可以将硅基板和盖子与Au / Si共晶部分插入其间。 在这种情况下，Au / Si共晶部分包括伴随着氧化硅层的脱氧的氧化钛。

公开(公告)号：US06255741B1

公开(公告)日：2001-07-03

申请号：US09270745

申请日：1999-03-16

申请人： Shinji Yoshihara ,  Sumitomo Inomata ,  Kinya Atsumi ,  Minekazu Sakai ,  Yasuki Shimoyama ,  Tetsuo Fujii

发明人： Shinji Yoshihara ,  Sumitomo Inomata ,  Kinya Atsumi ,  Minekazu Sakai ,  Yasuki Shimoyama ,  Tetsuo Fujii

IPC分类号： G01P100

CPC分类号： B81B7/0058 ,  B81C1/00896 ,  G01P1/023 ,  G01P15/0802 ,  H01L23/3164 ,  H01L23/564 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A heat resisting resin sheet is bonded to a semiconductor chip as a protective cap for protecting a beam structure provided on the semiconductor chip, through a heat resisting adhesive. The heat resisting resin sheet is composed of a polyimide base member and the heat resisting adhesive is composed of silicone adhesive. The heat resisting resin sheet is not deformed during a manufacturing process of the semiconductor chip. In addition, grinding water does not invade into the semiconductor chip during dicing-cut.

摘要翻译： 耐热性树脂片通过耐热粘合剂与半导体芯片接合，作为用于保护设置在半导体芯片上的梁结构的保护帽。 耐热性树脂片由聚酰亚胺基材构成，耐热粘合剂由硅酮粘合剂构成。 耐热性树脂片在半导体芯片的制造工序中不变形。 此外，切割时切削水不会侵入半导体芯片。

公开(公告)号：US10697047B2

公开(公告)日：2020-06-30

申请号：US13323056

申请日：2011-12-12

申请人： Yukimasa Miyata ,  Shinji Yoshihara

发明人： Yukimasa Miyata ,  Shinji Yoshihara

IPC分类号： C22C21/10

摘要： An aluminum alloy extruded material in relation with the present invention is with high strength by die quench air cooling and excellent in SCC resistance. The aluminum alloy extruded material is an Al—Zn—Mg-based aluminum alloy extruded material for structural member for automobiles such as a bumper reinforce, a door guard bar and the like which satisfies three expressions of 5.0≤[Zn]≤7.0, [Zn]/5.38

公开(公告)号：US08876993B2

公开(公告)日：2014-11-04

申请号：US13419798

申请日：2012-03-14

申请人： Yukimasa Miyata ,  Shinji Yoshihara ,  Minwoo Kang

发明人： Yukimasa Miyata ,  Shinji Yoshihara ,  Minwoo Kang

IPC分类号： C22F1/053

CPC分类号： C22F1/053 ,  C21D1/673 ,  C22C21/10

摘要： A casted ingot of a heat treatment type Al—Zn—Mg series aluminum alloy comprising Zn: 4.0-8.0% by mass, Mg: 0.5-2.0% by mass, Cu: 0.05-0.5% by mass, Ti: 0.01-0.1% by mass, and any one or more of Mn: 0.1-0.7% by mass, Cr: 0.1-0.5% by mass and Zr: 0.05-0.3% by mass, and the balance being aluminum and incidental impurities is extruded at a homogenization treatment temperature after a homogenization treatment without cooled, and a resulted extruded material is die quenched at a cooling rate equal to or more than 100° C./min and then subjected to an artificial aging treatment, wherein the homogenization treatment is carried out by heating to the homogenization treatment temperature as 430-500° C. at a heating rate less than 750° C./hr or by heating to the homogenization treatment temperature and held the homogenization treatment temperature for 3 hours.

摘要翻译： 含有Zn：4.0〜8.0质量％，Mg：0.5〜2.0质量％，Cu：0.05〜0.5质量％，Ti：0.01-0.1质量％的热处理型Al-Zn-Mg系铝合金铸造锭， ，Mn：0.1-0.7质量％，Cr：0.1-0.5质量％，Zr：0.05〜0.3质量％中的任一种或以上，余量由铝和附带杂质在均化处理中挤出 未冷却均质处理后的温度，所得到的挤出材料以等于或大于100℃/分钟的冷却速度进行猝熄，然后进行人造时效处理，其中均化处理通过加热至 均质处理温度为430-500℃，加热速率小于750℃/小时或通过加热至均化处理温度并保持均化处理温度3小时。

公开(公告)号：US20130146183A1

公开(公告)日：2013-06-13

申请号：US13323056

申请日：2011-12-12

申请人： Yukimasa MIYATA ,  Shinji Yoshihara

发明人： Yukimasa MIYATA ,  Shinji Yoshihara

IPC分类号： C22C21/10 ,  C22C21/06

摘要： An aluminum alloy extruded material in relation with the present invention is with high strength by die quench air cooling and excellent in SCC resistance. The aluminum alloy extruded material is an Al—Zn—Mg-based aluminum alloy extruded material for structural member for automobiles such as a bumper reinforce, a door guard bar and the like which satisfies three expressions of 5.0≦[Zn]7.0, [Zn]/5.38

摘要翻译： 与本发明相关的铝合金挤压材料通过模淬气冷却具有高强度，并且具有优异的耐SCC性。 铝合金挤压材料是用于汽车结构件的Al-Zn-Mg基铝合金挤压材料，例如保险杠加强件，门防护棒等，其满足5.0 @ [Zn] 7.0，[Zn ] /5.38 [[Mg] @ [Zn] /5.38+0.7和[Zn] +4.7 [Mg] @14，其中[Mg]表示Mg的质量％，[Zn]表示Zn的质量％，并且包含 Cu中的至少一种元素：0.1-0.6质量％，Ag：0.01-0.15质量％，Ti：0.005-0.05质量％，Mn中至少一种元素：0.1-0.3质量％，Cr：0.05-0.2质量％ ％，Zr：0.05〜0.2质量％。

公开(公告)号：US06658948B2

公开(公告)日：2003-12-09

申请号：US10053705

申请日：2002-01-24

申请人： Shinji Yoshihara ,  Yasutoshi Suzuki

发明人： Shinji Yoshihara ,  Yasutoshi Suzuki

IPC分类号： G01L122

CPC分类号： G01L9/06 ,  G01L9/0054

摘要： A bridge circuit includes four gage resistors. Each gage resistor is divided into two division gage resistors. A couple of division gage resistors. The junction points between division gage resistors outputting the same potential when no pressure is applied are used for diagnostic. Four gage resistors out of the eight gage resistors are arranged near the center of diaphragm 14, and the other four division resistors are arranged near the peripheral edge portion of the diaphragm 14 to make the stress distribution even.

摘要翻译： 桥接电路包括四个量规电阻。 每个量规电阻分为两个分压计电阻。 一对分压计电阻。 在不施加压力时输出相同电位的分压计电阻之间的接点用于诊断。 八个量具电阻器中的四个量规电阻器布置在隔膜14的中心附近，另外四个除法电阻器布置在隔膜14的周缘部分附近，使应力分布均匀。