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    Semiconductor dynamic quantity sensor and method of manufacturing the same
    1.
    发明授权
    Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
    半导体动态量传感器及其制造方法

    公开(公告)号：US08413507B2

    公开(公告)日：2013-04-09

    申请号：US12801405

    申请日：2010-06-08

    申请人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

    发明人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

    IPC分类号： G01C19/56 ,  G01P15/125

    CPC分类号： H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

    摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

    摘要翻译： 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。

    Semiconductor dynamic quantity sensor and method of manufacturing the same
    2.
    发明申请
    Semiconductor dynamic quantity sensor and method of manufacturing the same 有权
    半导体动态量传感器及其制造方法

    公开(公告)号：US20100307246A1

    公开(公告)日：2010-12-09

    申请号：US12801405

    申请日：2010-06-08

    申请人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

    发明人： Tetsuo Fujii ,  Hisanori Yokura ,  Hirofumi Higuchi

    IPC分类号： G01P15/00 ,  H01L21/02 ,  H01L29/84

    CPC分类号： H01L27/1203 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2201/047 ,  B81C1/00182 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/84

    摘要： A semiconductor dynamic quantity sensor has a substrate including a semiconductor substrate, an insulation layer on a main surface of the semiconductor substrate, and a semiconductor layer on the insulation layer. The main surface has a projection that is trapezoidal or triangular in cross section. The semiconductor layer is divided by a through hole into a movable portion. A tip of the projection is located directly below the movable portion and spaced from the movable portion by a predetermined distance in a thickness direction of the substrate. A width of the tip of the projection is less than a width of the movable portion in a planar direction of the substrate. The distance between the tip of the projection and the movable portion is equal to a thickness of the insulation layer.

    摘要翻译： 半导体动态量传感器具有包括半导体衬底，半导体衬底的主表面上的绝缘层和绝缘层上的半导体层的衬底。 主表面具有横截面为梯形或三角形的突起。 半导体层由通孔分割成可动部。 突出部的尖端位于可动部的正下方，与基板的厚度方向与可动部隔开预定的距离。 突起的尖端的宽度小于基板的平面方向上的可动部的宽度。 突起的尖端和可动部之间的距离等于绝缘层的厚度。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08497557B2

    公开(公告)日：2013-07-30

    申请号：US12754036

    申请日：2010-04-05

    申请人： Masaya Tanaka ,  Tetsuo Fujii ,  Hisanori Yokura

    发明人： Masaya Tanaka ,  Tetsuo Fujii ,  Hisanori Yokura

    IPC分类号： H01L29/84

    CPC分类号： B81B7/0041 ,  B81C2203/019 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.

    摘要翻译： 半导体器件包括第一半导体衬底，第二半导体衬底和密封构件。 第一半导体衬底具有表面并且在表面侧包括感测部分。 感测部分具有可移动部分。 将第一半导体衬底和第二半导体衬底接合在一起以形成堆叠衬底。 堆叠的衬底限定用于在第一和第二半导体衬底之间容纳感测部分的气密密封空间。 堆叠的衬底还限定了在第一半导体衬底和第二半导体衬底之间延伸的凹部，以穿透第一半导体衬底和第二半导体衬底之间的界面。 密封件位于凹槽中。

    Semiconductor dymamic quantity sensor and method of producing the same
    6.
    发明申请
    Semiconductor dymamic quantity sensor and method of producing the same 有权
    半导体量子传感器及其制造方法

    公开(公告)号：US20100117167A1

    公开(公告)日：2010-05-13

    申请号：US12588421

    申请日：2009-10-15

    申请人： Hisanori Yokura ,  Tetsuo Fujii

    发明人： Hisanori Yokura ,  Tetsuo Fujii

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： G01P15/125 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0831

    摘要： A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

    摘要翻译： 半导体动态量传感器包括与传感器部连接的传感器部和盖。 基于在传感器部件的可动电极和固定电极之间限定的电容器的电容来检测动态量。 传感器部分的浮动部分与传感器部件的支撑板分离以限定预定间隔。 盖和支撑板中的至少一个具有移位部分，以使浮子部分沿垂直于支撑板的方向移动，从而改变预定间隔。 可移动电极具有根据移位的浮子部分的位移。

    Semiconductor dynamic quantity sensor and method of producing the same
    8.
    发明授权
    Semiconductor dynamic quantity sensor and method of producing the same 有权
    半导体动态量传感器及其制造方法

    公开(公告)号：US08106471B2

    公开(公告)日：2012-01-31

    申请号：US12588421

    申请日：2009-10-15

    申请人： Hisanori Yokura ,  Tetsuo Fujii

    发明人： Hisanori Yokura ,  Tetsuo Fujii

    IPC分类号： H01L29/788

    CPC分类号： G01P15/125 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/082 ,  G01P2015/0831

    摘要： A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.

    摘要翻译： 半导体动态量传感器包括与传感器部连接的传感器部和盖。 基于在传感器部件的可动电极和固定电极之间限定的电容器的电容来检测动态量。 传感器部分的浮动部分与传感器部件的支撑板分离以限定预定间隔。 盖和支撑板中的至少一个具有移位部分，以使浮子部分沿垂直于支撑板的方向移动，从而改变预定间隔。 可移动电极具有根据移位的浮子部分的位移。

    Semiconductor device and method of making the same
    10.
    发明申请
    Semiconductor device and method of making the same 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20100155865A1

    公开(公告)日：2010-06-24

    申请号：US12654002

    申请日：2009-12-08

    申请人： Kazuhiko Sugiura ,  Tetsuo Fujii ,  Hisanori Yokura

    发明人： Kazuhiko Sugiura ,  Tetsuo Fujii ,  Hisanori Yokura

    IPC分类号： H01L29/84 ,  H01L21/78

    CPC分类号： B81C1/00134 ,  B81B2207/095 ,  B81C1/00269 ,  B81C1/00301 ,  H01L2224/48463 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105

    摘要： A semiconductor device includes a sensor portion, a cap portion, and an ion-implanted layer. The sensor portion has a sensor structure at a surface portion of a surface. The cap portion has first and second surfaces opposite to each other and includes a through electrode. The surface of the sensor portion is joined to the first surface of the cap portion such that the sensor structure is sealed between the sensor portion and the cap portion. The ion-implanted layer is located on the second surface of the cap portion. The through electrode extends from the first surface to the second surface and is exposed through the ion-implanted layer.

    摘要翻译： 半导体器件包括传感器部分，帽部分和离子注入层。 传感器部分在表面的表面部分具有传感器结构。 盖部具有彼此相对的第一和第二表面，并且包括通孔。 传感器部分的表面与盖部分的第一表面接合，使得传感器结构被密封在传感器部分和盖部分之间。 离子注入层位于帽部的第二表面上。 通孔从第一表面延伸到第二表面，并通过离子注入层暴露。