公开(公告)号：US06887727B2

公开(公告)日：2005-05-03

申请号：US10352491

申请日：2003-01-28

Applicant: Tetsuya Takeuchi ,  Ying-Ian Chang

Inventor： Tetsuya Takeuchi ,  Ying-Ian Chang

IPC: C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/125 ,  H01S5/323 ,  H01L21/20

CPC classification number: H01L33/32 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

Abstract translation: 公开了一种用于生长半导体材料层的方法和系统。 该方法可用于生长包含至少一种III族元素，氮和至少一种其它V族元素作为其构成元素的半导体材料层，该方法包括提供反应器并向反应器供应前体。 前体包括用于至少一种III族元素中的每一种的前体，氮的前体，除氮以外的至少一种第V族元素中的每一种的前体，以及具有与 与所述至少一种III族元素中的每一个具有氮的氮相同。 该方法可以在例如金属有机化学气相沉积（MOCVD）反应器中实现。

公开(公告)号：US06934312B2

公开(公告)日：2005-08-23

申请号：US10261754

申请日：2002-09-30

Applicant: Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

Inventor： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

IPC: C23C16/34 ,  H01L21/205 ,  H01S5/183 ,  H01S5/323 ,  H01S5/00

CPC classification number: H01S5/32341 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S2304/025

Abstract: A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.

Abstract translation: 公开了一种用于制造发光器件的系统。 该系统包含生长室和至少一个被引入生长室的氮前体。 至少一种氮前体在至少一个III族原子和至少一个氮原子之间具有直接键合。 此外，氮前体用于制造构成包含铟，镓，砷和氮的发光器件的有源区的一部分的层，其中有源区产生波长在约1.2至1.6范围内的光 微米。 还公开了一种用于制造半导体结构的方法。 该方法包括提供衬底并使用至少一种具有至少一个III族原子和至少一个氮原子之间的直接键的氮前驱体在衬底上生长包含铟，镓，砷和氮的层。

公开(公告)号：US06730944B1

公开(公告)日：2004-05-04

申请号：US10354276

申请日：2003-01-30

Applicant: Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

Inventor： Ashish Tandon ,  Ying-Ian Chang ,  Scott W. Corzine ,  David P. Bour ,  Michael R. T. Tan

IPC: H01L2906

CPC classification number: B82Y20/00 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/3436 ,  H01S2302/00

Abstract: The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.

Abstract translation: 本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。 激光器结构包括InAsP的量子阱层。 量子阱层夹在第一阻挡层和第二阻挡层之间。 每个阻挡层表现出比量子阱层更高的带隙能量。 此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。 所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。