公开(公告)号：US06934312B2

公开(公告)日：2005-08-23

申请号：US10261754

申请日：2002-09-30

Applicant: Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

Inventor： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

IPC: C23C16/34 ,  H01L21/205 ,  H01S5/183 ,  H01S5/323 ,  H01S5/00

CPC classification number: H01S5/32341 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S2304/025

Abstract: A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.

Abstract translation: 公开了一种用于制造发光器件的系统。 该系统包含生长室和至少一个被引入生长室的氮前体。 至少一种氮前体在至少一个III族原子和至少一个氮原子之间具有直接键合。 此外，氮前体用于制造构成包含铟，镓，砷和氮的发光器件的有源区的一部分的层，其中有源区产生波长在约1.2至1.6范围内的光 微米。 还公开了一种用于制造半导体结构的方法。 该方法包括提供衬底并使用至少一种具有至少一个III族原子和至少一个氮原子之间的直接键的氮前驱体在衬底上生长包含铟，镓，砷和氮的层。

公开(公告)号：US06887727B2

公开(公告)日：2005-05-03

申请号：US10352491

申请日：2003-01-28

Applicant: Tetsuya Takeuchi ,  Ying-Ian Chang

Inventor： Tetsuya Takeuchi ,  Ying-Ian Chang

IPC: C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/125 ,  H01S5/323 ,  H01L21/20

CPC classification number: H01L33/32 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

Abstract: A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

Abstract translation: 公开了一种用于生长半导体材料层的方法和系统。 该方法可用于生长包含至少一种III族元素，氮和至少一种其它V族元素作为其构成元素的半导体材料层，该方法包括提供反应器并向反应器供应前体。 前体包括用于至少一种III族元素中的每一种的前体，氮的前体，除氮以外的至少一种第V族元素中的每一种的前体，以及具有与 与所述至少一种III族元素中的每一个具有氮的氮相同。 该方法可以在例如金属有机化学气相沉积（MOCVD）反应器中实现。

公开(公告)号：US08116344B2

公开(公告)日：2012-02-14

申请号：US12487619

申请日：2009-06-18

Applicant: Tetsuya Takeuchi ,  Mamoru Uchida ,  Tomoyuki Miyamoto ,  Fumio Koyama

Inventor： Tetsuya Takeuchi ,  Mamoru Uchida ,  Tomoyuki Miyamoto ,  Fumio Koyama

IPC: H01S5/183

CPC classification number: H01S5/34326 ,  B82Y20/00 ,  H01S5/021 ,  H01S5/1039 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/2201 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/3436

Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

Abstract translation: 红色表面发射激光元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层，以及在有源层和第二反射器之间的p型半导体间隔层 反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。

公开(公告)号：US07924900B2

公开(公告)日：2011-04-12

申请号：US12509632

申请日：2009-07-27

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01L21/00 ,  H01S5/00 ,  H01S3/097

CPC classification number: H01S5/18391 ,  B82Y20/00 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/2022 ,  H01S5/34326

Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.

Abstract translation: 一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由 低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以波长λ振荡，其中上反射镜由多层膜反射镜构成，基于由 层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层 在相位调整层中提供带 - 带吸收。

公开(公告)号：US20100252809A1

公开(公告)日：2010-10-07

申请号：US12820460

申请日：2010-06-22

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01L31/12 ,  H01L33/04

CPC classification number: H01L27/153 ,  B41J2/45 ,  H01L33/145 ,  H01L2924/0002 ,  Y10S257/918 ,  H01L2924/00

Abstract: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

Abstract translation: 包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。

公开(公告)号：US07807485B2

公开(公告)日：2010-10-05

申请号：US12509551

申请日：2009-07-27

Applicant: Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

Inventor： Tatsuro Uchida ,  Mitsuhiro Ikuta ,  Tetsuya Takeuchi

IPC: H01L21/00 ,  H01S5/00

CPC classification number: H01S5/423 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/18391 ,  H01S5/209 ,  H01S5/34326 ,  H01S2301/166

Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.

Abstract translation: 提供一种制造表面发射激光器的方法，该表面发射激光器包括设置在层叠半导体层上的表面浮雕结构，包括以下步骤：向第一电介质膜转移用于限定台面结构的第一图案和用于限定表面浮雕的第二图案 结构在同一过程中; 以及在所述第一电介质膜上形成第二电介质膜和在所述第一图案和所述第二图案转印到所述层叠半导体层的表面上。 因此，表面浮雕结构的中心位置可以高精度地与电流限制结构的中心位置对准。

公开(公告)号：US07768021B2

公开(公告)日：2010-08-03

申请号：US11609595

申请日：2006-12-12

Applicant: Tetsuya Takeuchi

Inventor： Tetsuya Takeuchi

IPC: H01L29/207

CPC classification number: H01L27/153 ,  B41J2/45 ,  H01L33/145 ,  H01L2924/0002 ,  Y10S257/918 ,  H01L2924/00

Abstract: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.

Abstract translation: 包括通常用于发光元件区域的有源层的发光元件阵列，彼此电隔离并设置在各个发光元件区域中的并且设置在各个发光元件区域中的载流子注入层以及电阻高于其的电阻层。 并且设置在有源层和载流子注入层之间。

公开(公告)号：US07311429B2

公开(公告)日：2007-12-25

申请号：US11016944

申请日：2004-12-21

Applicant: Tetsuya Takeuchi ,  Kunihiko Kurisu ,  Atsushi Yoshida ,  Hiroyuki Oshita

Inventor： Tetsuya Takeuchi ,  Kunihiko Kurisu ,  Atsushi Yoshida ,  Hiroyuki Oshita

IPC: B60Q1/04

CPC classification number: B60Q1/0052 ,  F21S41/337

Abstract: A vehicle lamp can include a sidelight source that is provided in a headlight reflector and which is close to the front end and close to the outer circumference. A position reflector can be provided that is almost in the form of a ring in an integral or split state at the front end, and close to the outer circumference of the headlight reflector to reflect light from the sidelight source toward the front in a certain direction.

Abstract translation: 车灯可以包括设置在大灯反射器中并且靠近前端并且靠近外圆周的侧光源。 可以提供位置反射器，它几乎是在前端处于整体或分裂状态的环的形式，并且靠近头灯反射器的外周，以将来自侧光源的光沿着一定方向向前方反射 。

公开(公告)号：US06955933B2

公开(公告)日：2005-10-18

申请号：US09912589

申请日：2001-07-24

Applicant: David P. Bour ,  Nathan F. Gardner ,  Werner K. Goetz ,  Stephen A. Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher P. Kocot ,  Mark R. Hueschen

Inventor： David P. Bour ,  Nathan F. Gardner ,  Werner K. Goetz ,  Stephen A. Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher P. Kocot ,  Mark R. Hueschen

IPC: H01L33/06 ,  H01L33/32 ,  H01L21/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

Abstract translation: 根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。 有源区包括作为量子阱层或阻挡层的第二半导体层。 第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。 发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

公开(公告)号：US06690700B2

公开(公告)日：2004-02-10

申请号：US09833243

申请日：2001-04-10

Applicant: Tetsuya Takeuchi ,  Yawara Kaneko ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

Inventor： Tetsuya Takeuchi ,  Yawara Kaneko ,  Norihide Yamada ,  Hiroshi Amano ,  Isamu Akasaki

IPC: H01S500

CPC classification number: H01S5/20 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2004 ,  H01S5/32341 ,  H01S2301/18

Abstract: A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.

Abstract translation: 一种氮化物半导体器件，包括夹在第一层和第二层之间的第一层，第二层和缓冲层。 第二层是包括AlN的单晶氮化物半导体材料的层，并且其厚度大于如果第二层直接在第一层上生长则形成裂纹的厚度。 缓冲层是包含AlN的低温沉积氮化物半导体材料的层。 将氮化物半导体器件并入半导体激光二极管使得激光二极管能够产生具有单峰的远场图案的相干光。