公开(公告)号：US20210080419A1

公开(公告)日：2021-03-18

申请号：US17032658

申请日：2020-09-25

申请人： The Government of the United States of America, as Represented by the Secretary of the Navy

发明人： Adam L. Friedman ,  F. Keith Perkins ,  James C. Culbertson ,  Aubrey T. Hanbicki ,  Paul M. Campbell

IPC分类号： G01N27/26 ,  G01N27/12 ,  G01N21/77 ,  C01B19/04 ,  C01G33/00 ,  C01G35/00 ,  C01G39/06 ,  C01G41/00 ,  C07C211/05 ,  C07C211/07 ,  G01N21/65

摘要： Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

公开(公告)号：US10801987B2

公开(公告)日：2020-10-13

申请号：US15652491

申请日：2017-07-18

申请人： The Government of the United States of America, as Represented by the Secretary of the Navy

发明人： Adam L. Friedman ,  F. Keith Perkins ,  James C. Culbertson ,  Aubrey T. Hanbicki ,  Paul M. Campbell

IPC分类号： G01N27/26 ,  C07C211/05 ,  C01G35/00 ,  C01G39/06 ,  C01G41/00 ,  C01G33/00 ,  C07C211/07 ,  C01B19/04 ,  G01N27/12 ,  G01N21/77 ,  G01N21/65 ,  G01N21/78 ,  C12N9/16 ,  G01N21/64 ,  H04B7/00

摘要： Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

公开(公告)号：US20190389727A1

公开(公告)日：2019-12-26

申请号：US16448336

申请日：2019-06-21

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： F. Keith Perkins ,  Ignacio Perez De Leon ,  Paul M. Campbell ,  Adam L. Friedman ,  Erin Cleveland

IPC分类号： C01B32/16 ,  C23C16/02 ,  C23C16/26 ,  C23C16/56

摘要： A method of forming a carbon microtube includes providing a wire substrate in a heated furnace, contacting a surface of the wire substrate in the heated furnace with a reducing gas, forming a carbon microtube on the wire substrate by chemical vapor deposition of a carbon precursor in the heated furnace, and removing the carbon microtube, on the wire substrate, from the furnace.

公开(公告)号：US10436744B2

公开(公告)日：2019-10-08

申请号：US15479014

申请日：2017-04-04

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Adam L. Friedman ,  F. Keith Perkins ,  James C. Culbertson ,  Aubrey T. Hanbicki ,  Paul M. Campbell

IPC分类号： G01N27/414 ,  H01L29/24 ,  G03F7/40 ,  H01L29/66 ,  G03F1/20 ,  G01N33/00

摘要： A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.

公开(公告)号：US20180182852A1

公开(公告)日：2018-06-28

申请号：US15883935

申请日：2018-01-30

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Adam L. Friedman ,  Olaf M. J. van 't Erve ,  Jeremy T. Robinson ,  Berend T. Jonker ,  Keith E. Whitener

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/66984 ,  H01L21/02104 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L21/042 ,  H01L21/0435 ,  H01L29/0895 ,  H01L29/1606 ,  H01L29/66015 ,  H01L29/88 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

摘要： A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material—graphene.

公开(公告)号：US20160218184A1

公开(公告)日：2016-07-28

申请号：US15091800

申请日：2016-04-06

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jeffrey W. Baldwin ,  Bernard R. Matis ,  James S. Burgess ,  Felipe Bulat-Jara ,  Adam L. Friedman ,  Brian H. Houston

IPC分类号： H01L29/16 ,  H01L21/30 ,  H01L21/02

CPC分类号： H01L29/1606 ,  H01B5/14 ,  H01B13/30 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02518 ,  H01L21/02527 ,  H01L21/02664 ,  H01L21/2236 ,  H01L21/3003

摘要： A graphene compound made from the method of preparing graphene flakes or chemical vapor deposition grown graphene films on a SiO2/Si substrate; exposing the graphene flakes or the chemical vapor deposition grown graphene film to hydrogen plasma; performing hydrogenation of the graphene; wherein the hydrogenated graphene has a majority carrier type; creating a bandgap from the hydrogenation of the graphene; applying an electric field to the hydrogenated graphene; and tuning the bandgap.

摘要翻译： 由在SiO 2 / Si衬底上制备石墨烯薄片或化学气相沉积生长的石墨烯薄膜的方法制成的石墨烯化合物; 将石墨烯薄片或化学气相沉积生长的石墨烯薄膜暴露于氢等离子体; 进行石墨烯的氢化; 其中所述氢化石墨烯具有多数载体类型; 从石墨烯的氢化产生带隙; 向氢化石墨烯施加电场; 并调整带隙。

公开(公告)号：US11841338B2

公开(公告)日：2023-12-12

申请号：US17032658

申请日：2020-09-25

申请人： The Government of the United States of America, as Represented by the Secretary of the Navy

发明人： Adam L. Friedman ,  F. Keith Perkins ,  James C. Culbertson ,  Aubrey T. Hanbicki ,  Paul M. Campbell

IPC分类号： G01N27/26 ,  G01N27/12 ,  G01N21/77 ,  G01N21/65 ,  C01B19/04 ,  C01G33/00 ,  C01G35/00 ,  C01G39/06 ,  C01G41/00 ,  C07C211/05 ,  C07C211/00 ,  C07C211/07 ,  G01N21/78 ,  C12N9/16 ,  G01N21/64 ,  H04B7/00

CPC分类号： G01N27/26 ,  C01B19/04 ,  C01G33/00 ,  C01G35/00 ,  C01G39/06 ,  C01G41/00 ,  C07C211/05 ,  C07C211/07 ,  G01N21/65 ,  G01N21/77 ,  G01N27/125 ,  C12N9/16 ,  G01N21/64 ,  G01N21/783 ,  H04B7/00

摘要： Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.

公开(公告)号：US20190333559A1

公开(公告)日：2019-10-31

申请号：US16383590

申请日：2019-04-13

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Olaf M.J. van 't Erve ,  Steven P. Bennett ,  Adam L. Friedman

IPC分类号： G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  G11C11/56

摘要： A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.

公开(公告)号：US11605410B2

公开(公告)日：2023-03-14

申请号：US17362355

申请日：2021-06-29

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Olaf M. J. van 't Erve ,  Steven P. Bennett ,  Adam L. Friedman

IPC分类号： H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  G11C11/56 ,  H01L43/08

摘要： A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.

公开(公告)号：US20180024085A1

公开(公告)日：2018-01-25

申请号：US15652491

申请日：2017-07-18

申请人： The Government of the United States of America, as Represented by the Secretary of the Navy

发明人： Adam L. Friedman ,  F. Keith Perkins ,  James C. Culbertson ,  Aubrey T. Hanbicki ,  Paul M. Campbell

IPC分类号： G01N27/26 ,  C07C211/05 ,  C01G35/00 ,  C01G39/06 ,  C01G41/00 ,  C01G33/00 ,  C07C211/07 ,  C01B19/04

CPC分类号： G01N27/26 ,  C01B19/04 ,  C01G33/00 ,  C01G35/00 ,  C01G39/06 ,  C01G41/00 ,  C07C211/05 ,  C07C211/07 ,  C12N9/16 ,  G01N21/64 ,  G01N21/65 ,  G01N21/77 ,  G01N21/783 ,  G01N27/125 ,  H04B7/00

摘要： Optical and electronic detection of chemicals, and particularly strong electron-donors, by 2H to 1T phase-based transition metal dichalcogenide (TMD) films, detection apparatus incorporating the TMD films, methods for forming the detection apparatus, and detection systems and methods based on the TMD films are provided. The detection apparatus includes a 2H phase TMD film that transitions to the 1T phase under exposure to strong electron donors. After exposure, the phase state can be determined to assess whether all or a portion of the TMD has undergone a transition from the 2H phase to the 1T phase. Following detection, TMD films in the 1T phase can be converted back to the 2H phase, resulting in a reusable chemical sensor that is selective for strong electron donors.