-
公开(公告)号：US4594229A
公开(公告)日：1986-06-10
申请号：US238234
申请日：1981-02-25
摘要： An economical method is presented for forming thin sheets of crystalline silicon suitable for use in a photovoltaic conversion cell by solidification from the liquid phase. Two spatially separated, generally coplanar filaments wettable by liquid silicon and joined together at the end by a bridge member are immersed in a silicon melt and then slowly withdrawn from the melt so that a silicon crystal is grown between the edge of the bridge and the filaments.
摘要翻译： 提出了一种经济的方法，用于通过从液相固化来形成适用于光伏转换电池的晶体硅薄片。 两个空间分离的，通常由液态硅润湿并在端部由桥接部件连接在一起的空间分离的细丝被浸入硅熔体中，然后从熔体中缓慢地取出，使得在晶体的边缘和长丝之间生长硅晶体 。
-
公开(公告)号：US06281098B1
公开(公告)日：2001-08-28
申请号：US09334166
申请日：1999-06-15
申请人： Tihu Wang , Theodore F. Ciszek
发明人： Tihu Wang , Theodore F. Ciszek
IPC分类号： H01L2120
CPC分类号： C30B29/06 , C01B33/039 , C23C16/24 , C23C16/4402 , C23C16/4418 , C23C16/4488 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/28525
摘要： A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.
摘要翻译： 在大气压的室中发生包括异质衬底的衬底上沉积多晶硅的方法，其中形成温度梯度，并且在整个过程中保持大气压力和温度梯度。 在室内形成阻止组分化学品（包括硅，碘，二碘化二硅和四碘化硅）排出的蒸气阻挡层。 沉积发生在蒸汽屏障下方。 该方法的一个实施方案还包括使用阻止氧气或其他杂质进入的覆盖气体的用途。 该过程能够重复，而不需要重置沉积区条件。
-
公开(公告)号：US4299648A
公开(公告)日：1981-11-10
申请号：US179919
申请日：1980-08-20
CPC分类号： C30B15/34 , C30B15/24 , Y10T117/1044
摘要： A method and apparatus for drawing a monocrystalline ribbon or web from a melt comprising utilizing a shaping die including at least two elements spaced one from the other each having a portion thereof located below the level of the melt and another portion located above the level of the melt a distance sufficient to form a raised meniscus of melt about the corresponding element.
摘要翻译： 一种用于从熔体中拉制单晶带或网的方法和装置，包括利用包括至少两个间隔开的元件的成形模具，每个元件具有位于熔体高度以下的部分， 熔化足以在相应元件周围形成升高的熔融液面的距离。
-
公开(公告)号：US5401331A
公开(公告)日：1995-03-28
申请号：US116849
申请日：1993-09-07
申请人： Theodore F. Ciszek
发明人： Theodore F. Ciszek
IPC分类号： H01L31/0288 , H01L31/068 , H01L31/18 , H01L31/04 , H01L31/028
CPC分类号： H01L31/1804 , H01L31/0288 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.
摘要翻译： 用于将太阳能转换成电信号的光伏器件包括衬底，在所述衬底上生长的光电导半导体材料层，其中所述衬底包括硼和硅的合金，所述硼的存在范围为0.1至1.3原子％ ，所述合金的晶格常数基本上与光电导半导体材料的晶格常数匹配，电阻率小于1×10-3欧姆 - 厘米。
-
公开(公告)号：US5047112A
公开(公告)日：1991-09-10
申请号：US566930
申请日：1990-08-14
申请人： Theodore F. Ciszek
发明人： Theodore F. Ciszek
CPC分类号： C30B29/40 , C30B15/12 , Y10S117/90
摘要： A method for producing homogeneous, single-crystal III-V ternary alloys of high crystal perfection using a floating crucible system in which the outer crucible holds a ternary alloy of the composition desired to be produced in the crystal and an inner floating crucible having a narrow, melt-passing channel in its bottom wall holds a small quantity of melt of a pseudo-binary liquidus composition that would freeze into the desired crystal composition. The alloy of the floating crucilbe is maintained at a predetermined lower temperature than the alloy of the outer crucible, and a single crystal of the desired homogeneous alloy is pulled out of the floating crucible melt, as melt from the outer crucible flows into a bottom channel of the floating crucible at a rate that corresponds to the rate of growth of the crystal.
摘要翻译： 一种使用浮动坩埚系统制造具有高结晶完全性的均匀的单晶III-V三元合金的方法，其中外坩埚保持期望在晶体中生产的组成的三元合金和具有狭窄的内部浮动坩埚 ，其底壁中的熔融通道保持少量熔融的拟二元液相组合物，其将冷冻成所需的晶体组成。 浮动坩埚的合金保持在比外坩埚的合金低的预定温度下，并且将期望的均质合金的单晶从浮坩坩埚熔化出来，当外坩埚的熔体流入底槽 的浮动坩埚以与晶体生长速率相对应的速率。
-
6.发明授权Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width 失效生长带状晶体的方法特别适用于促进色带宽度的自动控制
公开(公告)号：US4217165A
公开(公告)日：1980-08-12
申请号：US901055
申请日：1978-04-28
申请人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Theodore F. Ciszek
发明人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Theodore F. Ciszek
CPC分类号： C30B15/26 , C30B15/00 , C30B29/60 , Y10S117/90
摘要： A method of growing a ribbon crystal wherein a meniscus of molten semiconductor material attached to vertical movable seed is lifted at a rate substantially equal to the rate at which the meniscus freezes, characterized by the steps of continuously sensing the brightness of the growth region of the ribbon in selected areas across the width thereof for detecting changes in the intensity of the brightness of said selected areas, and modifying the temperature of the meniscus and pulling speed in response to changes detected in the intensity for controlling the geometry of the ribbon.
摘要翻译： 一种生长带状晶体的方法，其中附着到垂直可移动种子的熔融半导体材料的弯液面以基本上等于弯液面冻结速率的速率提升，其特征在于以下步骤：连续感测生长区域的亮度 色带在其宽度上的选定区域中，用于检测所述选择区域的亮度强度的变化，以及响应于用于控制色带几何形状的强度检测到的变化来修改弯月面的温度和拉拔速度。
-
公开(公告)号：US06712908B2
公开(公告)日：2004-03-30
申请号：US10243503
申请日：2002-09-13
申请人： Tihu Wang , Theodore F. Ciszek
发明人： Tihu Wang , Theodore F. Ciszek
IPC分类号： C23C1600
CPC分类号： C30B29/06 , C01B33/039 , C23C16/24 , C23C16/4402 , C23C16/4418 , C23C16/4488 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/28525
摘要： Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.
摘要翻译： 在大气压下从高纯度冶金级硅源材料生产纯化体硅的方法和装置。 方法包括：（1）首先使碘和冶金级硅反应，在冷壁反应器室中产生四碘化硅和杂质碘化物副产物; （2）从杂质碘化物副产物中分离出四碘化硅，并通过蒸馏在蒸馏室中进行纯化; 和（3）将纯化的四碘化硅转移回冷壁反应器室，使其与另外的碘和冶金级硅反应以产生二碘化硅，并将硅二碘化物沉积到冷壁反应器室内的基底上。 两个室处于大气压力下，系统是开放的，以允许引入额外的源材料并去除和替换成品的基材。
-
8.发明授权
公开(公告)号：US5544616A
公开(公告)日：1996-08-13
申请号：US249957
申请日：1994-05-27
申请人： Theodore F. Ciszek , Tihu Wang
发明人： Theodore F. Ciszek , Tihu Wang
IPC分类号： C30B19/02 , H01L21/208
CPC分类号： H01L21/02532 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02625 , H01L21/02628
摘要： A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
摘要翻译： 一种用于形成具有小于3×10 16 Cu原子/ cc杂质的器件质量硅的薄晶层的液相外延方法，包括：在Cu / Al溶剂中在约20至约40at下制备Si的饱和液体溶液。 ％Si，在约850℃至约1100℃的温度范围内; 将基板浸入或部分浸渍在饱和液体溶液中; 通过降低饱和溶液的温度使溶液过饱和; 将基板保持在饱和溶液中足以使Si沉淀出溶液并在基板上形成Si的结晶层的时间; 并从溶液中取出底物。
-
9.发明授权Method and apparatus for forming high-critical-temperature superconducting layers on flat and/or elongated substrates 失效在平坦和/或延长的基底上形成高临界温度超导层的方法和装置
公开(公告)号：US5304534A
公开(公告)日：1994-04-19
申请号：US432938
申请日：1989-11-07
申请人： Theodore F. Ciszek
发明人： Theodore F. Ciszek
CPC分类号： C30B29/225 , C30B15/00 , H01L39/248 , Y10S505/704 , Y10S505/729 , Y10S505/73 , Y10S505/739 , Y10S505/74 , Y10S505/741 , Y10S505/742
摘要： An elongated, flexible superconductive wire or strip is fabricated by pulling it through and out of a melt of metal oxide material at a rate conducive to forming a crystalline coating of superconductive metal oxide material on an elongated, flexible substrate wire or strip. A coating of crystalline superconductive material, such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8, is annealed to effect conductive contact between adjacent crystalline structures in the coating material, which is then cooled to room temperature. The container for the melt can accommodate continuous passage of the substrate through the melt. Also, a second pass-through container can be used to simultaneously anneal and overcoat the superconductive coating with a hot metallic material, such as silver or silver alloy. A hollow, elongated tube casting method of forming an elongated, flexible superconductive wire includes drawing the melt by differential pressure into a heated tubular substrate.
摘要翻译： 通过将金属氧化物材料的熔体以有助于在细长的柔性衬底导线或带上形成超导金属氧化物材料的结晶涂层的速率拉出并流出金属氧化物材料，制造细长的柔性超导线或带。 结晶超导材料如Bi2Sr2CaCu2O8的涂层退火，以在涂层材料中相邻的晶体结构之间进行导电接触，然后将其冷却至室温。 用于熔体的容器可以容纳衬底连续通过熔体。 而且，可以使用第二直通容器来同时用诸如银或银合金的热金属材料对超导涂层进行退火和覆盖。 形成细长的柔性超导线的中空的细长管铸造方法包括通过差压将熔体拉伸成加热的管状基材。
-
10.发明授权Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt 失效碳化硅晶体在种子上的生长，同时从熔体中提取硅晶体
公开(公告)号：US4152194A
公开(公告)日：1979-05-01
申请号：US820499
申请日：1977-07-29
申请人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Theodore F. Ciszek , Guenther H. Schwuttke
发明人： Robert A. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Frosch , Theodore F. Ciszek , Guenther H. Schwuttke
CPC分类号： C30B29/06 , C30B15/00 , C30B19/04 , C30B29/36 , Y10S117/90
摘要： A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.
摘要翻译： 通过将固体碳片放置在具有温度差降低的熔融硅体内而形成硅的饱和溶液和具有小于1的偏析系数的元素如碳。 将碳化硅晶种设置在熔融硅表面下方的保持器上。 当从熔体中缓慢地拉出硅或者硅带时，在晶种附近形成碳的过饱和溶液。 过量的碳以碳化硅的形式从溶液中排出，其结晶在保持在熔体的冷区中的晶种上。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.017 秒)